Abstract:High Curie temperature (TC) xBi(Ni1/2Ti1/2)O3-(1-x)Pb(Zr1/2Ti1/2)O3 (xBNT-(1-x)PZT, BNT-PZT) piezoelectric ceramics were prepared by the conventional ceramic processing. The composition-induced morphotropic phase boundary (MPB) and its influences on structure and electrical performance were investigated. The synthesized BNT-PZT ceramics exhibit rather pure perovskite structure, and densified microstructure morphology with uniform elementals distribution in both grains and grain boundaries. With increasing the content of Bi(Ni1/2Ti1/2)O3 (BNT), crystal structure of the BNT-PZT ceramics transform from tetragonal phase to rhombohedral phase, and dielectric response peaks change from narrow shape to very broad shape but all presenting dielectric frequency dispersion. The diffused and relaxation dielectric behavior can be fitted well by the quadratic law, and the Vogel-Fulcher law fitting provides additional information on the relaxation characteristic. The MPB effects are confirmed further by ferroelectric and piezoelectric properties measurements. High-TC combined with excellent piezoelectric performance can be realized in the BNT-PZT system, which presents promising applications in geothermal exploration, aerospace and related elevated temperatures fields.

The Oxidizing of Grain Boundary Defects in Batio3-Based Ptcr Ceramics

The Behavior of Grain Boundary Defects and Impurities Related to PTCR Effects in Semiconducting BaTiO3-b Ased Ceramics

Positive Temperature Coefficient Resistance Effect in Ba1-xSrxTiO3 Ceramics Modified with Bi2O3 and PbO by a Vapor-Doping Method

PTCR effect in semiconducting Ba1-xSrxTiO3 ceramics by Bi2O3 vapor doped during sintering

Abnormal behavior of B2O3 vapor dopants in BaTiO3 based PTCR ceramics

Improvement of the PTCR Effect in Ba1‐xSrxTiO3 Semiconducting Ceramics by Doping of Bi2O3 Vapor During Sintering

Boron Interstitial In Batio3 And Its Influence On Ptcr Effect

The Preparation of Fine-Grained Positive Temperature Coefficient Resistance with Superior Electrical Properties

Influence of grain boundaries on the properties of Sr0.4Pb0.6TiO3 thermistors

Influence of manganese on PTCR effect in BaTiO3-based ceramics doped with Bi2O3 vapor

Enhancement of Positive Temperature Coefficient Resistance Effect of Batio3-Based Semiconducting Ceramics Caused by B2o3 Vapor Dopants

Vapor doping method, a new effective method used in BaTiO3 based PTCR ceramics

Low temperature sintering behavior of B2O3 vapor in BaTiO3-based PTCR thermistors

Improvement in PTCR effect of BaTiO3-based semiconducting ceramics caused by CdO dopant

Medium-low temperature sintered Y-BaTiO3 ceramics modified by B2O3 vapor and its PTCR effect

Positive Temperature Coefficient Resistivity Effect in Sm2O3-doped BaTiO3 Semiconducting Ceramics

Doping behavior of CdO in BaTiO3-based PTCR ceramics

The PTCR Effect in BaTiO3 Ceramics Modified by Donor Dopant

Enhancement of PTCR Effect of Semiconducting Ba1−xSrxTiO3 by Sb2O3 Vapor

Facile Preparation and Performance of Novel High-Tc Xbi(ni1/2ti1/2)o3-(1-x)pb(zr1/2ti1/2)o3 Piezoceramics

Influence of Bao-Cao-Sio2 on Dielectric Properties and Reliability of Batio3-Based Ceramics