Abstract:The incorporation of two-dimensional (2D) semiconductors into future electronic devices will require electronic-grade, large-scale, and cost-effective means of doping and chemical control over the electronic properties of the utilized materials. In general, the approaches currently employed in the semiconductor industry may prove ineffective or inefficient in the nanofabrication of devices based on large-scale synthetic 2D monolayers. Some reasons for this include low interaction cross-sections with ion beams and the local variability in doping level of as-synthesized 2D materials. Plasma processing has emerged in recent years as a promising candidate to enable this large-scale modification of 2D materials in a time-efficient and cost-effective manner. However, challenges remain in fine-tuning of the chemical functionalization of 2D materials, such that they can act as reliable building blocks for monolithic components in future, low-dimensional circuitry capable of rivaling integrated complementary metal–oxide–semiconductor (CMOS) solutions based on bulk silicon. In this Review, we discuss recent progress in understanding of the chemical and physical etching processes that occur when 2D semiconductors are exposed to reactive plasma. We overview aspects of mobility engineering and doping control in 2D field-effect transistors (FETs) treated with plasma, with a particular focus on contact and gate dielectric interfaces. We also discuss functional devices, such as photodetectors and energy harvesters, based on plasma-activated 2D materials and summarize the operational parameters encountered in the literature for the successful tuning of 2D semiconductor properties with different types of plasma.

Plasma induced charging damage: From appropriate MOS test structures to antenna design rules, a comprehensive process qualification procedure

Plasma induced charging damage causing MOS device reliability lifetime degradation originating from well charging of a technology with deep trench isolation

A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs

Sensitivity and limitations of plasma charging damage measurements using MOS capacitors structures

Increased hole trapping in gate oxides as latent damage from plasma charging

Radiation Characteristics of Dipole Antenna in a Grounded Composite Magnetized Semiconductor Plasma

Mechanism of Plasma Charging Damage on Ultrathin Gate Oxide

Gate-induced Drain Leakage Current Enhanced by Plasma Charging Damage

Nondestructive Dciv Method to Evaluate Plasma Charging Damage in Ultrathin Gate Oxides

Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

Plasma spatial distribution manipulation and electrical property enhancement through plasma coupling effect

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Plasma Treatment of Ultrathin Layered Semiconductors for Electronic Device Applications

Investigation of Air Breakdown and Plasma Evolution on Microstrip Antenna Surface Using the Particle-in-cell Method

Prototyping The Apparatus Of The Atmospheric Pressure Plasma Processing For The Damage Free Surface

Applying the plasma physical sputtering process to SRF cavity treatment: Simulation and Experiment Study

Specialized design for three basic mask patterns counteract charging effects during plasma etching

Air plasma key parameters for electromagnetic wave propagation at and out of thermal equilibrium: applications to electromagnetic compatibility

Principles and Design of a Plasma Antenna

Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar

Surface Modification Of Porous Low-K Material By Plasma Treatment And Its Application On Reducing The Damage From Sputtering And Cmp Process