Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks

Xiuyan Li,Yajima, T.,Nishimura, T.,Toriumi, A.

2015-01-01

Abstract:This work clarifies roles of substrate-Si in SiO2-IL scavenging in HfO2/SiO2/Si gate stack experimentally, and points out a coupling effect of oxygen vacancy (VO) with SiO2/Si interface from thermodynamic viewpoint.

What problem does this paper attempt to address?

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

J. Gao,G. He,M. Liu,J. G. Lv,Z. Q. Sun,C. Y. Zheng,P. Jin,D. Q. Xiao,X. S. Chen

DOI: https://doi.org/10.1016/j.jallcom.2016.08.289

IF: 6.2

2017-01-01

Journal of Alloys and Compounds

Abstract:In current work, effects of rapid thermal annealing on the interface chemical bonding states, band alignment, and electrical properties of atomic-layer-deposition-derived HfAlO/Al2O3 gate stack on Si substrates have been studied by X-ray photoemission spectroscopy (XPS), UVeVis transmission spectroscopy, and electrical measurements. XPS analyses have shown that HfAlO alloy and mixed silicate (Hf-Al-O-Si) increase after post-deposition annealing process. By means of UVeVis transmission spectroscopy measurements, reduction in band gap for 400 degrees C-annealed sample has been observed. Accordingly, reduction in the valence band offset and increase in the conduction band offset have been detected for Hf-AlO/Al2O3/Si gate stack annealed at 400 degrees C. Various current conduction mechanisms, such as Poole-Frenkel emission, Fowler-Nordheim (FN) tunneling, and space-charge-limited (SCL) conduction, have been analyzed. Detailed electrical measurements reveal that current conduct mechanisms is SCL conduction at lower field region and FN tunneling and SCL conduction are dominant conduction mechanism at higher field region. (C) 2016 Elsevier B.V. All rights reserved.
Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Peng Jin,Gang He,Dongqi Xiao,Juan Gao,Mao Liu,Jianguo Lv,Yanmei Liu,Miao Zhang,Peihong Wang,Zhaoqi Sun

DOI: https://doi.org/10.1016/j.ceramint.2016.01.050

IF: 5.532

2016-01-01

Ceramics International

Abstract:Deposition of high-k HfO2 gate dielectric films on n-type Si and quartz substrates by sol–gel spin-on coating technique has been performed and the structural, optical and electrical characteristics as a function of annealing temperature have been investigated. The structural and optical properties of HfO2 thin films related to annealing temperature are investigated by X-ray diffraction (XRD), ultraviolet–visible spectroscopy (UV–vis), and spectroscopic ellipsometry (SE). Results indicate that the monoclinic form of HfO2 appears when temperature rises through and above 500°C. The reduction in band gap is observed with the increase of annealing temperature. Moreover, the increase of refractive index (n) and density and the decrease of the extinction coefficient with the increase of annealing temperature are obtained by SE measurements. Additionally, the electrical properties based on Al/Si/HfO2/Al capacitor are analyzed by means of the high frequency capacitance–voltage (C–V) and the leakage current density–voltage (J–V) characteristics. And the leakage current conduction mechanisms as functions of annealing temperatures are also discussed.
Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

J. W. Zhang,G. He,L. Zhou,H. S. Chen,X. S. Chen,X. F. Chen,B. Deng,J. G. Lv,Z. Q. Sun

DOI: https://doi.org/10.1016/j.jallcom.2014.05.074

IF: 6.2

2014-01-01

Journal of Alloys and Compounds

Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.
Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

