Mechanism of Plasma Charging Damage on Ultrathin Gate Oxide

刘之景,曹继,王克逸

DOI: https://doi.org/10.3969/j.issn.1003-353x.2002.05.020

2002-01-01

Abstract:The mechanism of charging damage on ultrathin gate oxide of MOSFET during theplasma processing is discussed in this paper. The model of impact ionization is used to explaine thereason why the ultrathin gate oxide has better immunity to plasma charging damage than the thickergate oxide.

What problem does this paper attempt to address?

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

hao guan,m f li,yaohui zhang,byung jin cho,b b jie,j xie,j l f wang,andrew c yen,george t t sheng,zhong dong,weidan li

DOI: https://doi.org/10.1109/IRWS.1999.830554

1999-01-01

Abstract:The direct-current current-voltage (DCIV) method is presented to be an effective monitor for predicting plasma charging damage in ultra thin gate oxides. The DCIV experiments in deep submicron p-MOSFETs with 50 Å and 37 Å oxide and with various metal antenna structures clearly indicate a plasma damage region on the wafers. High initial interface trap density, rapid latent degradation and low charge to soft breakdown were found in the serious plasma damage region
Nondestructive Dciv Method to Evaluate Plasma Charging Damage in Ultrathin Gate Oxides

H Guan,YH Zhang,BB Jie,YD He,MF Li,Z Dong,J Xie,JLF Wang,AC Yen,GTT Sheng,WD Li

DOI: https://doi.org/10.1109/55.761026

IF: 4.8157

1999-01-01

IEEE Electron Device Letters

Abstract:Understanding and minimizing plasma charging damage to ultrathin gate oxides become a growing concern during the fabrication of deep submicron MOS devices, Reliable detecting techniques are essential to understand its impact on device reliability, As the gate oxide thickness of MOST's rapidly scales down, the conventional nondestructive methods such as capacitor C-V and threshold voltage and subthreshold swing of MOST's are no longer effective for evaluating this damage in gate oxide, In this paper, the new developed direct-current current-voltage (DCIV) technique is-reported as an effective monitor for plasma charging damage in ultrathin oxide. The DCIV measurements for p-MOST's with both 50- and 37-Angstrom gate oxides clearly show the plasma charging damage region on the wafers and are consistent with the results of charge-to-breakdown measurements, In comparing with charge-to-breakdown measurement and other conventional methods, the DCIV technique has the advantages of nondestructiveness, high sensitivity and rapid evaluation.
Increased hole trapping in gate oxides as latent damage from plasma charging

Tomasz Brozek,Chand R Viswanathan

DOI: https://doi.org/10.1088/0268-1242/12/12/002

IF: 2.048

1997-12-01

Semiconductor Science and Technology

Abstract:With aggressive device scaling and the wide use of plasma-assisted processes, the device damage caused by process-induced charging is receiving growing attention, from both basic understanding and technological points of view. The paper presents results of hole-trapping studies in the thin gate oxide of plasma-damaged NMOS and PMOS transistors. In addition to neutral electron traps and passivated interface damage, which are commonly observed in plasma charging latent damage, we observed and identified hole traps, generated by plasma stress. Enhanced hole trapping in the gate oxide of plasma-damaged devices was studied using Fowler - Nordheim stress and substrate hot-hole injection applied to antenna test structures sensitive to process-induced charging. The number of hole traps increases with increasing antenna ratio, indicating that the mechanism of hole-trap generation is based on electrical stress and current flow, forced through the oxide due to charging under plasma etching or ion implantation conditions.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter
Gate-induced Drain Leakage Current Enhanced by Plasma Charging Damage

