A Non-Destructive, Fast Evaluation of PVD Diffusion Barriers Deposited on Porous Low-K Dielectrics

Yingjie Wang,Peng He,Jing Zhang,Jiang Yan,Dmitry V. Lopaev,Xin-Ping Qu,Mikhail R. Baklanov
DOI: https://doi.org/10.1016/j.mee.2018.06.006
IF: 2.3
2018-01-01
Microelectronic Engineering
Abstract:Non-destructive and fast evaluation of thin diffusion barriers deposited on top of porous low-k dielectrics by spectroscopic ellipsometry is demonstrated. Studying Physical Vapor Deposited (PVD) CoTa and CoW alloys has shown that 3 nm and 5 nm thick barriers still have holes sufficient for penetration of neutral molecules. This study also detected damage to OSG low-k films which occurs during barrier deposition. VUV light emitted by Ar plasma which is used for metal target sputtering is likely to have caused this damage. For this reason, low-k films were placed under the barriers in order to adsorb moisture during air storage. W atoms also penetrated pores of low-k film during the deposition phase.
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