B. Deng,G. He,X. S. Chen,X. F. Chen,J. W. Zhang,M. Liu,J. G. Lv,Z. Q. Sun

DOI: https://doi.org/10.1007/s10854-014-2144-3

2014-01-01

Journal of Materials Science Materials in Electronics

Abstract:High-k gate dielectric HfO2 thin films have been deposited on Si and quartz substrates by radio frequency magnetron sputtering. The structural characteristics, surface morphology, and optical properties of the HfO2/Si gate stacks at various post-annealing temperatures were examined by X-ray diffraction (XRD), atomic force microscopy (AFM), fourier transform infrared spectroscopy (FTIR), ultraviolet–visible spectroscopy (UV–Vis spectroscopy), and spectroscopic ellipsometry (SE). XRD measurement indicates that the 80 W-deposited HfO2 films demonstrate a polycrystalline structure. AFM measurements illustrate that the root mean square of the HfO2 thin films demonstrates an apparent increase with increasing the annealing temperature. Analysis from FTIR indicates that the Si–O–Si bonds vibration peak position shift toward lower wave numbers with increasing the annealing temperature. Combined with UV–Vis spectroscopy and SE measurements, it can be noted reduction in band gap with an increase in annealing temperature has been confirmed. Additionally, increase in refractive index (n) has been confirmed by SE.
Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

S. S. Jiang,G. He,J. Gao,D. Q. Xiao,P. Jin,W. D. Li,J. G. Lv,M. Liu,Y. M. Liu,Z. Q. Sun

DOI: https://doi.org/10.1016/j.ceramint.2016.04.067

IF: 5.532

2016-01-01

Ceramics International

Abstract:The microstructure, optical and electrical properties of HfTiO high-k gate dielectric thin films deposited on Si substrate and quartz substrate by RF magnetron sputtering have been investigated. Based on analysis from x-ray diffraction (XRD) measurements, it has been found that the as-deposited HfTiO films remain amorphous regardless of the working gas pressure. Meanwhile, combined with characterization of ultraviolet-visible spectroscopy (UV–vis) and spectroscopy ellipsometry (SE), the deposition rate, band gap and optical properties of sputtered HfTiO gate dielectrics were determined. Besides, by means of the characteristic curves of high frequency capacitance–voltage (C–V) and leakage current density–voltage (J–V), the electrical parameters, such as permittivity, total positive charge density, border trap charge density, and leakage current density, have been obtained. The leakage current mechanisms are also discussed. The energy band gap of 3.70eV, leakage current density of 1.39×10−5A/cm2 at bias voltage of 2V, and total positive charge density and border trap charge density of 9.16×1011cm−2 and 1.3×1011cm−2, respectively render HfTiO thin films deposited at 0.6Pa, potential high-k gate dielectrics in future CMOS devices.
Studies of defect states in the interface between SiO2 and a-Si:H films

Zhong Chen,Wenyuan Xu

DOI: https://doi.org/10.1016/0040-6090(94)90670-X

IF: 2.1

1994-01-01

Thin Solid Films

Abstract:In this paper, the results of studies on the interface properties in the hydrogenated amorphous silicon thin-film transistors with silicon oxide gate insulators are presented by means of the bias-annealing method. The transfer characteristics before and after bias-annealing are measured. Using a computer program, the field-effect density-of-states are calculated from the transfer characteristics. The results show that the density of states distribution is determined by the Fermi energy during thermal equilibration. These experimental results are explained by the defect-pool model.
Comparative Study of Passivation Mechanism of Oxygen Vacancy with Fluorine in HfO2 and HfSiO4

Qing-Qing Sun,Wei Chen,Shi-Jin Ding,Min Xu,Hong-Liang Lu,Hans-Cristian Lindh-Rengifo,David Wei Zhang,Li-Kang Wang

DOI: https://doi.org/10.1063/1.2719177

IF: 4

2007-01-01

Applied Physics Letters

Abstract:It has been experimentally observed that the incorporated fluorine will greatly improve the reliability of high-permittivity gate dielectric based transistors, but the role of fluorine passivation on leakage current change through gate is still a debated issue. The authors performed first-principles calculations to study the role of fluorine in oxygen vacancies in HfO2 and HfSiO4. They found that fluorine behaves completely differently in these two gate dielectrics. Fluorine can passivate the gap states of HfO2 completely but has no effect on the passivation of oxygen vacancies in HfSiO4, which is a possible explanation to the controversy surrounding varying leakage current.
Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Kai Yan,Wenqing Yao,Yuanyuan Zhao,Liping Yang,Jiangli Cao,Yongfa Zhu

