Preparation and performance of n-type FeSi2/Bi2Te3 segmented thermoelectric material

Jiaolin Cui,Xinbing Zhao,Tiejun Zhu,ShuHong Hu
2001-01-01
Abstract:The segmented thermoelectric material of n-type β-FeSi2/Bi2Te3 has been prepared by means of dip coating procedure and using pure tin as the bridge material. It was found that the apparent Seebeck coefficients of the segmented materials were in direct proportional to the average temperature applied between hot and cold side, which was obviously higher than those of the monolithic ones (β-FeSi2 and Bi2Te3) in the same temperature range. The measurements showed that the maximum power outputs of the segmented materials were about 2 to 2.5 times of the monolithic ones, and remained unchanged when the materials have been annealed at 190°C for 200 h. The microstructure of the interfaces shows no visible diffusion of tin in the semiconductor matrixes.
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