SG Ma,YH Zhang,MF Li,WD Li,J Xie,GTT Sheng,AC Yen,JLF Wang

DOI: https://doi.org/10.1109/16.918252

IF: 3.1

2001-01-01

IEEE Transactions on Electron Devices

Abstract:Correlation between gate-induced drain leakage current (GIDL) current I-GIDL and plasma charging damage is investigated for the p-MOSFETs, I-GIDL and maximum charge pumping current show the same trend as a function of antenna area ratio (AAR) and cell location. Enhancement of I-GIDL is mainly attributed to the increase of Si/SiO2 interface traps generated in the plasma processes and is not related to the small amount of trapped charge in the oxide.
Sensitivity and limitations of plasma charging damage measurements using MOS capacitors structures

Shawming Ma,W.L.N. Abdel-Ati,P. McVittie

DOI: https://doi.org/10.1109/55.622516

IF: 4.8157

1997-09-01

IEEE Electron Device Letters

Abstract:This work investigates the sensitivity and limitation of capacitor testing for measuring potential charging damage to gate oxides after a given plasma step. Ramp breakdown measurements are quick and easy to automate but lack sensitivity. Accelerated charge-to-breakdown measurements offers better sensitivity but with long measurement times. V-t measurements using the slope dV/dt after initial charging are found to be very sensitive to charge damage. The damage sensitivity of this method is high and involves tradeoffs between antenna ratio, testing current and testing time. All of which are critical to damage testing. Leakage measurements offers short measurement times and high sensitivity but are limited by the noise level of the measurement system and by the need to make good probe contact to the gate material.

engineering, electrical & electronic
Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

Xintian Zhou,Haoyang Pang,Yunpeng Jia,Dongqing Hu,Yu Wu,Shida Zhang,Yuan Li,Xinyu Li,Lihao Wang,Xingyu Fang,Yuanfu Zhao

DOI: https://doi.org/10.1109/ted.2021.3091951

IF: 3.1

2021-08-01

IEEE Transactions on Electron Devices

Abstract:This article presents the experimental characterization of SiC MOSFETs exposed to heavy-ion irradiation. Different leakage paths related to the drain bias used during the tests are observed, suggesting different damage sites in the devices, which can be further verified through the post-irradiation measurements. TCAD simulations are utilized to explore the underlying failure mechanisms. Based on the evolution of the gate oxide field, it is shown that the damage first occurs in the middle of the JFET region, while gradually spreads to the channel region with the increase of drain bias, but terminates at the source region. A preliminary model to roughly emulate the drain bias dependence of such degradation behaviors is developed, and the simulation results match the experiments well. Additionally, the emission microscope (EMMI) is carried out so as to detect the latent damage at the die level. The findings in this article demonstrate that more attention should be paid to the damaged gate oxide induced by the heavy-ion strike before SiC MOSFETs could act as a drop-in replacement of Si-based counterparts in avionic applications.

engineering, electrical & electronic,physics, applied
Gate Oxide Punching Thru Mechanism in Plasma Dry Etching

Zhang Qing

2008-01-01

Abstract:The punching thru mechanism of gate oxide (thickness about 15A) was investi- gated. Because of the thin thickness of gate oxide, gate oxide punching thru may easily happen during the plasma process. It was found that what caused the punching thru was not only the selectivity of poly-silicon/oxide but also the pattern topography. We used the basic SRAM pattern to check this topography effect, and found that gate oxide located at the narrow spacing of two parallel serpentine lines was the most easily punched thru. What caused the topography effect was the starvation of oxygen in these places which were induced by the residue of poly-silicon and enhanced by electron shading effect. So, to solve the issue of gate oxide punching thru, firstly the selectivity should be enough, secondly we should pay attention to the etching pattern topography.
Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

C. D. Liang,R. Ma,Y. Su,A. O'Hara,E. X. Zhang,M. L. Alles,P. Wang,S. E. Zhao,S. T. Pantelides,S. J. Koester,R. D. Schrimpf,D. M. Fleetwood