DOI: https://doi.org/10.1016/j.apsusc.2016.08.051

IF: 6.7

2016-01-01

Applied Surface Science

Abstract:The HfO2 films were deposited on SiO2 (native)/n-Si (100) substrates by electron beam evaporation (EBE) technology. The structural evolution of the films during thermal annealing were studied by using grazing incidence X-ray diffraction (GIXRD), Raman spectra and Auger electron spectroscopy (AES), while the change of bonding structure and interface products were obtained by Fourier transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy (XPS). The existence of oxygen vacancies in the surface layer of the as-deposited HfO2 film was confirmed by Auger line shapes, which could facilitate the adsorption of ambient oxygen on the free surface and induce the diffusion of oxygen atoms to the surface layer during thermal annealing. Meanwhile, the newly formed defects in the films could provide more passageways for the diffusion of oxygen atoms to the film-substrate interface layer. The oxygen that diffused to the interface layer was the key factor of the change in the interface structure, which participated in the interface reaction. In addition, the formation amount and bonding structure of the interface products such as suboxide of silicon and hafnium silicate were influenced by the oxygen concentration of the external environment. (C) 2016 Elsevier B.V. All rights reserved.
Oxygen vacancies in high-k oxides

K. Tse,D. Liu,K. Xiong,J. Robertson

DOI: https://doi.org/10.1016/j.mee.2007.04.020

IF: 2.3

2007-01-01

Microelectronic Engineering

Abstract:High dielectric constant (K) gate oxides such as HfO"2 have suffered from charge trapping, threshold voltage shifts and a difficulty of metal or poly-Si gates to achieve band edge work function values. We investigate how these are related to the oxygen vacancies in a series of ab-initio calculations. The O vacancy is found to correlate with optical, luminescence and charge pumping spectra. The O vacancy contributes to the Fermi level pinning effect, which limits the band edge work functions. Inhibiting motion of vacancies may allow less pinning of gate electrode work functions.
Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

X. F. Wang,Quan Li,P. F. Lee,J. Y. Dai,X. G. Gong

DOI: https://doi.org/10.1016/j.micron.2009.07.009

IF: 2.381

2009-01-01

Micron

Abstract:The interfacial structures of HfO(2) and HfAlO thin films on Si have been investigated using spatially resolved electron energy-loss spectroscopy. We have found that interfaces are not atomically sharp, and variation in the symmetry of the local atomic coordination lasts for a couple of monolayers for both the as-deposited HfO(2) and the HfAlO samples. Annealing of the HfO(2) film in the oxygen environment leads to the formation of a thick SiO(2)/SiO(x) stack layer in-between the original HfO(2) and the Si substrate. As a comparison, the interfacial stability is significantly improved by Al incorporation into the HfO(2) film (forming HfAlO), which effectively reduced/eliminated the interfacial silicon oxide formation during the oxygen annealing process. The mechanism of the high-k film/substrate stabilization by Al incorporation is discussed based on the experimental results.
Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS

Ming Zhao,Kaoru Nakajima,Motofumi Suzuki,Kenji Kimura,Masashi Uematsu,Kazuyoshi Torii,Satoshi Kamiyama,Yasuo Nara,Heiji Watanabe,Kenji Shiraishi,Toyohiro Chikyow,Keisaku Yamada

DOI: https://doi.org/10.1149/ma2007-02/20/1122

2007-01-01

Abstract:HfO2/SiO2/Si(001) structures were annealed in dry oxygen, and compositional depth profiles were measured by high-resolution Rutherford backscattering spectroscopy (HRBS). Growth of the interfacial SiO2 layer and simultaneous surface accumulation of Si were observed. The observed result indicates that silicon species are emitted from the SiO2/Si interface to release the stress induced by oxidation as was predicted by theoretical studies. The behavior of oxygen during the annealing was also observed using 18O as a tracer. The observed 18O profile suggests that oxygen molecules are decomposed into atomic oxygen in HfO2 and diffuse through the oxide layer via exchange mechanism. This is also supported by the observed activation energy of ~ 0.6 eV for the growth of the interfacial SiO2 layer.
Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.

