Abstract:Very recently, a novel layered oxyselenide Bi2O2Se has attracted much attention as a promising n-type eco-friendly thermoelectric material, especially for the n-type counterpart of p-type BiCuSeO. However, very poor electrical conductivity of intrinsic polycrystalline Bi2O2Se prohibits the further development of its thermoelectric performance. In the present work, a novel and facile method using a kitchen blender was developed for large-scale production of Bi2O2Se nanosheets. The electrical transport behavior of the resultant bulk Bi2O2Se via shear exfoliation changes from semiconductivity to metallic, electrical conductivity, which is greatly improved by more than 3 orders of magnitude from 0.1 to 470 S cm-1 at room temperature. Besides, thermal conductivity had been reduced to 0.93 W K-1 m-1 at 773 K. This synergistical promotion of electron-phonon transport could mainly come from increased interfacial defects of shear-exfoliated Bi2O2Se to introduce a large amount of electrons by Se vacancies and induce the intensive scattering of phonons by vacancies and interfaces. A high ZTpeak of 0.5 at 793 K had been achieved for Bi2O2Se with shear exfoliation for 60 min, which is 1.5 times larger than the ZT record of Bi2O2Se-based thermoelectrics. In addition, the figure of merit for the thermoelectric module based on p-type BiCuSeO and n-type Bi2O2Se has been evaluated to be around 0.8 at 793 K, making BiCuSeO-Bi2O2Se module a very promising candidate for mid-temperature thermoelectric applications.

Realization of N-Type and Enhanced Thermoelectric Performance of P-Type BiCuSeO by Controlled Iron Incorporation

Light Element Doping and Introducing Spin Entropy: an Effective Strategy for Enhancement of Thermoelectric Properties in BiCuSeO.

Attempting to Realize N-Type BiCuSeO

Enhancing thermoelectric performance of n-type Bi6Cu2Se4O6 through introducing transition metal elements

Significant Optimization of Electron-Phonon Transport of N-Type Bi2O2Se by Mechanical Manipulation of Se Vacancies Via Shear Exfoliation.

Remarkable Enhancement in Thermoelectric Performance of BiCuSeO by Cu Deficiencies.

Enhanced Thermoelectric Performance of Zn-doped Oxyselenides: BiCu1−x Zn X SeO

Enhanced thermoelectric performance of BiCuSeO through composite structuring with Pb-and La-doped components

Synergistically enhanced thermoelectric properties in n-type Bi6Cu2Se4O6 through inducing resonant levels

High Thermoelectric Performance of BiCuSeO Via Minimizing the Electronegativity Difference in Bi–O Layer

Realizing N-Type BiCuSeO Through Halogens Doping

Rational Electronic and Structural Designs Advance BiCuSeO Thermoelectrics

Synergistically Optimizing Electrical and Thermal Transport Properties of BiCuSeO Via a Dual‐Doping Approach

Isotropic Thermoelectric Performance of Layer-Structured n-Type Bi2Te2.7Se0.3 by Cu Doping

Improved thermoelectric performance of Bi-deficient BiCuSeO material doped with Nb, Y, and P

Electrical and Thermal Transport Behavior in Zn-Doped BiCuSeO Oxyselenides

Enhanced thermoelectric performance of n-type Bi 2 Se 3 doped with Cu

Complex Electronic Structure and Compositing Effect in High Performance Thermoelectric BiCuSeO.

Co-doping for Significantly Improved Thermoelectric Figure of Merit in P-Type Bi1-2xMgxPbxCuSeO Oxyselenides

Thermoelectric properties of Pb-doped BiCuSeO ceramics

Enhanced thermoelectric performance of BiCuSO by Pb doping and Se alloying