Preparation and interface analyses of a P-type segmented FeSi2/Bi2Te3 material

Jiaolin Cui,Xinbing Zhao,Bangchang Zhou,Xuebo Xu,Mingdong Bao
DOI: https://doi.org/10.1109/ICT.2001.979890
2001-01-01
Abstract:P-type segmented FeSi2/Bi2Te3 thermoelectric material has been prepared by the dip coating procedure using Sn95Ag5 as the bridge material. An apparent Seebeck coefficient of about 225 μV/K is obtained, which is significantly higher than those of both homogeneous materials β-FeSi2 and Bi2Te3 in the same temperature range. The maximum power output of the segmented FeSi2 /Bi2Te3 is approximately 2.5 times that of the monolithic material β-FeSi2 in the same temperature range. This implies that not only does the segmented material benefit from Bi2Te3 at the low temperature side, but it also makes fully use of the characteristics of β-FeSi2 at high temperature. SEM and EDAX analyses revealed that interdiffusions do to some extent exist in all interfaces. A eutectic mixture could easily be formed since its melting point is lower than the annealing temperature, which trigger the exfoliation in the interface between Sn 95Ag5 and Bi2Te3 under the stress due to the thermal expansion coefficient mismatch of both materials. Although the maximum power output of the material with a Ni layer sandwiched between Sn95Ag5 and Bi2Te3 is a little lower than those of the materials without Ni layer, the thermal stability can be significantly improved
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