Abstract:In this article, the origin of severe drain–source current kink effect in $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ MOSFETs has been exploited by means of temperature-and pulse-dependent current–voltage ( $\textit{I}$ – $\textit{V}\text{)}$ analysis. By reducing the pulse biasing widths, whereby the self-heating effect was negligible, the output characteristics were free of kink but with a rather low drain–source current density ( $\textit{I}_{\text{\text{DS}}}\text{)}$ at a high drain voltage ( $\textit{V}_{\text{\text{DS}}}\text{)}$ of 30 V. The current kink effect started to occur with a direct-current power consumption of approximately 850 mW/mm. The elimination of kink features was also observed together with a large $\textit{I}_{\text{\text{DS}}}$ at elevated temperatures over 100 $^{\circ}$ C. These observations indicate that the kink effect is strongly related to thermal activation of incomplete ionized donors by either the self-heating effect or external intentional heating stress rather than high electric field. In terms of temperature-dependent current output characteristics, the thermal activation energy is determined to be 136 meV, which is consistent with the reported unintentional donors with a high activation energy of 110 meV. It implies that additional electrons are thermally activated and emitted from the incomplete ionized donors in $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ channel or buffer layers through the self-heating effect, contributing to the channel conductivity modulation and the consequent current kink effect. These findings may bridge the knowledge gap between charge transport mechanisms and the reliability degradation of $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ power switches.

Kink Effect for 28 Nm N-Channel Field-Effect Transistors after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Fringe Gate Leakage of 28nm HK/MG Nmosfets with Nitridation Treatments.

GIDL and gated-diode metrologies for 28nm HK/MG nMOSFETs in nitridation annealing temperatures

CLM effect for 28nm stacked HK nmosfets after DPN treatment with different annealing temperatures

Gate Leakage for 28 Nm Stacked HfZrO X Dielectric of P-Channel MOSFETs after Decoupled Plasma Nitridation Treatment with Annealing Temperatures

Early effect exposing performance of 28nm HK/MG pMOSFETs under PDA or DPN nitridation treatment

Early Effect for 28nm HK/MG PMOSFETs after Post Deposition Annealing Treatment

Trend of Subthreshold Swing with DPN Process for 28nm N/PMOSFETs

Electrical stress probing recovery efficiency of 28 nm HK/MG nMOSFETs using decoupled plasma nitridation treatment

Electrical Performance of 28 nm-Node Varying Channel-Width nMOSFETs under DPN Process Treatments

Current Kink Effect in Β-Ga2o3 MOSFETs Induced by Incomplete Ionization of Donors

Current Kink Effect in $\beta $ -Ga $_{\text{2}}$ O $_{\text{3}}$ MOSFETs Induced by Incomplete Ionization of Donors

Gate Leakage Characteristics for 28 Nm HfZrO<sub><italic>x</italic></sub> Pmosfets after DPN Process Treatment with Different Nitrogen Concentration

Uniformity of Gate Dielectric for I/O and Core HK/MG pMOSFETs with Nitridation Treatments

Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping

Decoupled tunneling and GIDL effects for 28nm high-k stacked nMOSFETs

Substrate Bias Effect of 28 Nm-Node HK/MG Nmosfets with DPN Temperature Treatments

Origin and suppression of kink effect in InP high electron mobility transistors at cryogenic temperatures

Q-Factor Performance of 28 Nm-Node High-K Gate Dielectric under DPN Treatment at Different Annealing Temperatures

Dit Extraction of Nano-node HK/MG Nmosfets Treated with DPN Process under Diverse Nitrogen Concentration

Amplification Gain of Nano-node Channel-width nMOSFETs with Thermal Annealing Treatments of DPN Processes