Preparation and performance of P-type FeSi2/Bi2Te3 segmented thermoelectric material

崔教林,赵新兵,朱铁军,胡淑红
DOI: https://doi.org/10.3321/j.issn:1004-0609.2001.06.028
2001-01-01
Abstract:The segmented thermoelectric material of P-type β-FeSi2/Bi2Te3 was prepared by means of dip coating procedure and using pure tin as the bridge material. It was found that the apparent Seebeck coefficients of the segmented materials are invariable with the applied temperature difference, and reaches an approximation of 220 to 250 μV/K, which is obviously higher than those of the monolithic ones (β-FeSi2 and Bi2Te3) in the same temperature range. The measurements show that the power outputs of the segmented materials are about 1.5 to 2 times higher than that of the monolithic ones, and remain stationary even when the materials have been annealed at 190 °C 200 h. The microstructure of interfaces shows no visible diffusion of tin in the semiconductor matrixes.
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