Enhancing the Thermoelectric Performance of Sb2Si2Te6 by Germanium Doping

Weihua Wang,Xiaowei Lu,Lin Sun,Jipeng Luo,Quan Shi,Na Ta,Peng Jiang,Xinhe Bao

DOI: https://doi.org/10.1039/d2ta05287c

IF: 11.9

2022-01-01

Journal of Materials Chemistry A

Abstract:Ge-doped Si2Sb2Te6 with a high power factor is promising for intermediate-temperature thermoelectric devices with high output power density and conversion efficiency.

What problem does this paper attempt to address?

High-performance Sb2Si2Te6 thermoelectric device

Weihua Wang,Quanlin Wang,Lin Sun,Peng Jiang,Xinhe Bao

DOI: https://doi.org/10.1016/j.mtener.2023.101370

IF: 9.257

2023-07-01

Materials Today Energy

Abstract:High-performance thermoelectric (TE) devices are promising for waste-heat recovery and power generation. Recently, Sb2Si2Te6 has been demonstrated as a promising p-type TE material with high performance and low cost. However, Sb2Si2Te6-based TE devices have not yet been fabricated. The performance of TE devices depends on not only TE materials, but also electrode materials and inner interfaces. Herein, we utilize the high throughput strategy to screen the appropriate electrode material and find that cobalt exhibits a low contact resistance (2.47 μΩ cm−2) and a high shear strength (18.03 MPa). Furthermore, we successfully fabricate one eight-couple Sb2Si1.99Ge0.01Te6 (p-type)/Yb0.3Co4Sb12 (n-type) TE module with optimized geometric parameters by the finite element method. The module exhibits a high output power density (0.92 W cm−2) and a decent energy conversion efficiency (4.2%) under a temperature difference of 500 K. Our studies will promote further development of Sb2Si2Te6 materials and Sb2Si2Te6-based devices.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Boosting the Thermoelectric Properties of Ge 0.94 Sb 0.06 Te via Trojan Doping for High Output Power

Yuanxin Jiang,Yu Zhang,Xiaoqiang Wang,LeLe Chen,Jiye Zhang,Yusong Du,Weiwei Xing,Jing-Tai Zhao,Shuankui Li,Kai Guo

DOI: https://doi.org/10.1021/acsami.4c13775

IF: 9.5

2024-10-14

ACS Applied Materials & Interfaces

Abstract:GeTe stands as a promising lead-free medium-temperature thermoelectric material that has garnered considerable attention in recent years. Suppressing carrier concentration by aliovalent doping in GeTe-based thermoelectrics is the most common optimization strategy due to the intrinsically high Ge vacancy concentration. However, it inevitably results in a significant deterioration of carrier mobility, which limits further improvement of the zT value. Thus, an effective Trojan doping strategy via...

materials science, multidisciplinary,nanoscience & nanotechnology
High Power Factor and Thermoelectric Figure of Merit in Sb 2 Si 2 Te 6 through Synergetic Effect of Ca Doping

Tian Xu,Abubakar-Yakubu Haruna,Zheng Ma,Wang Li,Jinmeng Li,Yubo Luo,Dan Zhang,Junyou Yang

DOI: https://doi.org/10.1021/acs.chemmater.1c02895

IF: 10.508

2021-10-11

Chemistry of Materials

Abstract:We report here a high thermoelectric performance in cadmium doped Sb2Si2Te6. The substitution of Ca2+ for Sb3+ provides a synergetic effect on the electrical transport properties, including hole concentration enhancement, valence band maximum flatting, band gap increase, and density of states effective mass enhancement in Sb2Si2Te6. Such effect leads to the highest power factor of 13.5 μW m–1 K–2 at 573 K and average power factor of 12.6 μW m–1 K–2 for Sb1.97Ca0.03Si2Te6. Such enhanced power factor and average power factor are ∼30% and ∼26% higher than that of pristine Sb2Si2Te6 respectively, which is very necessary for the output power optimization of Sb2Si2Te6. In addition, Ca doping also induces extra point defects phonon scattering, leading to a lowest lattice thermal conductivity of ∼0.41 W m–1 K–1 at 823 K for Sb1.99Ca0.01Si2Te6, ∼15% lower than that of pristine Sb2Si2Te6. The simultaneous optimization in power factor and lattice thermal conductivity enables us to achieve a high peak thermoelectric figure of merit ZT of ∼1.3 at 823 K and a high average ZT of ∼0.8 for Sb1.99Ca0.01Si2Te6, showing its potential for power generator at medium temperature.This article has not yet been cited by other publications.

materials science, multidisciplinary,chemistry, physical
High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Chao Li,Haili Song,Zongbei Dai,Zhenbo Zhao,Chengyan Liu,Hengquan Yang,Chengqiang Cui,Lei Miao

DOI: https://doi.org/10.3390/ma15020406

IF: 3.4

2022-01-06

Materials

Abstract:Lead-free and eco-friendly GeTe shows promising mid-temperature thermoelectric applications. However, a low Seebeck coefficient due to its intrinsically high hole concentration induced by Ge vacancies, and a relatively high thermal conductivity result in inferior thermoelectric performance in pristine GeTe. Extrinsic dopants such as Sb, Bi, and Y could play a crucial role in regulating the hole concentration of GeTe because of their different valence states as cations and high solubility in GeTe. Here we investigate the thermoelectric performance of GeTe upon Sb doping, and demonstrate a high maximum zT value up to 1.88 in Ge0.90Sb0.10Te as a result of the significant suppression in thermal conductivity while maintaining a high power factor. The maintained high power factor is due to the markable enhancement in the Seebeck coefficient, which could be attributed to the significant suppression of hole concentration and the valence band convergence upon Sb doping, while the low thermal conductivity stems from the suppression of electronic thermal conductivity due to the increase in electrical resistivity and the lowering of lattice thermal conductivity through strengthening the phonon scattering by lattice distortion, dislocations, and twin boundaries. The excellent thermoelectric performance of Ge0.90Sb0.10Te shows good reproducibility and thermal stability. This work confirms that Ge0.90Sb0.10Te is a superior thermoelectric material for practical application.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Enhanced thermoelectric performance in n-type SrTiO3/SiGe composite.

Jun Wang,Jian-Bo Li,Hao-Yang Yu,Jing Li,He Yang,Xinba Yaer,Xiao-Huan Wang,Hui-Min Liu

DOI: https://doi.org/10.1021/acsami.9b20090

IF: 9.5

2020-01-01

ACS Applied Materials & Interfaces

Abstract:Silicon germanium (SiGe) alloys hold promise for thermoelectric power generation at high temperatures and have been applied in deep-space missions. However, enhancement of the dimensionless thermoelectric figure-of-merit (ZT) is still needed for practical civil applications of SiGe. In this work, we report high-performance oxide/SiGe bulk composites, that were obtained via hot- pressing sintering of mixed powder composed of phosphorus (P) doped SiGe prepared via mechanical alloying, using a ball milling technique and La-Nb-doped SrTiO3 (La-Nb-STO). The La-Nb-STO powder was obtained from ball milling of a bulk La-Nb-STO sample that was sintered via hot pressing of hydrothermally synthesized La-Nb-STO powder. Controlling the amount of La-Nb-STO nanoparticles added to SiGe matrix increased the power factor by optimizing the electron concentration and mobility in the composite. In addition, compared with single-phase P-doped SiGe, the second phase decreased the thermal conductivity because of additional phonon scattering at the interface. As a result, a high ZT of 0.91 was realized in the n-type oxide/SiGe bulk composite at 1000 K, which was 18% larger than for the typical materials used in space flight missions, and 5% higher than the single-phase SiGe alloys obtained in present study. The strategy used in this study could also be viable to further enhance the ZT of nanostructured n-type SiGe and SrTiO3-based oxide materials.
Structural modulation and resonant level enable high thermoelectric performance of GeTe in the mid-to-low temperature range

Guangjie Wu,Zhe Guo,Ruoyu Wang,Xiaojian Tan,Chen Cui,Peng Sun,Haoyang Hu,Jiehua Wu,Guoqiang Liu,Jun Jiang