Yueyang Liu,Xiangwei Jiang,Liwei Wang,Yunfei En,Runsheng Wang

DOI: https://doi.org/10.1109/irps.2019.8720414

2019-01-01

Abstract:To deeply understand the charge trapping process in high-k gate stacks, we theoretically investigate the hole trapping characteristics of interfacial oxygen vacancies in (110) and (100) Si/SiO2/HfO2 stacks. Si/SiO2 and SiO2/HfO2 interfacial defects are studied, and the hole trapping rate of each defect is calculated through ab initio simulation combining density-functional theory and Marcus theory. Among the possible hole traps considered in this work, it is suggested that the oxygen vacancies at SiO2/HfO2 interface are the dominant under strong negative gate bias stress, and those at Si/SiO2 interface can be effective traps only when hydrogen atom (H) or hydroxyl (OH) is induced at the vacancy. Moreover, the most dominant hole trap among the considered traps in the (110) structure locates at the Si/SiO2 interface, while that in the (100) structure locates at the SiO2/HfO2 interface.
Probing the oxygen vacancy associated native defects in high-κ HfO2 using deep level transient spectroscopy

Arvind Kumar,Sandip Mondal,K. S. R. Koteswara Rao

DOI: https://doi.org/10.1063/5.0185572

IF: 2.877

2024-01-28

Journal of Applied Physics

Abstract:Hafnium oxide (HfO2) has been explored as high-κ gate dielectrics in scaled CMOS devices, artificial synapses to be used in neuromorphic computing to achieve brain-like functionalities, a storage layer in memory devices, a piezoelectric energy harvester, and a photodetector. In this article, the origin of a native defect present in the HfO2 thin films on silicon is experimentally probed using deep level transient spectroscopy (DLTS) technique. It was realized that defects (predominantly oxygen vacancies) in HfO2 segregate near the Si/HfO2 interface. The interfacial and bulk HfO2 trap charges are communicating through the tunneling/ hopping, and, finally, they are emitted to the respective bands of silicon depending on the silicon used. We have observed four prominent defect states, and we believe that all these belong to oxygen vacancies in different charge states. The activation energies of trap states are in the range of 1.22–2.02 eV from the HfO2 conduction band edge, and they fall in front of the Si bandgap in the band alignment of the Al/HfO2/Si gate stack. The capture cross sections of these traps are measured with insufficient filling DLTS and found to be of the order of 10−19 cm2. The results provide valuable insights into realizing the behavior of oxygen vacancy-related deep defects in HfO2 and guide their possible impact on the device performance.

physics, applied
Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Peter Broqvist,Audrius Alkauskas,Alfredo Pasquarello

DOI: https://doi.org/10.1063/1.2907704

IF: 4

2008-03-31

Applied Physics Letters

Abstract:The determination of band alignments and defect levels is demonstrated for the technologically relevant Si–SiO2–HfO2 gate stack. The proposed scheme, which combines first-principles molecular dynamics for model generation and hybrid density functionals for electronic-structure calculations, yields band offsets in close agreement with experiment. Charge transition and pinning levels associated with oxygen vacancies are aligned with respect to the silicon band edges. The vacancies are shown to preferentially reside in the amorphous transition layer, consistent with experimental observations of Fermi-level pinning.

physics, applied
Interface Engineering for Performance and Reliability Optimization of Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Characterization

Xueyang Li,Yaxuan Yuan,Chengji Jin,Xinze Li,Xiao Yu,Bing Chen,Cheng Ran,Genquan Han

DOI: https://doi.org/10.1109/icicdt63592.2024.10717818

2024-01-01

Abstract:We report an integration and comprehensive study of the ozone SiO 2 /HfO 2 interfacial layer (IL) on Hf 0.5 Zr 0.5 O 2 (HZO) ferroelectric field-effect transistors (FeFETs). HZO FeFET with HfO 2 /SiO 2 IL, HfO 2 IL and no IL were fabricated to study the roles of HfO 2 and SiO 2 as ILs. HZO FeFETs with ozone SiO 2 /HfO 2 IL shows great advantages in off-leakage, memory window (MW) and interface trap density, since the HfO 2 layer can enhancement the polarization and the SiO 2 IL is ideal for interface with Si and electrical isolation. As SiO 2 IL greatly suppresses the interface traps, the degradation of MW and interface traps are also optimized with the ozone SiO 2 /HfO 2 IL technique for endurance cycles at a level of 10 4 , showing it an ideal IL engineering technique for the performance and reliability optimization of HfO 2 -based FeFETs.
First-Principles Study of Oxygen Vacancy Defects in β-quartz SiO2/Si Interfaces