DOI: https://doi.org/10.1109/tns.2018.2828080

IF: 1.703

2018-01-01

IEEE Transactions on Nuclear Science

Abstract:We have evaluated radiation-induced charge trapping and low-frequency noise in passivated black phosphorus (BP) MOSFETs with HfO2 gate dielectrics. Thinning the gate dielectric reduces total ionizing dose-induced threshold voltage shifts. The defect-energy distribution estimated from lowfrequency noise measurements performed as a function of temperature decreases with increasing energy in as-processed devices. Local maxima in noise magnitude are observed in irradiated devices at activation energies of similar to 0.2 and similar to 0.5 eV. Larger defectrelated peaks in noise magnitude in the range of 0.35-0.5 eV are observed after biased post-irradiation annealing, and/or vacuum storage of the devices after irradiation and annealing. Density functional theory calculations strongly support significant roles for O vacancies in HfO2 and H+ transport and reactions near the BP/HfO2 interface in the observed radiation response and low-frequency noise.
Correlation Between Gate Induced Drain Leakage and Plasma Induced Interface Traps

Ma Siguang,Zhang Yaohui,Li M. F.,Li Weidan,Wang J. L. F.,Yen Andrew C.,Sheng George T. T.

DOI: https://doi.org/10.1557/proc-592-117

1999-01-01

MRS Proceedings

Abstract:In this paper we carefully investigate the correlation between gate induced drain leakage current and plasma induced damages in the deep submicron p + polysilicon gate pMOSFETs with gate oxide thickness of 50 Å. Low field enhancement of gate induced drain leakage current caused by plasma charging damage is a function of metal l antenna area/length ratio and cell location. Combined with the charge pumping measurements, it is found that gate induced drain leakage current enhancement is mainly due to the plasma induced interface traps. A linear relationship between the gate induced drain leakage and the plasma induced interface trap density is observed within the experimental error. On the other hand, the threshold voltage measurements show that oxide trapped charge has no major contribution to, and no correlation with, the gate induced drain leakage current for thin gate oxide MOSFET devices.
High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Rui Zhang

2015-01-01

Abstract:Introduction It has been increasingly difficult to further improve the performance of Si MOSFETs by conventional device scaling down . Therefore, the employment of high mobility channel materials has been considered as one of the most promising solutions to enhance the CMOS devices performance . Ge has been attracting a lot of interest as the channel material for MOSFETs, due to its much higher mobility for both hole and electron compared with those in Si . Although high mobility Ge MOSFETs has been realized by using the thick GeO2/Ge gate stacks , EOT scaling using high-k dielectrics is mandatory to realize high performance Ge MOSFETs. However, it has been found that the mobility is severely decreased in thin EOT high-k/Ge MOSFETs, attributable to the degradation of Ge MOS interface qualities. Thus, the formation of advanced Ge gate stacks with both ultrathin EOT and good interface qualities (low Dit) is the critical issue to obtain superior Ge MOSFETs. In this research, we demonstrate a plasma post oxidation (PPO) technique to oxidize the Ge surface by using oxygen plasma exposure to ALD high-k/Ge structures. Here the high-k layer serves as the oxygen barrier to prevent the growth of unnecessarily thick GeOx interfacial layer (IL), as well as the protection layer to eliminate any damage to the ultrathin GeOx/Ge interface after its formation. As a result, the high-k/GeOx/Ge gate stacks have been formed with sub-nm EOT and low Dit simultaneously. The high mobility Ge MOSFETs have also been realized by using these gate stack structures.
Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Wong Hei,Dong Shurong,Chen Zehua

DOI: https://doi.org/10.1007/s11432-020-3197-8

2021-01-01

Science China Information Sciences

Abstract:Dear editor, We have conducted experiments by directly applying trans-mission line pulse(TLP)on MOS devices and revealed that non-fatal electrostatic discharge(ESD)strikes can lead to some long-term reliability issues of the MOS circuits.More interestingly,although gate oxide is considered to be more fragile on an ESD strike and the breakdown voltage of gate oxide is used to define the ESD design window,the non-fatal TLP pulsing on the gate terminal has less effect.Whereas drain TLP strike leads to more pronounced threshold volt-age degradation as a result of hot carrier injection near the drain region.
Plasma induced charging damage: From appropriate MOS test structures to antenna design rules, a comprehensive process qualification procedure

