Positive Temperature Coefficient Resistivity Effect in Sm2O3-doped BaTiO3 Semiconducting Ceramics

Jian-quan QI,Long-tu LI,Qing ZHU,Zhi-lun GUI

DOI: https://doi.org/10.3969/j.issn.1004-2474.2001.03.016

2001-01-01

Abstract:The relationship of donor concentration to PTCR effect in BaTiO3 ceramics is not clear；it is so complicated that such as impurities，even sintering aids can make it changed．The intrinsic nature of PTCR effect can be revealed in a certain extent by this relationship，but many authors ignored it．Heywang previously presumed that the PTCR effect can be greatly enhanced by the existence of high concentration of acceptor levels at grain boundary layers，which can be formed by the piling up of excess donors at grain boundary or by the addition of some acceptors．In this paper，it results in a contradiction to Heywang’s presumption by studying the influence of Sm2O3 concentrations on PTCR effect．With the rising of Sm2O3 concentration，the PTCR effect of the BaTiO3 samples was decreased．Thus，excess donor can not enhance the PTCR effect；it can only increase the room temperature resistance．Here，another model in which the neutral barium vacancy would be responsible for the PTCR effect is more possible than Heywang’s model，which was accepted widely．