Abstract:SiO2-interface layer (IL) “scavenging” in high-k gate stacks needs to be understood for the interface control as well as for further EOT scaling. A simple model that the oxygen vacancy (Vo) was involved in the scavenging was proposed, but further details have not been elucidated well. We have studied the SiO2-IL scavenging in HfO2/SiO2/Si gate stacks in UHV condition in place of metal electrode scavenging. This method has enabled us to study the diffusion and reaction in this system from the top surface without a metal gate. In this talk, we particularly focus on the following three steps in the scavenging process. (1) VO diffusion kinetics in scavenging This has been studied by controlling as-deposited HfO2 stoichiometry by changing the deposition conditions. (2) Substrate effect on scavenging Various types of substrates with a same gate stack have been used for the scavenging experiment. (3) Si diffusion kinetics in scavenging Si out-diffusion from HfO2/SiO2/Si gate stacks has been investigated through the mass spectroscopy. We present experimental results in each step. In particular, we notice that SiO2/Si interaction may be involved in this process, as well as that the scavenging causes SiO2-IL reduction. Furthermore, we propose an analytical model for the SiO2-IL scavenging. Interestingly, it looks like the Deal-Grove model for Si oxidation, but coefficients are related to each other in the scavenging. These results are important not only for scavenging SiO2-IL in HfO2/SiO2/Si stacks but also for establishing the oxide electronics, because understanding of both cation and anion kinetics in oxides is critical to control the hetero-interface characteristics.

(Invited) Scavenging Kinetics of Interfacial SiO<sub>2</sub> in HfO<sub>2</sub>/SiO<sub>2</sub>/Si Gate Stacks