Andreas Martin

DOI: https://doi.org/10.1109/iirw49815.2020.9312854

2020-10-01

Abstract:The characterization and assessment of plasma processing induced damage as part of a process qualification is a complex task. And its completeness is of vital importance since the antenna design rules are a direct result from the characterization. For MOS transistors plasma charging can degrade various MOS transistor parameters significantly. Such degradation can cause reliability risks or yield loss for products. For a comprehensive qualification procedure a reliability stress must be performed to reveal any hidden damage. From antenna test structures to data analysis, a full picture is drawn in this work, in order to establish meaningful antenna design rules.
Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors

Michael Geiger,Marion Hagel,Thomas Reindl,Jürgen Weis,R Thomas Weitz,Helena Solodenko,Guido Schmitz,Ute Zschieschang,Hagen Klauk,Rachana Acharya

DOI: https://doi.org/10.1038/s41598-021-85517-7

2021-03-18

Abstract:A critical requirement for the application of organic thin-film transistors (TFTs) in mobile or wearable applications is low-voltage operation, which can be achieved by employing ultrathin, high-capacitance gate dielectrics. One option is a hybrid dielectric composed of a thin film of aluminum oxide and a molecular self-assembled monolayer in which the aluminum oxide is formed by exposure of the surface of the aluminum gate electrode to a radio-frequency-generated oxygen plasma. This work investigates how the properties of such dielectrics are affected by the plasma power and the duration of the plasma exposure. For various combinations of plasma power and duration, the thickness and the capacitance of the dielectrics, the leakage-current density through the dielectrics, and the current-voltage characteristics of organic TFTs in which these dielectrics serve as the gate insulator have been evaluated. The influence of the plasma parameters on the surface properties of the dielectrics, the thin-film morphology of the vacuum-deposited organic-semiconductor films, and the resulting TFT characteristics has also been investigated.
Plasma induced charging damage causing MOS device reliability lifetime degradation originating from well charging of a technology with deep trench isolation

Andreas Martin,Johannes Berger,Angelika Kamp,Lukas Valdman,Anja Lehner,Sergii Mykytenko,Heiko Nielen

DOI: https://doi.org/10.1109/tdmr.2023.3268236

IF: 1.886

2023-01-01

IEEE Transactions on Device and Materials Reliability

Abstract:Well charging from plasma processing induced charging damage (PID) is an important reliability failure mechanism, which is present for technologies with isolated well areas. It requires a comprehensive PID qualification during technology development for a solid definition of well charging antenna rules in the design manual, which can guarantee a robust product design. A literature review on the well charging topic indicates a lot of characterization work on technologies with triple well or deep n-well. In this work a process node with a 7.5 nm gate oxide and deep trench isolation is investigated. It is found out that the well charging causes a MOS transistor parameter drift and no increased gate oxide leakage currents, which were reported in most earlier investigations. The findings of this work are based on PMOS and NMOS test structures with various well areas and antenna sizes and three reliability stress methods, constant current gate oxide stress, hot carrier stress and negative bias temperature instability stress. The most significant conclusion is that the MOS transistor lifetime clearly decreases with increasing antenna area and/or with increasing well size, which was verified by all three different reliability stress types.

engineering, electrical & electronic,physics, applied
Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Shea-Jue Wang,Mu-Chun Wang,Win-Der Lee,Jie-Min Yang,L. S. Huang,Heng-Sheng Huang

