Abstract:We report the effect of the gate recess process and the surface of as-etched GaN on the gate oxide quality and first reveal the correlation between border traps and exposed surface properties in normally-off Al2O3/GaN MOSFET. The inductively coupled plasma (ICP) dry etching gate recess with large damage presents a rough and active surface that is prone to form detrimental GaxO validated by atomic force microscopy and X-ray photoelectron spectroscopy. Lower drain current noise spectral density of the 1/f form and less dispersive ac transconductance are observed in GaN MOSFETs fabricated with oxygen assisted wet etching compared with devices based on ICP dry etching. One decade lower density of border traps is extracted in devices with wet etching according to the carrier number fluctuation model, which is consistent with the result from the ac transconductance method. Both methods show that the density of border traps is skewed towards the interface, indicating that GaxO is of higher trap density than the bulk gate oxide. GaxO located close to the interface is the major location of border traps. The damage-free oxidation assisted wet etching gate recess technique presents a relatively smooth and stable surface, resulting in lower border trap density, which would lead to better MOS channel quality and improved device reliability.

Increased hole trapping in gate oxides as latent damage from plasma charging

Plasma induced charging damage causing MOS device reliability lifetime degradation originating from well charging of a technology with deep trench isolation

Gate-induced Drain Leakage Current Enhanced by Plasma Charging Damage

Correlation Between Gate Induced Drain Leakage and Plasma Induced Interface Traps

Mechanism of Plasma Charging Damage on Ultrathin Gate Oxide

Charge Buildup and Spatial Distribution of Interface Traps in 65 nm pMOSFETs Irradiated to Ultra-high Doses

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Hydrogen Induced and Plasma Charging Enhanced Positive Charge Generation in Gate Oxides

Nondestructive Dciv Method to Evaluate Plasma Charging Damage in Ultrathin Gate Oxides

Charge trapping effects in gate oxide under Fowler-Nordheim electron injection at temperature of 77K

Charge Trapping in Thin Gate Oxides of Nmosfets at 77 K During Uniform Fowler-Nordheim Electron Injection

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Correlation Between Border Traps and Exposed Surface Properties in Gate Recessed Normally-off Al2O3/GaN MOSFET

Plasma induced charging damage: From appropriate MOS test structures to antenna design rules, a comprehensive process qualification procedure

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Gate Oxide Punching Thru Mechanism in Plasma Dry Etching

Study of gate-induced drain leakage (GIDL) effects in thin gate oxynitride NMONSFET's

Sensitivity and limitations of plasma charging damage measurements using MOS capacitors structures

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs.