Abstract:Interface trapping is one of the most notorious effects that limit device performance in GaN-based MIS high electron mobility transistors (MISHEMTs). In this paper, we present a comprehensive study on interface traps in AlGaN/GaN MISHEMTs using low pressure chemical vapor deposition SiNx as gate dielectric. We combined the trapping analysis in MIS diodes and actual MISHEMTs to estimate the interface trap state densities (D-it) and their distributions in the device, and to investigate their influence on device electrical properties. Two types of interface traps with different emission time constants, designated as "slow" and "fast" traps, were identified and characterized by means of pulse-mode current-voltage measurements and a frequency dependent conductance method. It was found that "fast" traps located in the device access region could be effectively restrained by passivation using plasma enhanced chemical vapor deposition SiNx. However, "slow" traps, no matter whether located beneath the metal gate or in the access region, were less influenced by passivation. Due to the strong interference of traps in the access region, Dit extraction using the conventional conductance method was not accurate for the lateral GaN-based MIS diodes. A modified small-signal equivalent circuit that includes the impedance of traps in the access region is proposed. Proper passivation for the device access region is essential when using the conductance method for GaN-based MIS devices.

Correlation Between Gate Induced Drain Leakage and Plasma Induced Interface Traps

Gate-induced Drain Leakage Current Enhanced by Plasma Charging Damage

Correlation Between Border Traps and Exposed Surface Properties in Gate Recessed Normally-off Al2O3/GaN MOSFET

Increased hole trapping in gate oxides as latent damage from plasma charging

Study of gate-induced drain leakage (GIDL) effects in thin gate oxynitride NMONSFET's

Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs

Characterization of Gate Leakage and Reliability of Normally-OFF GaN MOSFET with LPCVD-SiN<sub><i>x</i></sub>/PEALD-AlN Dual Gate Dielectric and <i>In-Situ</i> H<sub>2</sub>(15%)/N<sub>2</sub>(85%) Plasma Pretreatment

Study of Interface Traps in AlGaN/GaN MISHEMTs Using LPCVD SiNx As Gate Dielectric

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Edge hole direct tunneling leakage in ultrathin gate oxide p-channel MOSFETs

Experimental Evidence of Interface-Trap-Related SILC in Ultrathin (4nm- and 2.5nm-Thick) n-MOSFET and p-MOSFET Under Hot-Carrier Stress

Correlating device behaviors with semiconductor lattice damage at MOS interface by comparing plasma-etching and regrown recessed-gate Al2O3/GaN MOS-FETs

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETs

Plasma induced charging damage causing MOS device reliability lifetime degradation originating from well charging of a technology with deep trench isolation

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Kink Effect for 28 Nm N-Channel Field-Effect Transistors after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Improving the reliability of MOS capacitor on 4H-SiC (0001) with phosphorus diffused polysilicon gate

Nondestructive Dciv Method to Evaluate Plasma Charging Damage in Ultrathin Gate Oxides