Abstract:SiO2-interface layer (IL) “scavenging” in high-k gate stacks needs to be understood for the interface control as well as for further EOT scaling. A simple model that the oxygen vacancy (Vo) was involved in the scavenging was proposed, but further details have not been elucidated well. We have studied the SiO2-IL scavenging in HfO2/SiO2/Si gate stacks in UHV condition in place of metal electrode scavenging. This method has enabled us to study the diffusion and reaction in this system from the top surface without a metal gate. In this talk, we particularly focus on the following three steps in the scavenging process. (1) VO diffusion kinetics in scavenging This has been studied by controlling as-deposited HfO2 stoichiometry by changing the deposition conditions. (2) Substrate effect on scavenging Various types of substrates with a same gate stack have been used for the scavenging experiment. (3) Si diffusion kinetics in scavenging Si out-diffusion from HfO2/SiO2/Si gate stacks has been investigated through the mass spectroscopy. We present experimental results in each step. In particular, we notice that SiO2/Si interaction may be involved in this process, as well as that the scavenging causes SiO2-IL reduction. Furthermore, we propose an analytical model for the SiO2-IL scavenging. Interestingly, it looks like the Deal-Grove model for Si oxidation, but coefficients are related to each other in the scavenging. These results are important not only for scavenging SiO2-IL in HfO2/SiO2/Si stacks but also for establishing the oxide electronics, because understanding of both cation and anion kinetics in oxides is critical to control the hetero-interface characteristics.

(Invited) Scavenging Kinetics of Interfacial SiO2 in HfO2/SiO2/Si Gate Stacks

(Invited) Scavenging Kinetics of Interfacial SiO<sub>2</sub> in HfO<sub>2</sub>/SiO<sub>2</sub>/Si Gate Stacks

Interfacial Sio2 Scavenging Kinetics in Hfo2 Gate Stack

Kinetic Model for Scavenging of SiO2 Interface Layer in HfO2 Gate Stacks

Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks

Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction

Thermodynamic Understanding and Analytical Modeling of Interfacial SiO2 Scavenging in HfO2 Gate Stacks on Si, SiGe, and SiC

Comprehensive Understanding of SiO2-IL Scavenging in HfO2/SiO2/Si Stack

Self-decomposition of SiO<sub>2</sub> due to Si-chemical potential increase in SiO<sub>2</sub> between HfO<sub>2</sub> and substrate - Comprehensive understanding of SiO<sub>2</sub>-IL scavenging in HfO<sub>2</sub> gate stacks on Si, SiGe and SiC

Significance of kinetic-linkage of oxygen vacancy with SiO2/Si interface for SiO2-IL scavenging in HfO2 gate stacks

Self-Decomposition of Sio2 Due to Si-Chemical Potential Increase in Sio2 Between Hfo2 and Substrate - Comprehensive Understanding of Sio2-Il Scavenging in Hfo2 Gate Stacks on Si, Sige and Sic-

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

HfO 2 -assisted SiO 2 reduction in HfO 2 /SiO 2 /Si stacks

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate