Abstract:In this Letter, trapping effects of a Schottky lightly Mg-doped p-GaN gate stack for low-power applications have been investigated, and further analysis focusing on AlGaN/GaN interface traps under γ-ray irradiation has been carried out. A negligible shift in the flatband voltage with γ-ray irradiation dose up to 800 krad indicates the superior radiation tolerance of the p-GaN gate structure. The difference between capacitance dispersion at the measurement frequency below and above 500 kHz is observed, which is attributed to trapping effects in different locations with varying gate voltage. Moreover, the frequency-dependent conductance method is put forward to assess the effects of different doses of γ-ray irradiation on the AlGaN/GaN interface traps. Based on that method, aside from the shallow trap states [the trap activation energy (ET) is about 0.334–0.338 eV] previously found in the traditional normally on high electron mobility transistor (HEMT), another type of deeper trap states at the AlGaN/GaN interface (ET is about 0.467–0.485 eV) is detected. It is observed that the ET of shallow trap states distributes at a deeper and broader range as the irradiation dose increases. Additionally, the trap density decreased after 600 krad doses irradiation but increased after 800 krad doses irradiation for both deep and shallow ET. Transmission electron microscopy and atomic force microscopy are used to demonstrate the smooth AlGaN/GaN interface morphology, which will not be greatly damaged after 800 krad doses of γ-ray irradiation. This work can provide a further understanding of radiation tolerance and trapping effects of p-GaN gate HEMTs for low-voltage applications.

Evolution of Activation Energy of Interface Traps in LPNP Transistors Characterized by Deep-Level Transient Spectroscopy

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

Impact of Interface Traps Generation on Flicker Noise Degradation in SI Pmosfets

Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy

Studies of NBTI in Pmosfets with Thermal and Plasma Nitrided SiON Gate Oxides by OFIT and FPM Methods

Investigation of Trapping Effects in Schottky Lightly Doped P-GaN Gate Stack under Γ-Ray Irradiation

Observation and Origin of Anomalous Early Recovery of Base Currents in Low-Dose-Rate γ-Ray-Irradiated PNP Transistors

Emission and capture characteristics of deep hole trap in n-GaN by optical deep level transient spectroscopy

Field Related Passivation of Interface Trap after High-Field Electron Injection

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

Study of microscopic mechanisms in HAT-CN/NPB interface devices under consideration of trap action

Correlation of Radiation-Induced Interface Traps With Band Edge Energy Through Band Structure-Based Analysis of Electrostatics of UTB SOI Devices

Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor

Extraction of the Lateral Distribution of Interface Traps in MOSFETs by a Novel Combined Gated-Diode Technique

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

The Effects of Gamma Irradiation on Neutron Displacement Sensitivity of Lateral PNP Bipolar Transistors

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

Evaluation of Trapping Behaviors in Forward Biased Schottky-Type p-GaN Gate HEMTs

Effect of Interface Traps and Oxide Charge on Drain Current Degradation in Tunneling Field-Effect Transistors

A test structure and spectroscopic method for monitoring interface traps