Progress in Research on Thermoelectric Materials β-FeSi2

李伟文,赵新兵,周邦昌

DOI: https://doi.org/10.3321/j.issn:1005-023X.2002.05.005

2002-01-01

Abstract:In this paper,the electrical and crystal properties of β-FeSi2 are presented.Ways to improve the thermoelectric properties by doping dopants and modifying microstructure are introduced.Some problems with β-FeSi2 are discussed.

What problem does this paper attempt to address?

Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

Jun Tang,Rui Xu,Jian Zhang,Di Li,Weiping Zhou,Xiaotong Li,Zhihe Wang,Feng Xu,Guodong Tang,Guang Chen

DOI: https://doi.org/10.1021/acsami.9b00958

IF: 9.5

2019-01-01

ACS Applied Materials & Interfaces

Abstract:The Seebeck coefficient and carrier mobility in reported doped BiCuSeO system are too small, which limits the improvement of thermoelectric performance. Here, we proposed a novel strategy for optimizing thermoelectric performance by increasing Seebeck coefficient and boosting carrier mobility. We demonstrate that light element Li doping boosts carrier mobility (7.39 cm2 V-1 s-1) due to largely reduced carrier scattering, which results in about 2-fold increase in carrier mobility as compared with reported Bi0.875Ba0.125CuSeO through modulation doping or microstructure texturing. Moreover, the Seebeck coefficient remarkably increases by contribution of spin entropy induced by magnetic ions Mn incorporation. The enhancement of Seebeck coefficient coupled with enhanced electrical conductivity result in high power factor. Furthermore, nanoprecipitates and dual-atom point defect leads to a significant reduction of lattice thermal conductivity. Therefore, a high ZT value of 0.9 was achieved at 873 K through optimizing power factor while maintaining low thermal conductivity. Our findings provide a new perspective for designing prospective thermoelectric materials.
TRANSPORT PROPERTIES OF P-TYPE FeSi2 BASED ALLOY DOPED WITH SAMARIUM AND CHROMIUM

李伟文,赵新兵,邬震泰,周邦昌

DOI: https://doi.org/10.3969/j.issn.2095-1744.2002.02.002

2002-01-01

Abstract:The FeSi 2 based thermoelectric materials doped with Cr and Sm is prepared by levitation melting and the electrical properties are investigated. The experimental results show that the transport properties of  Fe 1 x y Sm x Cr y Si 2 are affected by the total contents of Sm and Cr, and the electrical resistivity reduces with doped Sm, and Seebeck coefficient is improved by doped Cr. The optimal content of Cr and Sm for high power factor is 3.33% or so and less than 3.33% respectively. The FeSi 2 based thermoelectric materials with excellent properties can be made by doping properly with Cr and Sm.
Effects of Co on Transport Properties of Sm-doped FeSi2 Based Thermoelectrical Material

李伟文,赵新兵,邬震泰,周邦昌

DOI: https://doi.org/10.3321/j.issn:1004-0609.2002.z1.022

2002-01-01

Abstract:The n-type Fe 1-x-y Sm xCo ySi 2 thermoelectric materials were prepared by levitation melting. The experimental results show that the electrical properties of Fe 1- x-y Sm x Co y Si 2 are determined by the total content of Sm and Co. It is concluded that Co can improve the transport properties of Sm doped FeSi 2 based thermoelectrical materials by increasing the Seebeck coefficient and that Sm has more effect on the electrical resistivity decreasing. The results indicate that the best Co doped content in this thermoelectrical materials is 2.23% to have high power factor.
Electrical Properties of P-type FeSi_2 Based Thermoelectric Materials Doped with Sm and Mn

Wei Li

2003-01-01

Abstract: The Ptype Fe1-x-ySmxMnySi2 thermoelectric materials were prepared by levitation melting. The experimental results show that, the electrical properities of the Ptype Fe1-x-ySmxMnySi2 alloys are determined by the sum of samarium and manganese contents; the samarium has good effect on the electrical resistivity decreasing, while the manganese can improve Seebeck coefficient for Ptype Fe1-x-ySmxMnySi2. It is necessary to attain a higher power factor that the manganese content in mole fraction should be 1.7% or so and the sum dopant content is less than 5%. 
Preparation and Thermoelectric Properties of Melt-Spun Fe2si5 Based Alloys