DOI: https://doi.org/10.1109/tps.2014.2349005

IF: 1.368

2014-01-01

IEEE Transactions on Plasma Science

Abstract:Choosing a plasma nitridation treatment with some annealing technique incorporated into the gate engineering is helpful to fix the existence of oxygen vacancy and promote the crystallization temperature in high-k dielectric. Here is the higher annealing atmosphere as a whole providing the better drive current in p-channel metal-oxide-semiconductor field-effect transistors, compared with the lower one. The interface traps for the former, however, is slightly greater than the latter, causing a higher gate leakage in the middle electrical field operated at inversion mode. This phenomenon is more obvious in the tested short-channel device. A sandwich type of HfOx/ZrOy/HfOx as gate dielectric at 28 nm node process is a fine selection to withstand or decrease the possibility of the formation of micro- or nanocrystallization increasing the gate leakage.
Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation

Xiaowen Liang,Haonan Feng,Yutang Xiang,Jing Sun,Ying Wei,Dan Zhang,Yudong Li,Jie Feng,Xuefeng Yu,Qi Guo

DOI: https://doi.org/10.3390/electronics12132886

IF: 2.9

2023-01-01

Electronics

Abstract:This work presents an experimental study of heavy-ion irradiation with different particle linear energy transfer (LET), gate biases, and drain biases. The results reveal that when the irradiation biases are low, the SiC MOSFET does not experience single event effect (SEE) and the electrical properties remain unchanged (the devices are in the safe operating area (SOA)). However, the oxide breakdown voltage of the device is significantly decreased due to the latent damage generated by the irradiation. The experimental results, along with TCAD simulations, suggest that the latent damage induced by the irradiation in the gate oxide is closely related to the peak electric field in the gate oxide at the time of particle incidence. This peak electric field is determined by the potential difference between the two sides of the gate oxide, which is affected by the particle LET, gate biases, and drain biases together. The high potential is determined by the combined effect of the LET and the drain-source voltage. The impact ionization of the particle by the applied electric field causes the accumulation of holes in the JFET oxide, which leads to a decrease in the doping of the N− epitaxial layer and eventually causes a rise in the high potential near the JFET oxide. The low potential is determined by the gate bias, and the negative bias applied to the gate can further increase the potential difference between the two sides of the oxide, causing an increase in the peak electric field in the gate oxide and aggravating the gate oxide damage.
Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics

Yandong He,Mingzhen Xu,Changhua Tan

DOI: https://doi.org/10.1016/j.sse.2004.06.013

IF: 1.916

2005-01-01

Solid-State Electronics

Abstract:The gate leakage current and reliability concern become more serious due to the aggressive scaling-down of the gate oxide thickness. In this paper, the gate leakage current reduction and reliability optimization with an EOT 15A plasma nitrided gate oxide were explored. The plasma nitrided oxide fabricated by plasma nitridation process demonstrated good gate leakage reduction and high carrier mobility without sacrificing the reliability performance. The optimization of nitrogen profile and post nitridation annealing has been also discussed.
Deep Understanding of Oxide Defects for Stochastic Charging in Nanoscale MOSFETs

Yingxin Qiu,Runsheng Wang,Jingwei Ji,Ru Huang

DOI: https://doi.org/10.1109/snw.2014.7348569

2014-01-01

Abstract:In nanoscale devices, trapping and de-trapping of single carrier charge caused by few defects in ultrathin gate dielectrics can affect the drain current significantly [1-4]. The oxygen vacancy in gate oxides is mostly considered as the criminal defect [1]. Recently, the stochastic charge trapping or dynamic behaviors (charging and discharging) of defect and its frequency dependence have been paid much attention with experiments [1-6]. The concept of metastable states of defect has been proposed for explaining its complete dynamics [1,5-9]. However, the atomistic origin of the stochastic single-charge trapping behavior and the missing metastable states are still not clear. In this paper, the stochastic defect transitions in SiO 2 and HfO 2 gate dielectrics are investigated by using ab-initio simulation of atomistic defect model, and the possible metastable defect states are directly obtained from climbing nudged elastic band simulation.
Recent Progress in Understanding the Instability and Defects in Gate Dielectrics

