Abstract:The characteristics of embedded pulse plasma using 60 MHz radio frequency as the source power and 2 MHz radio frequency as the bias power were investigated for the etching of SiO2 masked with an amorphous carbon layer (ACL) using an Ar/C4F8/O2 gas mixture. Especially, the effects of the different pulse duty ratio of the embedded dual-frequency pulsing between source power and bias power on the characteristics on the plasma and SiO2 etching were investigated. The experiment was conducted by varying the source duty percentage from 90 to 30% while bias duty percentage was fixed at 50%. Among the different duty ratios, the source duty percentage of 60% with the bias duty percentage of 50% exhibited the best results in terms of etch profile and etch selectivity. The change of the etch characteristics by varying the duty ratios between the source power and bias power was believed to be related to the different characteristics of gas dissociation, fluorocarbon passivation, and ion bombardment observed during the different source/bias pulse on/off combinations. In addition, the instantaneous high electron temperature peak observed during each initiation of the source pulse-on period appeared to affect the etch characteristics by significant gas dissociation. The optimum point for the SiO2 etching with the source/bias pulsed dual-frequency capacitively coupled plasma system was obtained by avoiding this instant high electron temperature peak while both the source power and bias power were pulsed almost together, therefore, by an embedded RF pulsing.

Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar

Isotropic Etch for SiO2 Microcantilever Release with ICP System

High energy electrons induced by nonlinear effect in synchronized dual-level radio frequency pulsing capacitively coupled plasmas

Simulation of SiO<sub>2</sub> etching in an inductively coupled CF<sub>4</sub> plasma

Synchrotron-Radiation-Excited Etching Of Silicon Wafer Enhanced By Disk-Shaped Cf4 Plasma

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Simulation of SiO2 etching in an inductively coupled CF4 plasma

Elimination of suction effect in interfacing microchip electrophoresis with inductively coupled plasma mass spectrometry using porous monolithic plugs.

Charging of dielectric substrate materials during plasma immersion ion implantation

Low-damage etching of poly-Si and SiO 2 via a low-energy electron beam in inductively coupled CF 4 plasma

Sub-damage-threshold plasma etching and profile tailoring of Si through laser-stimulated thermal desorption

Effect of Embedded RF Pulsing for Selective Etching of SiO2 in the Dual-Frequency Capacitive Coupled Plasmas.

Electron dynamics and SiO2 etching profile evolution in capacitive Ar/CHF3 discharges driven by sawtooth-tailored voltage waveforms

Plasma Induced Damage Reduction of Ultra Low-k Dielectric by Using Source Pulsed Plasma Etching for Next BEOL Interconnect Manufacturing

Potential Sensing Application of Oxygen Gas with Charge Plasma Based Negative Capacitance Tunnel FET

Cause of Etch Pits during the High Speed Plasma Etching of Silicon Carbide and an Approach to Reduce their Size

Novel charge neutralization techniques applicable to wide current range of FIB processing in FIB-SEM combined system

The Effect of Plasma Surface Activation Treatment on Capillary Flow Wettability of the Underfill Adhesive in the Standoff Gap of Si/Underfill/Si Bonded Structure in 3D ICs

A Miniaturized ECR Plasma Flood Gun for Wafer Charge Neutralization.

Experimental Study of SiO2 Sputter Etching Process in 13.56 MHz Rf-Biased Inductively Coupled Plasma

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry