Abstract:Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk charge traps is generally qualitative or uses generalized models that do not consider the trap's particular electronic structure. The electric field within a wide-bandgap semiconductor is nonetheless a crucial quantity in determining the operation of semiconductor devices and the performance of solid-state single-photon emitters embedded within the semiconductor devices. In this work we accurately compute the average electric field measured at the location of N$V^-$ charged defects for the substitutional N (N$_\text{C}$) concentration of $n_{\text{N}_\text{C}} \approx 1.41\times10^{18}$ cm$^{-3}$ for the commonly used oxygen-terminated diamond (see [D. A. Broadway $et$ $al$., Nature Electronics 1, 502 (2018)]). We achieve this result by evaluating the leading-order contribution to the electric field far away from the surface, which comes from the N$_\text{C}$ defects that induce the ionization of the N$V^-$. Our results use density-functional theory (DFT) and the principle of band bending. Our work has the potential to aid both in the prediction of the functioning of semiconductor devices and in the prediction and correction of the spectral diffusion that often plagues the optical frequencies of solid-state single-photon emitters upon repeated photoexcitation measurements. Our results for the timescales involved in thermally driven charge transfer also have the potential to aid in investigations of charge dynamics.

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On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Implementation Of Temperature Dependent Contact Resistance Model For The Analysis Of Deep Submicron Devices Under Esd

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

New Insights into the Interface Trap Generation during Hot Carrier Degradation: Impacts of Full-band Electronic Resonance, (100) vs (110), and nMOS vs pMOS

Interface Trap Effect on the n-Channel GaN Schottky Barrier-Metal-Oxide Semiconductor Field-Effect Transistor for Ultraviolet Optoelectronic Integration

Interface trap density metrology from sub-threshold transport in highly scaled undoped Si n-FinFETs

Numerical Modeling of Oxide and Interface Charge Buildup in Field Oxide Transistors During Irradiation and Annealing

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

Impact of Interface Trap Distribution on the Performance of LTPS TFT

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Interface trap induced RF and low frequency noise analysis under temperature variations of a hetero-stacked source L-gate TFET

Analytical Model for Interface Traps-Dependent Back Bias Capability and Variability in Ultrathin Body and Box FDSOI MOSFETs

Extensive thermal-range simulation study of interface traps and oxide charges in an oxide-optimized MOS-capacitive radiation sensor for space applications

Theoretical Investigation of Charge Transfer Between Two Defects in a Wide-Bandgap Semiconductor

A test structure and spectroscopic method for monitoring interface traps

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors

Mobility effects due to doping, temperature and interface traps in gate-all-around FinFETs