TJ Zhu,XB Zhao,L Lu

DOI: https://doi.org/10.4028/www.scientific.net/msf.437-438.471

2003-01-01

Materials Science Forum

Abstract:Mn and Co doped Fe2Si5 based thermoelectric alloys were prepared by melt-spinning technique. XRD analysis showed that only alpha phase existed in the as-solidified Fe2Si5 based alloys, and semiconducting beta-FeSi2 thermoelectric phase and silicon were formed by the eutectoid decomposition of alpha phase during annealing other than the peritectoid reaction. Thermoelectric properties measurement suggested that a number of grain boundaries, which were created by rapid solidification process, enhanced carrier scattering and hence increased the Seebeck coefficient and electrical resistivity of Fe2Si5 alloys. Co doped samples had the higher power factors than those with the same amount of Mn dopants because the higher carrier concentrations could be obtained.
Preparation and Thermoelectric Properties of Melt-Spun Fe 2Si5 Based Alloys

Tiejun Zhu,Xinbing Zhao,Li Lü

2003-01-01

Materials Science Forum

Abstract:Mn and Co doped Fe2Si5 based thermoelectric alloys were prepared by melt-spinning technique. XRD analysis showed that only α phase existed in the as-solidified Fe2Si5 based alloys, and semiconducting β-FeSi2 thermoelectric phase and silicon were formed by the eutectoid decomposition of a phase during annealing other than the peritectoid reaction. Thermoelectric properties measurement suggested that a number of grain boundaries, which were created by rapid solidification process, enhanced carrier scattering and hence increased the Seebeck coefficient and electrical resistivity of Fe2Si5 alloys. Co doped samples had the higher power factors than those with the same amount of Mn dopants because the higher carrier concentrations could be obtained.
Optical Property and Pseudogap Study of FeSe Thin Films on Different Substrates

Yueming Wang,Jie Lian,Mingyang Wei,Yujun Shi,Kui Jin,Chenlin Wang,Yu Zhang,Zhen Xu,Xiang'an Zhou,Yongfu Li

DOI: https://doi.org/10.1016/j.optmat.2022.112727

IF: 3.754

2022-01-01

Optical Materials

Abstract:Among Fe-based superconductors, beta-FeSe has received a lot of attention from researchers because it has unique and complex physical properties under the simplest crystal structure. In this paper, FeSe films were prepared on CaF2, LiF, and SrTiO3 substrates by pulsed laser deposition (PLD) technique with the same growth parameters. The superconducting transition temperatures of the samples were tested at 11.44 K, 10.91 K, and 5.4 K, respectively, by applying electrodes on the surface of the films. We used X-ray diffraction (XRD) and atomic force microscopy (AFM) to obtain the crystal structure and roughness of the samples, respectively. Two phonons (A(1g), B-1g) of different samples were found in the Raman spectra, indicating that different strain effects were introduced by the substrates. In order to accurately reflect the properties of FeSe films, a dispersion model with Lorentz + Drude oscillations was established. The physical properties such as complex refractive index and scattering rate were analyzed by spectroscopic ellipsometry (SE) inversion. Meanwhile, we adopted the standard critical point (SCP) model to fit the second derivatives of the imaginary part of the dielectric function and calculate the transition energy. In combination with the first-principles calculation based on density functional theory (DFT), the physical origin of the transition peaks was obtained. On this basis, we propose a new method to acquire the FeSe pseudogap by making the difference between the two transition energies observed by SE. The experimental result indicates that pseudogap of FeSe film is negatively correlated with the superconducting transition temperature. This work can offer a new perspective for the prediction of the superconductivity of FeSe and a reference for the application of FeSe on different substrates.
Preparation and performance of P-type FeSi2/Bi2Te3 segmented thermoelectric material

