Abstract:There is an urgent need in surface mount technology (SMT) for a nontoxic, reusable and low temperature bonding technique which can afford good mechanical support as well as electrical contact. Meanwhile in the nanotechnology, many excellent and unique structure-related properties such as the high mechanical strength, the high conductivity and the adhesion ability of gecko feet have been studied. Our lab proposes a new patterned structure of Au nanowire array named nanowire surface fastener (NSF), which cold bonding for surface mount technology can be realized at room temperature. Then various methods have been developed to fabricate nanowire, such as arc discharge, catalytic CVD growth and template synthesis, and so on. Among these methods, the template method has been widely used for preparing one-dimensional nanostructures such as metals, semiconductors, polymers, and other materials by electrochemical, electroless deposition or sol-gel technique. Especially anodic aluminum oxide template assisted way has attached considerable attention due to its unique structure properties, such as controllable pore diameter, extremely narrow pore size distribution with high densities, high aspect ratios, and ideally cylindrical pore shape. The well arranged porous anodic aluminum oxide membrane is fabricated from aluminum film by two steps zM oxalic acid electrolytes. The anodic aluminum oxide membrane was investigated for features such as pore size, interpore distance, and thickness by 40 V. It is important for fabrication of porous anodic aluminum oxide template to find out elimination of the barrier layer of oxide and the pore extending rate by 0.5 M phosphoric acid. Morphologies of surface of aluminum film between anodization process and the anodic aluminum oxide barrier layer was researched by using atomic force microscope and scanning electron microscope. Results showed that the anodic aluminum oxide having the same diameter of the pore and the well arranged pore array without branching channel was obtained. The diameter of the pore before the pore extending treatment is 42 nm and the diameter of the pore after the pore extending treatment for 30 minutes is 86 nm. It was found that the diameter of the pore increased per 15 nm by the pore extending treatment for 10 minutes. We fabricated the through-hole anodic aluminum oxide template and made Cu nanowire by the template of our own making. By using Cu nanowire, we try to produce nanowire surface fastener and evaluate its properties.

NANOMETER-SCALE OXIDATION STRUCTURES PRODUCEDBY CONDUCTIVE ATOMIC FORCE MICROSCOPE

Study on Nanofabrication with Dynamic Electrical-Field-induced Anodic Oxidation

Effect of the tip-sample contact force on the nanostructure size fabricated by local oxidation nanolithography.

3-D finite element calculation of electric field enhancement for nanostructures fabrication mechanism on silicon surface with AFM tip induced local anodic oxidation

Impact of Various Parameters on Nanostructures Fabrication Mechanism on Silicon Surface with AFM Tip Induced Local Anodic Oxidation

Fabrication of Anodic Aluminum Oxide Template and Cu Nanowire Surface Fastener

Method for Fabricating Micro/Nanostructures Via Scanning Probe Microscope and Anisotropic Wet Etching

Preparation of Micro/Nanostructures by AFM Field-induced Oxidation

Fabrication and Application of Nano-Porous Aluminum

Fabrication of regular nanostructures on the surface of Si by AFM anodic oxidation

Mechanical Writing of N-Type Conductive Layers on the SrTiO3 Surface in Nanoscale

Local Anodic Oxidation of Superconducting NbN Thin Films by an Atomic Force Microscope

Nano-fabrication System Based on Atomic Force Microscopy

Characteristics of Local Anodic Oxidation of Silicon Surfaces by AFM and Fabrication of Nanoscale Metrology Standard Sample

Local Oxidation of Titanium Thin Films Using an Atomic Force Microscope under Static and Pulsed Voltages

Fabrication of Nanostructures on the Surface of Titanium Film Using SPM Nanolithograpy Technique

Manufacturing Structures in Nanometer Scale by Nanomanipulation

CMOS-Compatible Electrochemical Nanoimprint:High Throughput Fabrication of Ordered Microstructures on Semiconductor Wafer by Using a Glassy Carbon Mold

CMOS-compatible Electrochemical Nanoimprint: High Throughput Fabrication of Ordered Microstructures on Semiconductor Wafer by Using a Glassy Carbon Mold

Field electron emission from ultra-high density Si nanotip arrays

Nanoscale Semiconductor Processes Using STM and AFM Lithographies. Fabrication of Nanometer-to-atomic-scale Structures Using STM and AFM.