Abstract:Silicon germanium (SiGe) channels for CMOS are favorable due to high intrinsic carrier mobility and band gap tunability[1] To utilize the superior properties of SiGe, low interface defect density (Dit) must be obtained at the SiGe-high k interface. Germanium oxide (GeOx) is the primary source of interface defects[2]. In comparison with GeOx, SiOx has a higher heat of formation. Using this difference, it is possible to reduce interface defects with selective reduction or diffusion of GeOx by employing an oxygen-scavenging metal as a gate material[4,5] such as aluminum. ALD was performed with TDMAH and H2O to grow 50 cycles (5nm) of HfO2 at 250C. 50 nm thick, 150 um diameter Ni or Al gate metal was deposited by thermal evaporation. C-V measurement were employed to characterized the electronic defects. The interface trap density (Dit) integrated across the band gap was more than an order of magnitude lower for Al vs Ni gated MOSCAPs. From TEM-EELS-EDS measurement, Al gated MOSCAPs were observed to have a very thin interfacial oxide layer (<0.5 nm) with high-k oxide atoms almost directly bonded with the SiGe surface atoms with just a thin SiOx interlyer. Selective scavenging of Ge-O vs Si-O bonds is consistent with a DFT model showing HfO2/SiOx/SiGe interfaces can be defect-free. DFT models also show that two 3- and 5-fold coordinated interfacial Si atoms do not create any mid-gap or band-edge states. These results indicate the need to form a SiOx interface between HfO2 and SiGe, but the same interface may be created with other techniques. The alternative techniques include a selective oxidation of SiGe form SIOx using remote O3 oxidation and ALD of an Si rich layer on SiGe. The key issue is which of the three techniques is manufacturable and can produce both a scale oxide and scaled interlayer. [1] Liu, C. et. al, MRS Bull. 39, 658–662 (2014). [2] Zhang, L. et al, ACS Appl. Mater. Interfaces 8, 19110–19118 (2016). [3] Zhang, L. et al, ACS Appl. Mater. Interfaces 7, 20499–20506 (2015). [4] Kim, H. et al, J. Appl. Phys. 96, 3467–3472 (2004). [5] Frank, M. et al, ECS Solid State Lett. 2, N8–N10 (2012). [6] Sardashti, K. et al. Appl. Surf. Sci. 366, 455–463 (2016)

Self-decomposition of SiO<sub>2</sub> due to Si-chemical potential increase in SiO<sub>2</sub> between HfO<sub>2</sub> and substrate - Comprehensive understanding of SiO<sub>2</sub>-IL scavenging in HfO<sub>2</sub> gate stacks on Si, SiGe and SiC

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Studies of defect states in the interface between SiO2 and a-Si:H films

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Ultralow Defect Density at Sub-0.5 Nm HfO2/SiGe Interfaces Via Selective Oxygen Scavenging

Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe

Ion implantation into Si covered by HfO2 or SiO2 film

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Characteristics of Leakage Current Mechanisms and SILC Effects of HfO2 Gate Dielectric

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3 </sub>Nanolaminate on Si<sub>0.7</sub>Ge<sub>0.3</sub>(100) Surface by Thermal Atomic Layer Deposition

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Leakage Current Behavior in HfO2/SiO2/Al2O3 Stacked Dielectric on 4H-SiC Substrate

An Investigation into the $HfO_2/Si$ Interface: Materials Science Challenges and their Effects on MOSFET Device Performance

Interface and Carrier Transport Behaviour in Al/HfO2/SiO2/SiC Structure

Engineering High- K/sige Interface with ALD Oxide for Selective GeO X Reduction.

Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS