Surface Modification Of Porous Low-K Material By Plasma Treatment And Its Application On Reducing The Damage From Sputtering And Cmp Process

Hai-Sheng Lu,Knut Gottfried,Nicole Ahner,Stefan Schulz,Xin-Ping Qu
DOI: https://doi.org/10.1109/IITC.2011.5940315
2011-01-01
Abstract:The influence of CH4, H-2, NH3 and He plasma on the properties of porous low-k material is studied. It is found that the H-2, He, NH3 plasma can cause huge carbon depletion in the porous low-k material, and change the low-k surface from hydrophobic to hydrophilic, which will induce moisture uptake into the low-k material during the CMP process, and results in the increase of the k value and leakage current. The CH4 plasma can make low-k material more resist against moisture uptake and keep the k value and leakage current of low-k films stable.
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