Abstract:Lead-free positive temperature coefficient of resistivity (PTCR) materials with higher Curie point are important for their high temperature applications. In the present study, 0.99BaTiO3 −0.01Na0.5Bi0.5TiO3-xLa2O3 (99BT-1NBT-100xLa, x = 0.001, 0.002, 0.003, 0.004) ceramics were prepared by a conventional solid-state reaction method. The phase structure, microstructure, and PTCR effect of these ceramics were investigated. X-ray diffraction analysis indicates that all the samples are of a single tetragonal perovskite structure. The SEM images of all samples show the grain shape is irregular. And the grain size is around 3–30 µm. The PTCR effects occur at a temperature of about 150 °C. The room-temperature resistivity (ρ25) drops with the increase of donor concentration and the decrease of sintering time. The resistivity ratio (ρmax/ρmin) first increased and then decreased with increasing sintering time and donor concentration. The optimum composition for a large PTCR effect is 99BT-1NBT-0.3La, having a high jump of resistivity of 2.63 orders of magnitude sintered at 1400 °C for 30 min in air. A possible relation between the PTCR effect with the dopant behavior are discussed. This work may help on the study of lead-free PTCR ceramics from the view of control of doping elements and sintering procedure.

Doping behavior of CdO in BaTiO3-based PTCR ceramics

Improvement in PTCR effect of BaTiO3-based semiconducting ceramics caused by CdO dopant

The PTCR Effect in BaTiO3 Ceramics Modified by Donor Dopant

Abnormal behavior of B2O3 vapor dopants in BaTiO3 based PTCR ceramics

The Relationship between PTCR Effect and Donor Content in Yb-Doped BaTiO<sub>3</sub> Ceramics

PTCR effect in semiconducting Ba1-xSrxTiO3 ceramics by Bi2O3 vapor doped during sintering

Positive Temperature Coefficient Resistance Effect in Ba1-xSrxTiO3 Ceramics Modified with Bi2O3 and PbO by a Vapor-Doping Method

Positive Temperature Coefficient Resistivity Effect in Sm2O3-doped BaTiO3 Semiconducting Ceramics

Influence of manganese on PTCR effect in BaTiO3-based ceramics doped with Bi2O3 vapor

Influence of Bi and Nb Codoping on the Behaviors of BaTiO3-Based PTC Ceramics

Improvement of the PTCR Effect in Ba1‐xSrxTiO3 Semiconducting Ceramics by Doping of Bi2O3 Vapor During Sintering

Boron Interstitial In Batio3 And Its Influence On Ptcr Effect

Enhancement of Positive Temperature Coefficient Resistance Effect of Batio3-Based Semiconducting Ceramics Caused by B2o3 Vapor Dopants

Vapor doping method, a new effective method used in BaTiO3 based PTCR ceramics

Low temperature sintering behavior of B2O3 vapor in BaTiO3-based PTCR thermistors

Difference of Bi2O3 doping effect between vapor process and solid process on Ba1-xSrxTiO3 esmiconducting ceramics

The Behavior of Grain Boundary Defects and Impurities Related to PTCR Effects in Semiconducting BaTiO3-b Ased Ceramics

Enhancement of PTCR Effect of Semiconducting Ba1−xSrxTiO3 by Sb2O3 Vapor

Influence of Sintering Time and Donor Concentration on the PTCR Effect of La-doped BaTiO3-Na0.5Bi0.5TiO3 Ceramics

The Oxidizing of Grain Boundary Defects in Batio3-Based Ptcr Ceramics

Medium-low temperature sintered Y-BaTiO3 ceramics modified by B2O3 vapor and its PTCR effect