Challenges in scaling of IPVD deposited Ta barriers on OSG low‐k films: Carbonization of Ta by CHx radicals generated through VUV‐induced decomposition of carbon‐containing groups
Alexey N. Ryabinkin,Alexey S. Vishnevskiy,Sergej Naumov,Alexander O. Serov,Konstantin I. Maslakov,Dmitry S. Seregin,Dmitry A. Vorotyntsev,Alexander F. Pal,Tatyana V. Rakhimova,Konstantin A. Vorotilov,Mikhail R. Baklanov
DOI: https://doi.org/10.1002/ppap.202300206
IF: 3.877
2024-01-24
Plasma Processes and Polymers
Abstract:The effects of vacuum ultraviolet (VUV) radiation in the ionized physical vapor deposition (IPVD) of tantalum barrier layers on porous low‐k SiCOH films are investigated. The VUV photons break the Si–C bonds and release hydrocarbon radicals, which react with the deposited Ta to form TaCx and are trapped in the tantalum‐sealed pores and redeposited as CHx polymers on the pore surfaces. This poses a significant challenge to barrier thickness scaling in BEOL technology. The effect of vacuum ultraviolet (VUV) radiation during ionized physical vapor deposition (IPVD) of tantalum barriers on various porous organosilicate glass low‐k SiCOH films is studied using advanced diagnostics and quantum chemical calculations. VUV photons break the Si–C bonds, releasing hydrocarbon radicals from the pore surfaces. These radicals, trapped in pores that are partially sealed by tantalum deposition, can either react with tantalum to form carbide‐like compounds, TaCx, or be redeposited in the pores as CHx polymers. This is evidenced by a decrease in CH3 groups that correlates with an increase in TaCx. The formation of TaCx poses a significant challenge in the back end of line (BEOL) technology when reducing the barrier thickness.
physics, condensed matter, applied, fluids & plasmas,polymer science