Abstract:Lead-free positive temperature coefficient of resistivity (PTCR) materials with higher Curie point are important for their high temperature applications. In the present study, 0.99BaTiO3 −0.01Na0.5Bi0.5TiO3-xLa2O3 (99BT-1NBT-100xLa, x = 0.001, 0.002, 0.003, 0.004) ceramics were prepared by a conventional solid-state reaction method. The phase structure, microstructure, and PTCR effect of these ceramics were investigated. X-ray diffraction analysis indicates that all the samples are of a single tetragonal perovskite structure. The SEM images of all samples show the grain shape is irregular. And the grain size is around 3–30 µm. The PTCR effects occur at a temperature of about 150 °C. The room-temperature resistivity (ρ25) drops with the increase of donor concentration and the decrease of sintering time. The resistivity ratio (ρmax/ρmin) first increased and then decreased with increasing sintering time and donor concentration. The optimum composition for a large PTCR effect is 99BT-1NBT-0.3La, having a high jump of resistivity of 2.63 orders of magnitude sintered at 1400 °C for 30 min in air. A possible relation between the PTCR effect with the dopant behavior are discussed. This work may help on the study of lead-free PTCR ceramics from the view of control of doping elements and sintering procedure.

Enhancement of PTCR Effect of Semiconducting Ba1−xSrxTiO3 by Sb2O3 Vapor

Improvement of the PTCR Effect in Ba1‐xSrxTiO3 Semiconducting Ceramics by Doping of Bi2O3 Vapor During Sintering

The Characteristics Of Semiconducting Ba1-Xsrxtio3 Doped By Sb2o3 And Pbo Vapor During Sintering

Vapor doping method, a new effective method used in BaTiO3 based PTCR ceramics

PTCR effect in semiconducting Ba1-xSrxTiO3 ceramics by Bi2O3 vapor doped during sintering

Difference of Bi2O3 doping effect between vapor process and solid process on Ba1-xSrxTiO3 esmiconducting ceramics

Low temperature sintering behavior of B2O3 vapor in BaTiO3-based PTCR thermistors

Positive Temperature Coefficient Resistance Effect in Ba1-xSrxTiO3 Ceramics Modified with Bi2O3 and PbO by a Vapor-Doping Method

Improvement in PTCR effect of BaTiO3-based semiconducting ceramics caused by CdO dopant

Abnormal behavior of B2O3 vapor dopants in BaTiO3 based PTCR ceramics

Enhancement of Positive Temperature Coefficient Resistance Effect of Batio3-Based Semiconducting Ceramics Caused by B2o3 Vapor Dopants

Medium-low temperature sintered Y-BaTiO3 ceramics modified by B2O3 vapor and its PTCR effect

Boron Interstitial In Batio3 And Its Influence On Ptcr Effect

Effect of SrLi1/4Nb3/4O3 additive on the properties of PbxSr1-xTiO3 ceramics

Study on semiconductive characteristics of PTCR-type (Sr, Pb) TiO3 ceramics

Influence of manganese on PTCR effect in BaTiO3-based ceramics doped with Bi2O3 vapor

Doping behavior of CdO in BaTiO3-based PTCR ceramics

PTCR-type semiconducting strontium-lead titanate ceramics prepared by chemical process

Influence of Sintering Time and Donor Concentration on the PTCR Effect of La-doped BaTiO3-Na0.5Bi0.5TiO3 Ceramics

Effect of SrLi<sub>1/4</sub>Nb<sub>3/4</sub>O<sub>3</sub> Additive on the Properties of Pb<sub>x</sub>Sr<sub>1-x</sub>TiO<sub>3</sub> Ceramics

The PTCR effect of Ag+-modified strontium–lead titanate semiconducting ceramics doped with excess PbO