Abstract:Since the 1960's when Gordon Moore proposed that the transistor density in our electronic devices should double every two years while the cost is halved, the semiconductor industry has taken this statement to heart. Over the last few decades, no other industry has seen growth even comparably close to that experienced by the semiconductors industry. This has all been made possible by the unbroken string of ingenious breakthroughs by brilliant minds that have been working tirelessly to shrink down transistors. The latest of which is the use of high-k dielectrics and a return to metal gates combined with 3D-transistor architectures. This has been the enabling technology for the transition from the 90 nm node to the 45 nm node, allowing us to shrink our transistors further without losing additional gate control. The fundamental reason for using a high-k gate dielectric compared to SiO2 is that shrinking our gate oxide further, which is already at a few angstroms, is no longer a feasible option to gain additional gate control. High-k dielectric overcome this by exploiting the fundamental physics of capacitors and the materials science of dielectrics to provide a viable option to increase gate control without the need for successively thinner gate oxides. Hafnium Oxide is the most studied and popular of such materials. Its high dielectric constant ~16-25 and interface stability with silicon at operating temperatures make it an ideal candidate for use in current CMOS technology. Despite its deceivingly simple appearance, the processes involved in the fabrication of such high-k HfO2/Si interfaces are full of process subtleties and nuances. In this term paper we hope to explore the physics and materials science of these high-k HfO2/Si interfaces, discussing the challenges and ways to overcome them when it comes to its actual fabrication, and how this ultimately affects our device performance.

Kinetic Model For Scavenging Of Sio2 Interface Layer In Hfo2 Gate Stacks

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Modeling of direct tunneling current through interfacial oxide and high-K gate stacks

Inversion Layer Mobility in High-k Dielectric MOSFETs - Intrinsic Mobility Degradation by Electric Dipoles at High-k/SiO2 Interface

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

A Novel Characterization Scheme of $\hbox{Si/SiO}_{2}$ Interface Roughness for Surface Roughness Scattering-Limited Mobilities of Electrons and Holes in Unstrained- and Strained-Si MOSFETs

Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.

Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Ion implantation into Si covered by HfO2 or SiO2 film

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Modeling of Gate Current and Capacitance in Nanoscale-MOS Structures

Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs

An Investigation into the $HfO_2/Si$ Interface: Materials Science Challenges and their Effects on MOSFET Device Performance

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations

-type Fermi level pinning at a model interface