DOI: https://doi.org/10.1039/d3ta04230h

IF: 11.9

2023-08-22

Journal of Materials Chemistry A

Abstract:GeTe has recently attracted wide attention as a promising mid-temperature thermoelectric candidate, but the poor performance severely limits its practical application. Herein, we demonstrate the significantly improved thermoelectric properties of Sb–InSe codoped GeTe by structural modulation and introducing a resonant level. It is revealed that both the phase transition at lower temperature driven by Sb doping and resonant level induced by InSe doping can increase the density of states effective mass, leading to an improved Seebeck coefficient and power factor over a wide temperature range. Additionally, the Sb–InSe codoping introduces various defects in the GeTe matrix and enhances the phonon scattering to obviously decrease the lattice thermal conductivity in the whole temperature range. With these synergistic effects, the (Ge 0.91 Sb 0.09 Te) 0.99 (InSe) 0.01 sample achieves a peak zT max of 2.1 at 773 K and a high zT avg of 1.61 between 400 and 773 K.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Thermoelectric performance enhancement in p-type Si via dilute Ge alloying and B doping

Samantha Faye Duran Solco,Xian Yi Tan,Danwei Zhang,Jing Cao,Xizu Wang,Qiang Zhu,Suxi Wang,Li Tian Chew,Hongfei Liu,Chee Kiang Ivan Tan,Jing Wu,Dennis Cheng Cheh Tan,Jianwei Xu,Ady Suwardi

DOI: https://doi.org/10.1007/s10853-022-07925-y

IF: 4.5

2022-11-14

Journal of Materials Science

Abstract:Majority of the modern electronics are made up of Si owing to a confluence of beneficial properties such as Earth-abundance, non-toxicity, light-weightedness, and versatile dopability. Yet, the thermoelectric performance of Si is not widely explored, due to the relatively high thermal conductivity of undoped Si. In this work, we devised a strategy combining light Ge alloying and B doping to simultaneously enhance the electronic properties and drastically reduce the thermal conductivity of Si. The phonon scattering brought about by Ge atoms, and optimal carrier concentration brought about by B dopant optimizes the thermal and electronic properties. Consequently, zT of 0.14 was achieved at 873 K for Si 0.97 Ge 0.01 B 0.02 , corresponding to 230% enhancement compared to pristine Si. The strategy reported in this work can be extended to the design of high thermoelectric performance in other Si-based compounds.

materials science, multidisciplinary
Boosting the thermoelectric performance of GeTe by manipulating the phase transition temperature via Sb doping

Yang Jin,Dongyang Wang,Yuting Qiu,Li-Dong Zhao

DOI: https://doi.org/10.1039/d1tc01714d

IF: 6.4

2021-01-01

Journal of Materials Chemistry C

Abstract:With rising Sb content, the crystal symmetry of Sb-doped GeTe elevates by lowing phase transition temperature, thus leading to superior thermoelectric properties. A ZT max of ∼1.8 at 773 K and ZT ave of ∼1.1 can be obtained in Ge 0.9 Sb 0.1 Te.

materials science, multidisciplinary,physics, applied
Synergistically improving the thermoelectric and mechanical performance for p-type MnGe 1− x Sb x Te 2 alloys

Lei Gao,Ximeng Dong,Shuqi Zheng,Wenhao Li,Xinyue Yang

DOI: https://doi.org/10.1039/d1cp05869j

IF: 3.3

2022-01-01

Physical Chemistry Chemical Physics

Abstract:A high TE performance GeMnTe 2 -based material with improved thermoelectric and mechanical properties is obtained by Sb doping. Excellent power factors could be achieved in the tested temperature range.

chemistry, physical,physics, atomic, molecular & chemical
Improved thermoelectric and mechanical performance of Sb2Te3-based materials toward the segmented operation

Hao Wu,Yuxin Sun,Yuxuan Wang,Haixu Qin,Jianbo Zhu,Yuke Zhu,Jinsuo Hu,Muchun Guo,Jing Liu,Ming Liu,Fengkai Guo,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui,Hao Wu,Yuxin Sun,Yuxuan Wang,Haixu Qin,Jianbo Zhu,Yuke Zhu,Jinsuo Hu,Muchun Guo,Jing Liu,Ming Liu,Fengkai Guo,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.1016/j.mtener.2022.101045

