Abstract:The research is aimed to address issues of analysis and mitigation of high repetition rate effects in Dielectric Wakefield Accelerators, and more specifically, to study charging rate and charge distribution in a thin walled dielectric wakefield accelerator from a passing charge bunch and the physics of conductivity and discharge phenomena in dielectric materials useful for such accelerator applications. The issue is the role played by the beam halo and intense wakefields in charging of the dielectric, possibly leading to undesired deflection of charge bunches and degradation of the dielectric material. The detector that was developed is based on measurement of the complex electrical conductivity, which would appear as a transient phenomenon accompanying the passage of one or more charge bunches, by observing the change of complex admittance of a resonant microwave cavity that is fitted around the dielectric tubing. The detector also can detect permanent damage to the material. During initial stage of development, microwave apparatus was built and signal processing was developed for observing time-dependent electronic charging of dielectric surfaces and/or plasmas located on or near the inner surface of a thin-wall hollow dielectric tube. Three frequencies were employed to improve the data handling rate and the signal-to-noise. The test and performance results for a plasma test case will be presented; in particular, the performance of the test unit showed capability to detect small changes ~ 0.1% of a dielectric constant, which would correspond to the scraping-off of only 0.3nC to the walls of the dielectric liner inside the cavity from the passing charge bunch.

Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

Design of a High Precision Chip for Detecting Electric Arc

High-voltage Integrated Circuit Technology for Plasma Display Panel Drivers

Plasma induced charging damage causing MOS device reliability lifetime degradation originating from well charging of a technology with deep trench isolation

Design of a Scan Driver IC for Plasma Display Panel

On-Wafer FinFET-Based 3-D E-Beam Detector Cube for In Situ Monitoring of Advanced Lithography Processes Beyond 5 nm

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Endpoint Detection in High Density Plasma Etching System Based on IEP

Nondestructive Dciv Method to Evaluate Plasma Charging Damage in Ultrathin Gate Oxides

Diagnostic and Detectors for Charging and Damage of Dielectrics in High-gradient Accelerators

A Low-Cost High-Performance Voltage Sensing Circuit with Proactive Parameter Design Compensation Network for SiC MOSFETs.

High energy electrons induced by nonlinear effect in synchronized dual-level radio frequency pulsing capacitively coupled plasmas

Sensitivity and limitations of plasma charging damage measurements using MOS capacitors structures

Negative charge injection to a positively charged SiO2 hole exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma in CF4/Ar

Increased hole trapping in gate oxides as latent damage from plasma charging

A New Implementation Approach for Reliability Design Rules against Plasma Induced Charging Damage from Well Configurations of Complex ICs

Numerical characterization of dual-frequency capacitively coupled plasmas modulated by electron beam injection

Real-time monitoring of the plasma density distribution in low-pressure plasmas using a flat-cutoff array sensor

Design and 3D TCAD simulation of a novel floating-electrode silicon pixel detector

Gate-induced Drain Leakage Current Enhanced by Plasma Charging Damage

The segmented non-uniform dielectric module design for uniformity control of plasma profile in a capacitively coupled plasma chamber