Abstract:As one of the leading photovoltaic materials, Cu(In,Ga)(Se,S)(2) has two distinct advantages over other candidates. First, its conduction band and valence band could be independently tuned by adjusting the Ga/(Ga + In) and S/(S + Se), respectively. Next, its composition distribution could be feasibly tuned by controlling the thin film deposition process. These merits have been utilized in fabricating the Cu(In,Ga)(Se,S)(2) solar cells with world record efficiency. However, these features have not yet been satisfactorily simulated. In order to understand the mechanism of high-performance Cu(In,Ga)(Se,S)(2) solar cells, we obtained the tunable bandgap of absorber layer and suitable conduction band offset between absorber layer and buffer layer via Ga and S concentration and gradient, by combining both first-principle calculations and numerical simulations with Poisson equation and the continuity equation. In particular, compared with other photovoltaic materials, the bandgap of Cu(In,Ga)(Se, S)(2) could be tuned flexibly across the layer thickness to realize spatial energy band optimization with doubleconcentration-grading absorber. The efficiency of 23.29% was obtained based on theoretical calculations and numerical simulations, which is almost the same as the reported result, in the considerations of (i) optimum bandgap of absorber, (ii) band energy offset, (iii) double (Ga- and S-) concentration grading, and (iv) low defect density in the absorber layer. In addition, we obtained a Cu(In,Ga)(Se,S)(2) solar cell with a high S content uniform band gap efficiency of 23.53%. Therefore, we provided an understanding for tunable engineered band energy research in high-efficient Cu(In,Ga)(Se,S)(2) solar cells.

Effect of the Chemical Composition of Cu–In–Ga–Se Layers on the Photoconductivity and Conversion Efficiency of CdS/CIGSe Solar Cells

Increasing surface band gap of Cu(In,Ga)Se2 thin films by post depositing an In-Ga-Se thin layer.

Research progress on synthesis of CuIn 1-xGa xSe 2 nanoparticles

Influences of Ga Concentration on Performances of CuInGaSe2 Cells Fabricated by Sputtering-Based Method with Ceramic Quaternary Target

Cesium Modulation in Cu(In, Ga)(S, Se) 2 Solar Cells: Comprehensive Analysis on Interface, Surface, and Grain Boundary

Cu(In,Ga)Se2-based Solar Cells Prepared from Se-containing Precursors

Structural Analysis of Cu(In1-Xgax)Se-2 Multi-Layer Thin Film Solar Cells

Research progress on synthesis of CuIn1-x Gax Se2 nanoparticles

Synthesis and Characterization of CIGS Powder

Effect of Cd diffusion on the electrical properties of the Cu(In,Ga)Se2 thin-film solar cell

Study of microstructure and optical absorption properties of Cu(In,Ga,Al)Se2 powders

Indium-Gallium Segregation in CuIn$_{x}$Ga$_{1-x}$Se$_2$: An ab initio based Monte Carlo Study

Growth and Characterization of Copper Indium Gallium Diselenide Films for Solar Cells Fabrication

Optimization of CuInGaSSe properties and CuInGaSSe/CdS interface quality for efficient solar cells processed with CuInGa precursors

Gallium Diffusion in Cigs Thin Films Prepared by Sequential Sputtering/Selenization Technique

Influence of Ga Concent of CuInGa Precursor on Stoichiometry of Cu(In1 - xGax) Se2 Photon Absorption Films

Effect of Ga Variation on the Bulk and Grain‐Boundary Properties of Cu(In,Ga)Se2 Absorbers in Thin‐Film Solar Cells and Their Impacts on Open‐Circuit Voltage Losses

The Impact of Ga and S Concentration and Gradient in Cu(In,Ga)(Se,S)2 Solar Cells

Interface Engineering for High-Efficiency Solution-Processed Cu(In,Ga)(S,Se)2 Solar Cells via a Novel Indium-Doped CdS Strategy

The Relationships Between Electronic Properties and Microstructure of Cu(In,Ga)Se-2 Films Prepared by Sputtering from A Quaternary Target

Effect of Se Vapor Concentration on Cigs Film Preparation