IF: 9.257

2022-07-01

Materials Today Energy

Abstract:Sb2Te3-based material is a promising mid-temperature thermoelectric material. However, the high carrier concentration and lattice thermal conductivity of Sb2Te3 lead to a low zT value. In this work, we choose Sb1.85In0.15Te2.98 and utilize Mn doping to enhance the thermoelectric performance. Mn substitution on the Sb site as the acceptor doping modulates the carrier concentration, leading to the increased power factor and the suppressed bipolar effect simultaneously. Meanwhile, the lattice thermal conductivity is also reduced. As a result, the maximum zT at 673 K reaches 1.1, compared to other advanced Sb2Te3-based materials. Furthermore, solid solution strengthening resulting from Mn substitution improves mechanical properties. Combined with Bi0.5Sb1.4925Mn0.0075Te3 to form a segmented device, the theoretical conversion efficiency reaches 13.4% with a temperature difference of 370 K from 303 K to 673 K, highlighting the potential for mid-temperature power generation.

materials science, multidisciplinary,chemistry, physical,energy & fuels
Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Yang Jin,Yuting Qiu,Shulin Bai,Hongyao Xie,Shibo Liu,Tao Hong,Xiang Gao,Yi Wen,Li-Dong Zhao

DOI: https://doi.org/10.1002/aenm.202400623

IF: 27.8

2024-01-01

Advanced Energy Materials

Abstract:Thermoelectric materials are widely researched for their energy conversion capabilities in the fields of power generation and refrigeration. And a superior thermoelectric conversion efficiency requires an excellent power factor and low thermal conductivity. Herein, a remarkable thermoelectric figure of merit(ZT) similar to 2.6 at 673 K is realized in GeTe with 20% addition of CuSbSe2. Multiple synergistic effects of CuSbSe2 alloying collectively contribute to the excellent thermoelectric performance in GeTe. CuSbSe2 alloying effectively tunes ultrahigh carrier density of GeTe to the optimum. The introduction of Cu, Sb, and Se atoms create numerous point defects that scatter high-frequency phonons. Additionally, surplus CuSbSe2 facilitates the formation of copper-selenium phases, which embed at grain boundaries and generate interfaces after sintering. Combining the planar defects evolved from Ge vacancies, multi-dimension defects effectively scatter multiple frequency phonons. An extraordinarily low lattice thermal conductivity of 0.3 Wm(-1) K-1 at 673 K is obtained, approaching the theoretical estimation predicted by Cahill model. Eventually, the peak conversion efficiency of 7.4% is obtained in segmented device with Delta T of 419 K. The commingled effects of CuSbSe2 in GeTe further open up an elitist route to designing high-performance materials.
Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Jianglong Zhu,Xiaobo Tan,Dong Pan,Yanni Luo,Ruiheng Li,Xuri Rao,Ruihuan Cheng,Chengliang Xia,Yue Chen,Qiang Sun,Ran Ang

DOI: https://doi.org/10.1016/j.cej.2023.148135

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:GeTe has attracted widespread attention as an ideal mid-temperature thermoelectric (TE) material, but its peak performance within a narrow mid-temperature range limits the conversion efficiency improvement of future TE devices. Here, to achieve the overall enhancement of GeTe over a broad temperature range, especially near room temperature, we demonstrate the functionally separated electronic band engineering strategy (resonance energy levels and band convergence) coupling the construction of high-density defects by designing multi-element SnSeIn-Sb co-doping. Fundamentally, to distinguish the functions of selected elements, it was found that SnSe alloying mainly promotes the band convergence of GeTe in elevated temperatures, In doping can create the resonance energy level for enhancing the TE performance near room temperature, and Sb can optimize symmetry and the overall carrier concentration, thereby jointly improving the effective mass and Seebeck coefficient. Moreover, the construction of various phonon scattering centers including high-density Ge micro/nano-precipitates, van der Waals gaps, dislocations, and strong stress fields, strongly inhibits phonon transport. Benefiting from these synergistic effects, a peak ZT of - 2.0 at 653 K, ZTave of - 1.2 in the range from 303 to 803 K, and Vickers microhardness of - 234 Hv are obtained in (Ge0.91In0.01Sb0.08Te)0.98(SnSe)0.02 sample. This study demonstrates a promising strategy to optimize thermoelectric performance by selectively co-doping functionally separated elements for developing high-performance TE materials.
Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

Juan Li,Qing Hu,Shan He,Xiaobo Tan,Qian Deng,Yan Zhong,Fujie Zhang,Ran Ang

DOI: https://doi.org/10.1021/acsami.1c11599

2021-07-28

Abstract:The traditional thermoelectric material GeTe has drawn much attention recently because of the reported high thermoelectric performance of the rhombohedral phase in low-temperature ranges, where the split L and Σ band can be reconverged to have a small energy offset and thus high density of state effective mass according to the rhombohedral angle. In addition, In doping in GeTe is also reported to enhance the density of effective mass and therefore increase the Seebeck coefficient because of the induced resonant levels. In this work, In and Pb are doped in GeTe, and In doping leads to an increase in the rhombohedral angle and thus enhanced density of state effective mass in addition to the resonant effect. However, the improved Seebeck coefficient result from In doping is compensated for by a sharp reduction of Hall mobility, leading to no significant enhancement of electronic performance in the rhombohedral phase. By further Pb/Ge doping in the matrix Ge0.95In0.05Te for the optimization of carrier concentration and reduction of lattice thermal conductivity (as low as 0.7 W/mK), a zT as high as ∼1.2 at 550 K and average zT of ∼0.75 between 300 and 550 K are realized in this work, demonstrating GeTe as a promising candidate for near-room-temperature application.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c11599.Temperature-dependent Hall mobility, thermoelectric properties of Ge1–xInxTe, temperature-dependent heat flow, XRD patterns and thermoelectric properties of Pb0.1Ge0.9–xInxTe, and Debye–Callaway model (PDF)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
Enhancing the thermoelectric performance of GeTe through Sb doping and nanocompositing with SiC for reduced thermal conductivity

Xiaoquan Hu,Yu Zhang,Yuanxin Jiang,Chubin Li,Qishuo Yang,Xiaoqiang Wang,Jiye Zhang,Shuankui Li,Kai Guo

DOI: https://doi.org/10.1039/d4qi00451e

IF: 7.779

2024-05-29

Inorganic Chemistry Frontiers

Abstract:Thermal conductivity ( κ ) is a crucial parameter in determining the thermoelectric figure of merit, zT , of thermoelectric materials. Consequently, numerous innovative strategies have been developed in recent years to reduce κ to the glass-like limit for enhanced thermoelectric properties. In this study, we employ a donor-like dopant, Sb, in GeTe to decrease both the electronic and lattice thermal conductivity. By reducing the hole concentration to 1.4 × 10 20 cm −3 in Ge 0.92 Sb 0.08 Te, we achieve a significantly low electronic thermal conductivity of 0.56 W m −1 K −1 at room temperature. Additionally, the strain and mass field fluctuations resulting from the presence of impurity atoms strengthen phonon scattering, effectively suppressing the lattice thermal conductivity. Furthermore, SiC nano-composites are intentionally introduced into the matrix, which leads to grain refinement. The grain boundaries and phase boundaries also contribute significantly to the reduction of lattice thermal conductivity, ultimately resulting in a small value of 0.42 W m −1 K −1 for the sample Ge 0.92 Sb 0.08 Te + 0.2 wt% SiC at room temperature. The Vickers hardnesses for all composite samples are measured which reveal strengthened hardness, thanks to the grain refinement. The improved peak zT for the Ge 0.92 Sb 0.08 Te + 0.2 wt% SiC sample is mostly attributed to the multiple reductions in κ . Through simulation, a high power density of 36 mW has been achieved for a single-leg Ge 0.92 Sb 0.08 Te + 0.2 wt% SiC thermoelectric device with a temperature difference of Δ T = 438 K. Our contribution demonstrates that elemental doping combined with nanocompositing can effectively suppress the thermal conductivity from room temperature to high temperature, beneficial for enhanced thermoelectric properties.

chemistry, inorganic & nuclear
Optimizing Electronic Quality Factor toward High‐Performance Ge 1− x − y Ta x Sb y Te Thermoelectrics: The Role of Transition Metal Doping

Meng Li,Qiang Sun,Sheng‐Duo Xu,Min Hong,Wan‐Yu Lyu,Ji‐Xing Liu,Yuan Wang,Matthew Dargusch,Jin Zou,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/adma.202102575

IF: 29.4

2021-08-16

Advanced Materials

Abstract:Owing to high intrinsic figure-of-merit implemented by multi-band valleytronics, GeTe-based thermoelectric materials are promising for medium-temperature applications. Transition metals are widely used as dopants for developing high-performance GeTe thermoelectric materials. Herein, relevant work is critically reviewed to establish a correlation among transition metal doping, electronic quality factor, and figure-of-merit of GeTe. From first-principle calculations, it is found that Ta, as an undiscovered dopant in GeTe, can effectively converge energy offset between light and heavy conduction band extrema to enhance effective mass at high temperature. Such manipulation is verified by the increased Seebeck coefficient of synthesized Ge1−x−yTaxSbyTe samples from 160 to 180 µV K−1 at 775 K upon doping Ta, then to 220 µV K−1 with further alloying Sb. Characterization using electron microscopy also reveals the unique herringbone structure associated with multi-scale lattice defects induced by Ta doping, which greatly hinder phonon propagation to decrease thermal conductivity. As a result, a figure-of-merit of ≈2.0 is attained in the Ge0.88Ta0.02Sb0.10Te sample, reflecting a maximum heat-to-electricity efficiency up to 17.7% under a temperature gradient of 400 K. The rationalized beneficial effects stemming from Ta doping is an important observation that will stimulate new exploration toward high-performance GeTe-based thermoelectric materials.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres

Deyu Bao,Qiang Sun,Linsen Huang,Jie Chen,Jun Tang,Dali Zhou,Min Hong,Lei Yang,Zhigang Chen

DOI: https://doi.org/10.1016/j.cej.2021.132738

IF: 15.1

2022-01-01

Chemical Engineering Journal

Abstract:Abstract Tremendous efforts have been focusing on the improvement of p-type (Bi, Sb)2Te3-based thermoelectric materials for commercial applications. In this study, we achieve versatile interface engineering through a surface decoration of Bi0.5Sb1.5Te3 by amorphous Sb2S3 combining with spark plasma sintering, which introduces semi-coherent Sb/Bi0.5Sb1.5Te3 interfaces and dopes S into Bi0.5Sb1.5Te3. Semi-coherent Sb/Bi0.5Sb1.5Te3 interfaces strongly scatter phonons and lower energy carriers, leading to decreased thermal conductivity and increased Seebeck coefficient, while the electrical conductivity is not sacrificed due to the compromise of the slightly reduced carrier mobility by interfacial scattering and the increased carrier concentration by S doping. Benefited from the decoupled thermoelectric properties, a significantly enhanced power factor of 3345.40 μW m−1 K−2 and a low thermal conductivity of 0.78 W m−1 K−1 is obtained in Bi0.5Sb1.5Te3-0.4%Sb2S3, leading to a high peak zT of ∼ 1.31 at 330 K, which shows a 54% enhancement compared with pristine Bi0.5Sb1.5Te3. Moreover, a conversion efficiency of ∼ 7.6% can be predicted in a single leg Bi0.5Sb1.5Te3-0.4%Sb2S3-based module under a cold side temperature of 300 K and hot side temperature of 480 K. This study paves a facile amorphous Sb2S3 induced interface engineering strategy for the development of high performance (Bi,Sb)2Te3-based thermoelectric materials.
Combination of Carrier Concentration Regulation and High Band Degeneracy for Enhanced Thermoelectric Performance of Cu3SbSe4

Dan Zhang,Junyou Yang,Qinghui Jiang,Zhiwei Zhou,Xin Li,Jiwu Xin,Abdul Basit,Yangyang Ren,Xu He,Weijing Chu,Jingdi Hou

DOI: https://doi.org/10.1021/acsami.7b08121

2017-08-30

Abstract:The effect of Al-, Ga-, and In-doping on the thermoelectric (TE) properties of Cu3SbSe4 has been comparatively studied on the basis of theoretical prediction and experimental validation. It is found that tiny Al/Ga/In substitution leads to a great enhancement of electrical conductivity with high carrier concentration and also large Seebeck coefficient due to the preserved high band degeneracy and thereby a remarkably high power factor. Ultimately, coupled with the depressed lattice thermal conductivity, all three elements (Al/Ga/In) substituted samples have obtained a highly improved thermoelectric performance with respect to undoped Cu3SbSe4. Compared to the samples at the same Al/In doping level, the slightly Ga-doped sample presents better TE performance over the wide temperature range, and the Cu3Sb0.995Ga0.005Se4 sample presents a record high ZT value of 0.9 among single-doped Cu3SbSe4 at 623 K, which is about 80% higher than that of pristine Cu3SbSe4. This work offers an alternative approach to boost the TE properties of Cu3SbSe4 by selecting efficient dopant to weaken the coupling between electrical conductivity and Seebeck coefficient.
Enhancing Thermoelectric Performance in P-Type Sb2Te3-Based Compounds Through Nb─Ag Co-Doping with Donor-Like Effect.

Wenwei Yang,Wenkai Le,Jingyi Lyu,Jingfeng Li,Zhixing Chen,Qian Zhang,Shenghua Liu,Xiangguo Li,Jing Shuai

DOI: https://doi.org/10.1002/smll.202307798

IF: 13.3

2024-01-01

Small

Abstract:P-type Sb2Te3 has been recognized as a potential thermoelectric material for applications in low-medium temperature ranges. However, its inherent high carrier concentration and lattice thermal conductivity led to a relatively low ZT value, particularly around room temperature. This study addresses these limitations by leveraging high-energy ball milling and rapid hot-pressing techniques to substantially enhance the Seebeck coefficient and power factor of Sb2Te3, yielding a remarkable ZT value of 0.55 at 323 K due to the donor-like effect. Furthermore, the incorporation of Nb─Ag co-doping increases hole concentration, effectively suppressing intrinsic excitations ≈548 K while maintaining the favorable power factor. Simultaneously, the lattice thermal conductivity can be significantly reduced upon doping. As a result, the ZT values of Sb2Te3-based materials attain an impressive range of 0.5-0.6 at 323 K, representing an almost 100% improvement compared to previous research endeavors. Finally, the ZT value of Sb1.97Nb0.03Ag0.005Te3 escalates to 0.92 at 548 K with a record average ZT value (ZTavg) of 0.75 within the temperature range of 323-573 K. These achievements hold promising implications for advancing the viability of V-VI commercialized materials for low-medium temperature application.
Enhanced Thermoelectric Properties of Se-doped Quasi-One-dimensional Van Der Waals Crystal Ta2PdS6

Tongwei Ren,Sanyin Qu,Pengfei Qiu,Chen Ming,Xun Shi

DOI: https://doi.org/10.1063/5.0225369

IF: 4

2024-01-01

Applied Physics Letters

Abstract:Recently, quasi-one-dimensional van der Waals crystal Ta2PdS6 has been reported as a promising thermoelectric material with an extraordinarily high power factor. However, element doping to tune the thermoelectric properties has not been studied yet. Here, we systematically investigated the effect of Se doping on the phase composition, charge transport properties and thermoelectric performance of Se-doped Ta2Pd(S1−xSex)6 (x = 0, 0.02, 0.05, and 0.07) polycrystalline bulk materials. Upon doping Se at the S sites to increase the carrier concentration and mobility, the electrical conductivity of Ta2Pd(S0.93Se0.07)6 is dramatically enhanced, while the S is slightly reduced, yielding a significantly improved power factor compared to that of pristine Ta2PdS6. Consequently, Ta2Pd(S0.93Se0.07)6 exhibits a peak ZT of 0.29 at 700 K when the doping content x = 0.07, which is more than twice that of pristine Ta2PdS6.
Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions

Xusheng Liu,Wu Wang,Yan Wang,Peng Li,Qiqi Tang,Baohai Jia,Zhenlong Huang,Yuan Lin,Binbin Jiang,Jiaqing He

DOI: https://doi.org/10.1002/aenm.202304029

IF: 27.8

2024-03-10

Advanced Energy Materials

Abstract:The low Seebeck coefficient and the high thermal conductivity deteriorate the thermoelectric properties of GeTe. Herein, the Seebeck coefficient is enhanced by promoting band convergency induced by the strongly correlated d, f electrons of rare earth elements. The doping of Pb and Bi causes avoided crossing and hierarchical structure, strengthening the full‐spectrum scattering of phonons and decelerating the sound velocity. As a highly promising thermoelectric material in the mid‐temperature region, pristine GeTe shows deteriorated thermoelectric properties due to the low Seebeck coefficient and the intrinsic high thermal conductivity. Herein, it is discovered that the introduction of strongly correlated d, f electrons by alloying rare‐earth atoms at Ge sites will increase the band effective mass and promote band convergency, which can largely improve the electric transport property. Moreover, the heavy atoms (Pb, Bi) doping induces optical phonon softening and the avoided crossing between acoustic and optical phonon branches, decelerating both optical and acoustic phonon velocities. The modulated composition wave from the fluctuated multi‐component distribution introduces a complicated hierarchical structure including point defects and nanoprecipitates, which provides all‐scale scattering sources for heat‐carrying phonons and results in low lattice thermal conductivity. Consequently, a high zT of 2.4 at 800 K can be obtained in the Ge0.86Pb0.09Bi0.03Ce0.005Te sample due to the combination of strong correlation for d, f electrons and the full‐spectrum scattering for phonons. This work provides an effective strategy to increase the thermoelectric performance of IV–VI compounds by combining the modulated band structure and the softening phonon dispersion.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels

Enhancing the Thermoelectric Performance of Sb2Si2Te6 by Germanium Doping

High-performance Sb2Si2Te6 thermoelectric device

Boosting the Thermoelectric Properties of Ge 0.94 Sb 0.06 Te via Trojan Doping for High Output Power

High Power Factor and Thermoelectric Figure of Merit in Sb 2 Si 2 Te 6 through Synergetic Effect of Ca Doping

High Thermoelectric Performance Achieved in Sb-Doped GeTe by Manipulating Carrier Concentration and Nanoscale Twin Grains

Enhanced thermoelectric performance in n-type SrTiO3/SiGe composite.

Structural modulation and resonant level enable high thermoelectric performance of GeTe in the mid-to-low temperature range

Thermoelectric performance enhancement in p-type Si via dilute Ge alloying and B doping

Boosting the thermoelectric performance of GeTe by manipulating the phase transition temperature via Sb doping

Synergistically improving the thermoelectric and mechanical performance for p-type MnGe 1− x Sb x Te 2 alloys

Improved thermoelectric and mechanical performance of Sb2Te3-based materials toward the segmented operation

Modifying Roles of CuSbSe2 in Realizing High Thermoelectric Performance of GeTe

Functionally Separated Electronic Band Engineering Via Multi-Element Doping Plus High-Density Defects Advances Board-Temperature-range Thermoelectric Performance in GeTe

Enhancing Near-Room-Temperature GeTe Thermoelectrics through In/Pb Co-doping

Enhancing the thermoelectric performance of GeTe through Sb doping and nanocompositing with SiC for reduced thermal conductivity

Optimizing Electronic Quality Factor toward High‐Performance Ge 1− x − y Ta x Sb y Te Thermoelectrics: The Role of Transition Metal Doping

Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres

Combination of Carrier Concentration Regulation and High Band Degeneracy for Enhanced Thermoelectric Performance of Cu3SbSe4

Enhancing Thermoelectric Performance in P-Type Sb2Te3-Based Compounds Through Nb─Ag Co-Doping with Donor-Like Effect.

Enhanced Thermoelectric Properties of Se-doped Quasi-One-dimensional Van Der Waals Crystal Ta2PdS6

Realizing High Thermoelectric Performance in GeTe‐Based Supersaturated Solid Solutions