Abstract:The relationship of donor concentration to PTCR effect in BaTiO3 ceramics is not clear；it is so complicated that such as impurities，even sintering aids can make it changed．The intrinsic nature of PTCR effect can be revealed in a certain extent by this relationship，but many authors ignored it．Heywang previously presumed that the PTCR effect can be greatly enhanced by the existence of high concentration of acceptor levels at grain boundary layers，which can be formed by the piling up of excess donors at grain boundary or by the addition of some acceptors．In this paper，it results in a contradiction to Heywang’s presumption by studying the influence of Sm2O3 concentrations on PTCR effect．With the rising of Sm2O3 concentration，the PTCR effect of the BaTiO3 samples was decreased．Thus，excess donor can not enhance the PTCR effect；it can only increase the room temperature resistance．Here，another model in which the neutral barium vacancy would be responsible for the PTCR effect is more possible than Heywang’s model，which was accepted widely．

Abnormal behavior of B2O3 vapor dopants in BaTiO3 based PTCR ceramics

Enhancement of Positive Temperature Coefficient Resistance Effect of Batio3-Based Semiconducting Ceramics Caused by B2o3 Vapor Dopants

Low temperature sintering behavior of B2O3 vapor in BaTiO3-based PTCR thermistors

Improvement in PTCR effect of BaTiO3-based semiconducting ceramics caused by CdO dopant

Doping behavior of CdO in BaTiO3-based PTCR ceramics

Boron Interstitial In Batio3 And Its Influence On Ptcr Effect

Improvement of the PTCR Effect in Ba1‐xSrxTiO3 Semiconducting Ceramics by Doping of Bi2O3 Vapor During Sintering

Medium-low temperature sintered Y-BaTiO3 ceramics modified by B2O3 vapor and its PTCR effect

PTCR effect in semiconducting Ba1-xSrxTiO3 ceramics by Bi2O3 vapor doped during sintering

Vapor doping method, a new effective method used in BaTiO3 based PTCR ceramics

Enhancement of PTCR Effect of Semiconducting Ba1−xSrxTiO3 by Sb2O3 Vapor

Positive Temperature Coefficient Resistance Effect in Ba1-xSrxTiO3 Ceramics Modified with Bi2O3 and PbO by a Vapor-Doping Method

The PTCR Effect in BaTiO3 Ceramics Modified by Donor Dopant

Influence of manganese on PTCR effect in BaTiO3-based ceramics doped with Bi2O3 vapor

The Relationship between PTCR Effect and Donor Content in Yb-Doped BaTiO<sub>3</sub> Ceramics

The Oxidizing of Grain Boundary Defects in Batio3-Based Ptcr Ceramics

Positive Temperature Coefficient Resistivity Effect in Sm2O3-doped BaTiO3 Semiconducting Ceramics

Difference of Bi2O3 doping effect between vapor process and solid process on Ba1-xSrxTiO3 esmiconducting ceramics

Dielectric Properties of Barium Titanate Ceramics Doped by B2O3 Vapor

The Behavior of Grain Boundary Defects and Impurities Related to PTCR Effects in Semiconducting BaTiO3-b Ased Ceramics

Influence of Bi and Nb Codoping on the Behaviors of BaTiO3-Based PTC Ceramics