Abstract:Antimony chalcogenides are widely studied as a light-absorbing material due to their merits of low toxicity, efficient cost, and excellent photovoltaic properties. However, the band gaps of antimony selenide (approximately 1.1 eV) and antimony sulfide (approximately 1.7 eV) both deviate from the optimal detailed balance band gap (∼1.3 eV) for terrestrial single-junction solar cells. Notably, the band gap of Sb2(S, Se)3 can be tunable in the range from 1.1 to 1.7 eV, which can cover the detailed balance band gap. In this work, the vapor transport deposition method with two independent evaporation sources is used to deposit Sb2(S, Se)3 thin films. By carefully optimizing the evaporation temperature and the start evaporation time of the Sb2Se3 and Sb2S3 sources, a suitable band gap of 1.33 eV is obtained. Finally, on the basis of the optimal Sb2(S, Se)3 films, Sb2(S, Se)3 solar cells without a hole transport layer achieved an efficiency of 7.03%.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c10758.Saturated vapor pressure curves of Sb2Se3 and Sb2S3; temperature–time curves of Sb2Se3 and Sb2S3 sources; top-view SEM images at different Sb2Se3 and Sb2S3 source temperatures; XRD diffraction pattern under different Sb2Se3 and Sb2S3 source temperatures; transmission spectroscopy at different Sb2Se3 and Sb2S3 source temperatures; schematic diagram of thin-film light absorption; heating process of the uniform Sb2(S, Se)3 films and band gaps of Sb2(S, Se)3 films; 1/C2–V curves of the devices; band gaps of the devices obtained from EQE data; J–V curves under different light intensities; atomic and ionic radii; material parameters for SCAPS simulations; CdS trap state parameters for SCAPS simulations; and Sb2(S, Se)3 trap state parameters (PDF)This article has not yet been cited by other publications.

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