J. F. Zhang,M. H. Chang,Z. Ji,W. D. Zhang

DOI: https://doi.org/10.1109/icsict.2008.4734618

2008-01-01

Abstract:This work gives a review of the recent progress in understanding the instability and defects in gate dielectrics. It consists of two parts: electron-trapping for nMOSFETs and positive charging for pMOSFETs. On electron traps, the issues addressed include the relation between conduction mechanism and trap-filling, the capture cross section, location and sensitivity to fabrication techniques. On positive charging, a framework is proposed for the defect and the unique impact of each type of defect on device performance will be shown. Finally, the progress in NBTI measurement will be highlighted.
Enhanced Quality of Al2O3/SiC Gate Stack Via Microwave Plasma Annealing

Nan-Nan You,Xin-Yu Liu,Qian Zhang,Zhen Wang,Jia-Yi Wang,Yang Xu,Xiu-Yan Li,Yu-Zheng Guo,Sheng-Kai Wang

DOI: https://doi.org/10.1007/s12598-024-02781-y

IF: 6.318

2024-01-01

Rare Metals

Abstract:The high-quality gate dielectric on silicon carbide (SiC) surface is critical to fabricate high-performance SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). This research employs microwave plasma annealing (MPA) to obtain high-quality Al2O3/SiC gate stacks. By designing MPA atmosphere and optimizing the plasma power, the SiC MOS capacitor with a Al2O3 dielectric film shows the enhanced performance. The interface state density is reduced by 1 order of magnitude to 6 × 1011 cm−2·eV−1, the breakdown electric field is increased, and the voltage shift is effectively suppressed. Besides, the mechanism of MPA process is discussed in terms of the thermal effect and reactant species. X-ray photoelectron spectroscopy (XPS) results unveil oxygen plasma plays the main role. Optimal plasma power during the MPA process results in defect repairs of the first-neighbor Al–O bonding and partial removal of Al–O–H bond from the interface region. This study demonstrates that MPA process is an effective option to realize high-quality dielectric and interface on SiC.

Mechanism of Plasma Charging Damage on Ultrathin Gate Oxide

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Nondestructive Dciv Method to Evaluate Plasma Charging Damage in Ultrathin Gate Oxides

Increased hole trapping in gate oxides as latent damage from plasma charging

Gate-induced Drain Leakage Current Enhanced by Plasma Charging Damage

Sensitivity and limitations of plasma charging damage measurements using MOS capacitors structures

Gate Oxide Damage of SiC MOSFETs Induced by Heavy-Ion Strike

Gate Oxide Punching Thru Mechanism in Plasma Dry Etching

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs with HfO2 Gate Dielectrics

Correlation Between Gate Induced Drain Leakage and Plasma Induced Interface Traps

High Mobility Ge CMOS Devices with Ultrathin EOT Gate Stacks Fabricated by Plasma Post Oxidation

Effects of Non-Fatal Electrostatic Discharge on the Threshold Voltage Degradation in Nano CMOS Devices

Plasma induced charging damage: From appropriate MOS test structures to antenna design rules, a comprehensive process qualification procedure

Optimizing the plasma oxidation of aluminum gate electrodes for ultrathin gate oxides in organic transistors

Plasma induced charging damage causing MOS device reliability lifetime degradation originating from well charging of a technology with deep trench isolation

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Oxide Electric Field-Induced Degradation of SiC MOSFET for Heavy-Ion Irradiation

Effects of plasma nitridation on ultra-thin gate oxide electrical and reliability characteristics

Deep Understanding of Oxide Defects for Stochastic Charging in Nanoscale MOSFETs

Recent Progress in Understanding the Instability and Defects in Gate Dielectrics

Enhanced Quality of Al2O3/SiC Gate Stack Via Microwave Plasma Annealing