Abstract:SiO2-interface layer (IL) “scavenging” in high-k gate stacks needs to be understood for the interface control as well as for further EOT scaling. A simple model that the oxygen vacancy (Vo) was involved in the scavenging was proposed, but further details have not been elucidated well. We have studied the SiO2-IL scavenging in HfO2/SiO2/Si gate stacks in UHV condition in place of metal electrode scavenging. This method has enabled us to study the diffusion and reaction in this system from the top surface without a metal gate. In this talk, we particularly focus on the following three steps in the scavenging process. (1) VO diffusion kinetics in scavenging This has been studied by controlling as-deposited HfO2 stoichiometry by changing the deposition conditions. (2) Substrate effect on scavenging Various types of substrates with a same gate stack have been used for the scavenging experiment. (3) Si diffusion kinetics in scavenging Si out-diffusion from HfO2/SiO2/Si gate stacks has been investigated through the mass spectroscopy. We present experimental results in each step. In particular, we notice that SiO2/Si interaction may be involved in this process, as well as that the scavenging causes SiO2-IL reduction. Furthermore, we propose an analytical model for the SiO2-IL scavenging. Interestingly, it looks like the Deal-Grove model for Si oxidation, but coefficients are related to each other in the scavenging. These results are important not only for scavenging SiO2-IL in HfO2/SiO2/Si stacks but also for establishing the oxide electronics, because understanding of both cation and anion kinetics in oxides is critical to control the hetero-interface characteristics.

HfO 2 -assisted SiO 2 reduction in HfO 2 /SiO 2 /Si stacks

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Interfacial Sio2 Scavenging Kinetics in Hfo2 Gate Stack

Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS

Comprehensive Understanding of SiO2-IL Scavenging in HfO2/SiO2/Si Stack

(Invited) Scavenging Kinetics of Interfacial SiO2 in HfO2/SiO2/Si Gate Stacks

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Interdiffusion Studies for HfO2/Si by GIXR and XPS

(Invited) Scavenging Kinetics of Interfacial SiO<sub>2</sub> in HfO<sub>2</sub>/SiO<sub>2</sub>/Si Gate Stacks

Interfacial and Electrical Characterization of HfO2 Gate Dielectric Film with a Blocking Layer of Al2O3

Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction

Oxidation Process of HfO/sub 2//sio/sub 2//si Structures Observed by High-Resolution RBS

Influence of NH3 Annealing on the Chemical States of HfO2/Al2O3 Stacks Studied by X-ray Photoelectron Spectroscopy

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Effect on passivation mechanism and properties of HfO 2 /crystalline-Si interface under different annealing atmosphere