Investigation of CH4, NH3, H2 and He plasma treatment on porous low-k films and its effects on resisting moisture absorption and ions penetration

Hai-Sheng Lu,Knut Gottfried,Nicole Ahner,Stefan Schulz,Xin-Ping Qu
DOI: https://doi.org/10.1016/j.mee.2012.12.025
IF: 2.3
2013-01-01
Microelectronic Engineering
Abstract:After the H2, NH3 and He plasma treatments, the leakage current density of the low-k samples are all increased. After dipping into the CMP slurry, the leakage current density increases further. While for the sample after the CH4 plasma treatment, the leakage current density is almost the same as that of the original sample, and is still stable after dipping into the CMP slurry. Our experimental results reveal that CH4 plasma treatment can make low-k film more resistant against the moisture uptake and keep the electrical property of the low-k films stable.
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