Ruogu Zheng,Zhengyu Xu,Muti Feng,Bo Xiang,Hai Wang,Qingbo Wang,Hongxia Zhong

DOI: https://doi.org/10.1088/1361-6463/ad80a3

2024-09-29

Journal of Physics D Applied Physics

Abstract:Understanding the electronic structures of gate oxides in Si-based devices is significant for improving device performance. We investigate the electronic properties of the oxygen vacancy defects in β-quartz SiO2/Si interface structure using first-principles calculations. The results indicate that the constructed (SiO2)4/(Si)4 structure is an indirect-gap semiconductor, with its band edges contributed by Si side and a large band-edge energy difference (> 1.780 eV). Our study reveals that the presence of oxygen vacancy defects reduces the band gap, and VO1 is transformed from indirect into direct band gap. The Si dangling bonds in VO1 cause charge localization around the O vacancy, while the formation of Si-Si bonds in VO2 and VO3 lead to electron delocalization. In the calculation of defect formation energies, we find that VO1 maintains the lowest formation energy across different states, making it more likely to form and structurally stable. Compared to O-rich environments, the formation energy in O-poor environments is overall reduced by approximately 4.5 eV, indicating that oxygen vacancy defects are more likely to form and be controlled under O-poor conditions. Our study emphasizes the importance of interface structure and defect characteristics in semiconductor research, providing insights for the development of Si-based devices.

physics, applied
Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Qide Yao,Xueli Ma,Hanxiang Wang,Yanrong Wang,Guilei Wang,Jing Zhang,Wenkai Liu,Xiaolei Wang,Jiang Yan,Yongliang Li,Wenwu Wang

DOI: https://doi.org/10.3390/nano11040955

IF: 5.3

2021-04-09

Nanomaterials

Abstract:The interface passivation of the HfO2/Si0.7Ge0.3 stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0.7Ge0.3 stack, the dispersive feature and interface state density (Dit) of the HfO2/Si0.7Ge0.3 stack MOS (Metal-Oxide-Semiconductor) capacitor under ozone direct oxidation (pre-O sample) increases obviously. This is because the tiny amounts of GeOx in the formed interlayer (IL) oxide layer are more likely to diffuse into HfO2 and cause the HfO2/Si0.7Ge0.3 interface to deteriorate. Moreover, a post-HfO2-deposition (post-O) ozone indirect oxidation is proposed for the HfO2/Si0.7Ge0.3 stack; it is found that compared with pre-O sample, the Dit of the post-O sample decreases by about 50% due to less GeOx available in the IL layer. This is because the amount of oxygen atoms reaching the interface of HfO2/Si0.7Ge0.3 decreases and the thickness of IL in the post-O sample also decreases. To further reduce the Dit of the HfO2/Si0.7Ge0.3 interface, a Si-cap passivation with the optimal thickness of 1 nm is developed and an excellent HfO2/Si0.7Ge0.3 interface with Dit of 1.53 × 1011 eV−1cm−2 @ E−Ev = 0.36 eV is attained. After detailed analysis of the chemical structure of the HfO2/IL/Si-cap/Si0.7Ge0.3 using X-ray photoelectron spectroscopy (XPS), it is confirmed that the excellent HfO2/Si0.7Ge0.3 interface is realized by preventing the formation of Hf-silicate/Hf-germanate and Si oxide originating from the reaction between HfO2 and Si0.7Ge0.3 substrate.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO 2 /tin Structure for CMOS Applications

Da-Peng Xu,Lin-Jie Yu,Xu-Dong Chen,Lin Chen,Qing-Qing Sun,Hao Zhu,Hong-Liang Lu,Peng Zhou,Shi-Jin Ding,David Wei Zhang

DOI: https://doi.org/10.1186/s11671-017-2068-y

2017-01-01

Nanoscale Research Letters

Abstract:The density of oxygen vacancies characterization in high-k/metal gate is significant for semiconductor device fabrication. In this work, a new approach was demonstrated to detect the density of oxygen vacancies by in situ x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurement. Moreover, the band alignment of the structure with optical band gap measured by spectroscopic ellipsometry (SE) and valence band offset by UPS were reported. The specific areal density of oxygen vacancies in high-k dielectric of HfO2/TiN was obtained by fitting the experiment data to be 8.202 × 1010cm− 2. This study would provide an effective approach to characterize the oxygen vacancies based defects which cause threshold voltage shifts and enormous gate leakage in modern MOSFET devices.
First-principles study of oxygen vacancy defects in orthorhombic Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack

Junshuai Chai,Hao Xu,Jinjuan Xiang,Yuanyuan Zhang,Shujing Zhao,Fengbin Tian,Jiahui Duan,Kai Han,Xiaolei Wang,Jun Luo,Wenwu Wang,Tianchun Ye

DOI: https://doi.org/10.1063/5.0106750

2022-06-21

Abstract:The gate defect of the ferroelectric HfO$_2$-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an effective method for the atomic-scale understanding of gate defects. However, the first-principles study on the defects of FeFET gate stacks, i.e., metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si structure, has not been reported so far. The key challenge is the construction of metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack models. Here, we use the Hf$_{0.5}$Zr$_{0.5}$O$_2$(130) high-index crystal face as the orthorhombic ferroelectric layer and construct a robust atomic structure of the orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack without any gap states. Its high structural stability is ascribed to the insulated interface. The calculated band offsets show that this gate structure is of the type-I band alignment. Furthermore, the formation energies and charge transition levels (CTLs) of defects reveal that the oxygen vacancy defects are more favorable to form compared with other defects such as oxygen interstitial and Hf/Zr vacancy, and their CTLs are mainly localized near the Si conduction band minimum and valence band maximum, in agreement with the reported experimental results. The oxygen vacancy defects are responsible for charge trapping/de-trapping behavior in Si FeFET. This work provides an insight into gate defects and paves the way to carry out the first-principles study of ferroelectric HfO$_2$-based Si FeFET.

Materials Science,Applied Physics,Computational Physics
Comparative study of defect energetics in HfO2 and SiO2

W. L. Scopel,Antônio J. R. da Silva,W. Orellana,A. Fazzio

DOI: https://doi.org/10.1063/1.1650874

IF: 4

2004-03-01

Applied Physics Letters

Abstract:We perform ab initio calculations, based on density functional theory, for substitutional and vacancy defects in the monoclinic hafnium oxide (m-HfO2) and α-quartz (SiO2). The neutral oxygen vacancies and substitutional Si and Hf defects in HfO2 and SiO2, respectively, are investigated. Our calculations show that, for a large range of Hf chemical potential, Si substitutional defects are most likely to form in HfO2, leading to the formation of a silicate layer at the HfO2/Si interface. We also find that it is energetically more favorable to form oxygen vacancies in SiO2 than in HfO2, which implies that oxygen-deficient HfO2 grown on top of SiO2 will consume oxygen from the SiO2.

physics, applied

Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Studies of defect states in the interface between SiO2 and a-Si:H films

Comparative Study of Passivation Mechanism of Oxygen Vacancy with Fluorine in HfO2 and HfSiO4

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Oxygen vacancies in high-k oxides

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS

Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.

Probing the oxygen vacancy associated native defects in high-κ HfO2 using deep level transient spectroscopy

Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

Interface Engineering for Performance and Reliability Optimization of Hf0.5Zr0.5O2 FeFETs: Device Integration and Electrical Characterization

First-Principles Study of Oxygen Vacancy Defects in β-quartz SiO2/Si Interfaces

Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

In Situ Analysis of Oxygen Vacancies and Band Alignment in HfO 2 /tin Structure for CMOS Applications

First-principles study of oxygen vacancy defects in orthorhombic Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack

Comparative study of defect energetics in HfO2 and SiO2