崔教林,赵新兵,朱铁军,胡淑红

DOI: https://doi.org/10.3321/j.issn:1004-0609.2001.06.028

2001-01-01

Abstract:The segmented thermoelectric material of P-type β-FeSi2/Bi2Te3 was prepared by means of dip coating procedure and using pure tin as the bridge material. It was found that the apparent Seebeck coefficients of the segmented materials are invariable with the applied temperature difference, and reaches an approximation of 220 to 250 μV/K, which is obviously higher than those of the monolithic ones (β-FeSi2 and Bi2Te3) in the same temperature range. The measurements show that the power outputs of the segmented materials are about 1.5 to 2 times higher than that of the monolithic ones, and remain stationary even when the materials have been annealed at 190 °C 200 h. The microstructure of interfaces shows no visible diffusion of tin in the semiconductor matrixes.
Enhanced thermoelectric properties of FeTe 2 by Sb doping prepared by solid-state reaction

Bing-Ke Qin,Lang Zhang,Yong-Hua Ji,Zhi-Ling Bai,Dan Zhao,Cheng Sun

DOI: https://doi.org/10.1016/j.mssp.2024.108212

IF: 4.1

2024-02-19

Materials Science in Semiconductor Processing

Abstract:The marcasite-type compound FeTe 2 , with a semi-metallic, highly symmetric, and narrow band gap crystal structure, is often used as a second phase doped in other thermoelectric materials to optimize thermoelectric transmission performance. In this study, polycrystalline bulk samples Sb x FeTe 2 (x = 0.05, 0.1, 0.3, 0.5, 0.7, 0.9) are prepared by high-temperature solid-state reaction method. Due to the excessive doping of antimony, the sample introduces a second phase of Sb 2 Te 3 , while forming FeTe 2 and Sb 2 Te 3 at the same time. This multiphase composite structure significantly reduces the electrical resistivity, while maintaining a high Seebeck coefficient for the sample. When the synthesis temperature is 873 K and the Sb content is 0.9, a minimum electrical resistivity 0.86 mΩ cm is obtained. When the sample synthesis temperature is 823 K and the Sb content is 0.5, the maximum Seebeck coefficient 85.39 μV/K was obtained. Additionally, the sample Sb 0.7 FeTe 2 exhibited a peak ZT value of 0.25 at 473 K.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Preparation, Thermoelectric Properties and Interface Analysis of N-Type Graded Material Fesi2/Bi2te3

JL Cui,XB Zhao,WM Zhao,YP Lu

DOI: https://doi.org/10.1016/s0921-5107(02)00092-2

2002-01-01

Abstract:Graded n-type β-FeSi2/Bi2Te3 thermoelectric materials have been prepared by dip coating procedure using Sn95Ag5 as bridge material. It was found that an apparent Seebeck coefficient is in between those of β-FeSi2 and Bi2Te3 below 150°C and higher than both of them between 150 and 300°C. A measurement shown that the maximum power output of the functionally graded material (FGM) is approximately 2.5–3 times that of monolithic material β-FeSi2 at the same temperature difference, which suggests that not only do the graded material benefit the superior performance of Bi2Te3 from low temperature side, but also make fully use of the properties of β-FeSi2 at high one. Besides, the FGM revealed rather optimistic thermal stability with almost no power output loss even after annealing at 192°C for 200 h, if a nickel layer was sandwiched between Sn95Ag5 and Bi2Te3 layers. An obvious diffusion of nickel element towards both Sn95Ag5 and Bi2Te3 sides was observed by EMPA, with the former being most likely occurred during long time annealing, and latter being irrelevant to annealing procedure applied.
Preparation and performance of n-type FeSi2/Bi2Te3 segmented thermoelectric material

Jiaolin Cui,Xinbing Zhao,Tiejun Zhu,ShuHong Hu

2001-01-01

Abstract:The segmented thermoelectric material of n-type β-FeSi2/Bi2Te3 has been prepared by means of dip coating procedure and using pure tin as the bridge material. It was found that the apparent Seebeck coefficients of the segmented materials were in direct proportional to the average temperature applied between hot and cold side, which was obviously higher than those of the monolithic ones (β-FeSi2 and Bi2Te3) in the same temperature range. The measurements showed that the maximum power outputs of the segmented materials were about 2 to 2.5 times of the monolithic ones, and remained unchanged when the materials have been annealed at 190°C for 200 h. The microstructure of the interfaces shows no visible diffusion of tin in the semiconductor matrixes.
Advances in N-Type Bi2O2Se Thermoelectric Materials: Progress and Perspective

Zhifang Zhou,Wenyu Zhang,Yunpeng Zheng,Yueyang Yang,Bin Wei,Chang Liu,Jin-Le Lan,Ce-Wen Nan,Yuan-Hua Lin

DOI: https://doi.org/10.1016/j.mtphys.2023.101292

IF: 11.021

2023-01-01

Materials Today Physics

Abstract:Thermoelectric technology has been an alternative for waste heat recovery due to its ability to realize direct conversion between heat energy and electricity. As a promising n-type thermoelectric material, layer-structured Bi2O2Se has been widely investigated in the past decades. Bi2O2Se has excellent merits including extremely high carrier mobility, large Seebeck coefficient, low lattice thermal conductivity, low cost, as well as good thermal and chemical stability. Up to now, reviews especially regarding Bi2O2Se-based thermoelectric material are rare. Hence, in this review, the pristine features of Bi2O2Se as a thermoelectric material were systematically summarized from crystal structure and microstructure, electronic band structure, as well as phonon spectra. Then, the recent advances in optimization strategies for Bi2O2Se were updated and discussed, which were categorized into effective doping, texturing by shear exfoliation, and compositing with other materials. In the end, the current challenges and possible perspectives were highlighted toward further developments of Bi2O2Se.
Preparation and interface analyses of a P-type segmented FeSi2/Bi2Te3 material

Jiaolin Cui,Xinbing Zhao,Bangchang Zhou,Xuebo Xu,Mingdong Bao

DOI: https://doi.org/10.1109/ICT.2001.979890

2001-01-01

Abstract:P-type segmented FeSi2/Bi2Te3 thermoelectric material has been prepared by the dip coating procedure using Sn95Ag5 as the bridge material. An apparent Seebeck coefficient of about 225 μV/K is obtained, which is significantly higher than those of both homogeneous materials β-FeSi2 and Bi2Te3 in the same temperature range. The maximum power output of the segmented FeSi2 /Bi2Te3 is approximately 2.5 times that of the monolithic material β-FeSi2 in the same temperature range. This implies that not only does the segmented material benefit from Bi2Te3 at the low temperature side, but it also makes fully use of the characteristics of β-FeSi2 at high temperature. SEM and EDAX analyses revealed that interdiffusions do to some extent exist in all interfaces. A eutectic mixture could easily be formed since its melting point is lower than the annealing temperature, which trigger the exfoliation in the interface between Sn 95Ag5 and Bi2Te3 under the stress due to the thermal expansion coefficient mismatch of both materials. Although the maximum power output of the material with a Ni layer sandwiched between Sn95Ag5 and Bi2Te3 is a little lower than those of the materials without Ni layer, the thermal stability can be significantly improved
Enhancing thermoelectric performance of SrFBiS2−Se via band engineering and structural texturing

Hai Huang,Chen Lin,Shijing Li,Kai Guo,Jianxin Zhang,Wanyu Lyu,Jiye Zhang,Juanjuan Xing,Ying Jiang,Jiong Yang,Jun Luo

DOI: https://doi.org/10.1016/j.jmat.2021.09.006

IF: 8.589

2022-03-01

Journal of Materiomics

Abstract:SrFBiS2 is a quaternary n-type semiconductor with rock-salt-type BiS2 and fluorite-type SrF layers alternately stacked along the c axis. The tunability of the crystal and electronic structures as well as the intrinsically low thermal conductivity make this compound a promising parent material for thermoelectric applications. In the current work, we show that alloying of Se and S in SrFBiS2 reduces the optical band gap with the second conduction band serving as an electron-transport medium, simultaneously increasing the electron concentration and effective mass. In addition, the raw material Bi2Se3 is shown to act as liquid adjuvant during the annealing process, favoring preferred-orientation grain growth and forming strengthen microstructural texturing in bulk samples after hot-pressed sintering. Highly ordered lamellar grains are stacked perpendicular to the pressure direction, leading to enhanced mobility along this direction. The synthetic effect results in a maximum power factor of 5.58 μW cm−1 K−2 at 523 K for SrFBiSSe and a peak zT = 0.34 at 773 K, enhancements of 180% compared with those of pristine SrFBiS2.

materials science, multidisciplinary,chemistry, physical,physics, applied
Study on the Electronic Structures and Optical Properties of -Fesi2 Using the Pseudopotential Method

Zhang Zhifang,Zhao Shuang,Pan Xiaojie,Y. Y. Zhu

DOI: https://doi.org/10.2991/ifeesm-17.2018.378

2017-01-01

Abstract:Electronic structures and optical properties of bulk β-FeSi 2 are investigated in detail by first principles pseudo-potential methods based on the density function theory.The calculated results show that β-FeSi 2 is a quasidirect band gap material with gap value of 0.74eV.The density of states is mainly composed of Fe 3d and Si 3p states.The dielectric constant, absorption coefficient, and the conductivity are also given.The results are compared with previous theoretical calculation and the available experimental data.
Study on the electronic structures and optical properties of beta-FeSi2 using the pseudopotential method

Qiu Qing Lin,Yuan Jun Jun,Cao Hai Jing,Zhu Yan Yan

2015-01-01

Abstract:Electronic structures and optical properties of bulk beta-FeSi2 are investigated in detail by first principles pseudo-potential methods based on the density function theory. The calculated results show that beta-FeSi2 is a quasidirect band gap material with gap value of 0.74eV. The density of states is mainly composed of Fe 3d and Si 3p states. The dielectric constant, absorption coefficient, and the conductivity are also given. The results are compared with previous theoretical calculation and the available experimental data.
Preparation of Mn - Si Compound and Its Seebeck Effect

张慧云,陈宜保

DOI: https://doi.org/10.3969/j.issn.1005-0299.2008.03.032

IF: 1.8

2008-01-01

Materials Science and Technology

Abstract:The higher manganese silicide MnSi1.7,a refractory transition metal semiconductor,has promising application as thermoelectric conversion element in higher temperature atmospheres.Although many investigations have been made,there are still a lot of problems on the preparation,characterization and optimization of MnSi1.7 thermoelectric materials.In this work,Mn-Si bulk materials were sintered at high temperature in nitrogen atmosphere.The effect of sintered temperature and dwell time on the formation of MnSi1.7phase was studied.The Seebeck coefficient was dependent on the content of MnSi1.7 phase and then reached a saturated value.
Enhancing the Thermoelectric Performance of Sb2Si2Te6 by Germanium Doping

Weihua Wang,Xiaowei Lu,Lin Sun,Jipeng Luo,Quan Shi,Na Ta,Peng Jiang,Xinhe Bao

DOI: https://doi.org/10.1039/d2ta05287c

IF: 11.9

2022-01-01

Journal of Materials Chemistry A

Abstract:Ge-doped Si2Sb2Te6 with a high power factor is promising for intermediate-temperature thermoelectric devices with high output power density and conversion efficiency.
Thermoelectric performance of Te composited with FeTe2 and co-doped with Sb and Se

Weikang Lu,Shangsheng Li,Xubiao Zhou,Hongyu Zhu,Meihua Hu,Bingke Qin,Taichao Su

DOI: https://doi.org/10.1007/s10854-023-11796-7

2024-01-04

Journal of Materials Science Materials in Electronics

Abstract:In recent years, the element semiconductor Te has been considered as a potential thermoelectric material in the middle temperature region due to its excellent thermoelectric performance and high stability. However, it is necessary to dop with high toxic As element or low toxic Bi or Sb under high pressure conditions to obtain a moderate carrier concentration. In this study, we synthesized Sb-Se doped and FeTe 2 composited Te under lower pressure conditions. The results show that the solid solubility of Fe in Te does not exceed 5 at%. After exceeding its solid solubility, Fe is precipitated in the form of FeTe 2 . The electrical transport properties and thermal conductivity of Te were tuned effectively by FeTe 2 composite and Sb doping. The maximum ZT value of the sample with the composition of Fe 0.1 Te 0.9 Sb 0.003 reaches 0.65 at 607 K, which is much higher than that of the pristine Te. The thermal conductivity was further reduced by Se doping. Thereby, the ZT value of the sample Fe 0.1 Te 0.872 Sb 0.003 Se 0.025 was enhanced to 0.76 at 580 K. These results show that combining with doping and composite can improve the thermoelectric properties of Te effectively.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Influence Of Pre-Annealing And Mn Plus Al Double Doping On The Microstructure And Thermoelectric Properties Of Iron Disilicide

Haiyan Chen,Xinbing Zhao,Zeming He,Christian Stiewe,Eckhard W. Müller

DOI: https://doi.org/10.1109/ICT.2006.331230

2006-01-01

Abstract:Iron disilicide based thermoelectric materials with the designed composition Fe1-xMnxAlySi2-y (x=0.06, 0.08; y=0, 0.02, 0.04) were prepared by rapid solidification and hot pressing (1193K, 100 MPa, 30 minutes). The effects of Mn+Al double doping were investigated. The influence of pre-annealing on the microstructure and the transport properties were also studied. X-ray diffraction and scanning electron microscopy show that after pre-annealing at 800 degrees C for only 10 hours, the high temperature phases (a-Fe2Si5 and epsilon-FeSi) in the rapidly solidified powders Fe1-xMnxAlySi2-y have been completely transformed to beta-FeSi2 phase for y=0 and y=0.02. It is found that the grain growth during hot pressing was suppressed for the pre-annealed samples. For the pressed compacts, the Seebeck coefficient was markedly enhanced by the pre-annealing treatment, while both the electrical conductivity and the thermal conductivity were decreased. Mn+AI double doping improves the electrical conductivity, but deteriorates the Seebeck coefficient and the thermal conductivity. The maximum of the figure of merit (ZT = 0.20) is obtained at 890 K for the sample double doped with y=0.04 (Fe0.94Mn0.06Al0.02Si1.98) that is hot pressed from pre-annealed powders.

Progress in Research on Thermoelectric Materials β-FeSi2

Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

TRANSPORT PROPERTIES OF P-TYPE FeSi2 BASED ALLOY DOPED WITH SAMARIUM AND CHROMIUM

Effects of Co on Transport Properties of Sm-doped FeSi2 Based Thermoelectrical Material

Electrical Properties of P-type FeSi_2 Based Thermoelectric Materials Doped with Sm and Mn

Preparation and Thermoelectric Properties of Melt-Spun Fe2si5 Based Alloys

Preparation and Thermoelectric Properties of Melt-Spun Fe 2Si5 Based Alloys

Optical Property and Pseudogap Study of FeSe Thin Films on Different Substrates

Preparation and performance of P-type FeSi2/Bi2Te3 segmented thermoelectric material

Enhanced thermoelectric properties of FeTe 2 by Sb doping prepared by solid-state reaction

Preparation, Thermoelectric Properties and Interface Analysis of N-Type Graded Material Fesi2/Bi2te3

Preparation and performance of n-type FeSi2/Bi2Te3 segmented thermoelectric material

Advances in N-Type Bi2O2Se Thermoelectric Materials: Progress and Perspective

Preparation and interface analyses of a P-type segmented FeSi2/Bi2Te3 material

Enhancing thermoelectric performance of SrFBiS2−Se via band engineering and structural texturing

Study on the Electronic Structures and Optical Properties of -Fesi2 Using the Pseudopotential Method

Study on the electronic structures and optical properties of beta-FeSi2 using the pseudopotential method

Preparation of Mn - Si Compound and Its Seebeck Effect

Enhancing the Thermoelectric Performance of Sb2Si2Te6 by Germanium Doping

Thermoelectric performance of Te composited with FeTe2 and co-doped with Sb and Se

Influence Of Pre-Annealing And Mn Plus Al Double Doping On The Microstructure And Thermoelectric Properties Of Iron Disilicide