Abstract:Electrons, which carry abundant information, can be used for the in situ monitoring of electron beam additive manufacturing, such as in the emerging electron optics method for monitoring surface morphology. In electron beam directed energy deposition (EB-DED), droplet transfer, which affects the stability and quality of the deposition, is a unique and critical process. In this study, we developed a dual-channel absorbed current monitoring method based on absorbed electrons for the in situ monitoring of droplet transfer in the EB-DED process, which differs from the common vision-based monitoring technology. The ability to identify different droplet transfer modes and parameter changes was verified through a series of experiments. The results show that this method exhibited prominent signal characteristics corresponding to typical droplet transfer modes in EB-DED, accurately identified the droplet transfer mode during part fabrication, and provided a clear criterion for identifying the stability of the deposition process. It also distinguished changes in the droplet transfer distance and wire-feeding speed via a quantitative analysis of the signal variation caused by the corresponding droplet behavior. We also analyzed and explained the generation mechanisms of the signal characteristics. The dual channel absorbed current monitoring method exhibited high reliability and efficiency during the in situ monitoring of the droplet transfer of EB-DED. The proposed method represents a new tool for information sensing in closed-loop control and facilitates the study of droplet transfer behavior in EB-DED.

Endpoint Detection in High Density Plasma Etching System Based on IEP

Endpoint Detection Based on Optical Method in Chemical Mechanical Polishing

In-situ end-point detection during ion-beam etching of multilayer dielectric gratings

Research on Multi-Method Endpoint Detection in Chemical Mechanical Planarization Process

Focused Ion Beam Assisted Interface Detection for Fabricating Functional Plasmonic Nanostructures

Real-Time Plasma Uniformity Monitoring via Selective Plasma Light Intensity Measurement Using Transparent-LCD-Module-Adapted Optical Emission Spectroscopy

A Junction-Level Optoelectronic Characterization of Etching-Induced Damage for Third-Generation HgCdTe Infrared Focal-Plane Array Photodetectors

Integrated Online Virtual Metrology and Fault Detection in Plasma Etch Tools

Wide range detector of plasma induced charging effect for advanced CMOS BEOL processes

Three-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher

Study of Plug Etch back process matching on faraday shielded ICP and traditional CCP plasma ETCH chambers

On-Wafer FinFET-Based 3-D E-Beam Detector Cube for In Situ Monitoring of Advanced Lithography Processes Beyond 5 nm

Data-driven plasma science based plasma etching process design in OLED mass production referring to PI-VM

Monitor of the Chamber Wall Condition in Plasma Etching Process by APM Sensor

An in Situ End-Point Detection System Using Motor Power Signal for Chemical Mechanical Planarization Process

Real-time monitoring of the plasma density distribution in low-pressure plasmas using a flat-cutoff array sensor

OES structural feature based fault detection method for plasma etching

Measurement of Plasma Etch-Induced Damage to Silicon Beneath Si0 2 Layer: Effective Range of Plasma Etch Damage Through Si0 2

Virtual Sensor Based Fault Detection and Classification on a Plasma Etch Reactor

Electric current evaluation for process monitoring in electron beam directed energy deposition

Two-Dimensional Discharge Simulation of Inductively Coupled Plasma Etcher