Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Self-Decomposition of Sio2 Due to Si-Chemical Potential Increase in Sio2 Between Hfo2 and Substrate - Comprehensive Understanding of Sio2-Il Scavenging in Hfo2 Gate Stacks on Si, Sige and Sic-

Self-decomposition of SiO<sub>2</sub> due to Si-chemical potential increase in SiO<sub>2</sub> between HfO<sub>2</sub> and substrate - Comprehensive understanding of SiO<sub>2</sub>-IL scavenging in HfO<sub>2</sub> gate stacks on Si, SiGe and SiC

Thermodynamic Understanding and Analytical Modeling of Interfacial SiO2 Scavenging in HfO2 Gate Stacks on Si, SiGe, and SiC

Interfacial Sio2 Scavenging Kinetics in Hfo2 Gate Stack

Comprehensive Understanding of SiO2-IL Scavenging in HfO2/SiO2/Si Stack

(Invited) Scavenging Kinetics of Interfacial SiO<sub>2</sub> in HfO<sub>2</sub>/SiO<sub>2</sub>/Si Gate Stacks

Kinetic Model For Scavenging Of Sio2 Interface Layer In Hfo2 Gate Stacks

Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks

Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction

(Invited) Scavenging Kinetics of Interfacial SiO2 in HfO2/SiO2/Si Gate Stacks

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

HfO 2 -assisted SiO 2 reduction in HfO 2 /SiO 2 /Si stacks

Heterogeneous Interface-Derived Engineered Electronic Structure of SiO with Enhanced Lithium Storage

Engineering of Substrate Oxidation in Deposited SIC Gate Stacks for Improving Interface Performance

Electrical Performance Improvement In Sio2/Hfsio High-K Gate Stack For Advanced Low Power Device Application

Si Emission from the Sio2/Si Interface During the Growth of Sio2 in the Hfo2/Sio2/Si Structure

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Interdiffusion Studies for HfO2/Si by GIXR and XPS