Abstract:The Schockley–Quisser (SQ) limit of 28.64% is distant from the Sb 2 S 3 solar cells' record power conversion efficiency ( PCE ), which is 8.00%. Such poor efficiency is mostly owing to substantial interface-induced recombination losses caused by defects at the interfaces and misaligned energy levels. The endeavor of this study is to investigate an efficient Sb 2 S 3 solar cell structure via accurate analytical modeling. The proposed model considers different recombination mechanisms such as non-radiative recombination, Sb 2 S 3 /CdS interface recombination, Auger, SRH, tunneling-enhanced recombination, and their combined impact on solar cell performance. This model is verified against experimental work (Glass/ITO/CdS/Sb 2 S 3 /Au) where a good coincidence is achieved. Several parameters effects such as thickness, doping, electronic affinity, and bandgap are scrutinized. The effect of both bulk traps located in CdS and Sb 2 S 3 on the electrical outputs of the solar cell is analyzed thoroughly. Besides, a deep insight into the effect of interfacial traps on solar cell figures of merits is gained through shedding light into their relation with carriers' minority lifetime, diffusion length, and surface recombination velocity. Our research findings illuminate that the primary contributors to Sb 2 S 3 degradation are interfacial traps and series resistance. Furthermore, achieving optimal band alignment by fine-tuning the electron affinity of CdS to create a Spike-like conformation is crucial for enhancing the immunity of the device versus the interfacial traps. In our study, the optimized solar cell configuration (Glass/ITO/CdS/Sb 2 S 3 /Au) demonstrates remarkable performance, including a high short-circuit current ( J SC ) of 47.9 mA/cm 2 , an open-circuit voltage ( V OC ) of 1.16 V, a fill factor ( FF ) of 54%, and a notable improvement in conversion efficiency by approximately 30% compared to conventional solar cells. Beyond its superior performance, the optimized Sb 2 S 3 solar cell also exhibits enhanced reliability in mitigating interfacial traps at the CdS/Sb 2 S 3 junction. This improved reliability can be attributed to our precise control of band alignment and the fine-tuning of influencing parameters.

Electronic Properties, Screening and Efficient Carrier Transport in NaSbS2

Earth-abundant Photovoltaic Semiconductor NaSbS2 in the Rocksalt-Derived Structure: A First-Principles Study

NaSbSe2 As a Promising Light-Absorber Semiconductor in Solar Cells: First-principles Insights

Electronic and optical properties of Sb 2 Se 3 and Sb 2 S 3 : theoretical investigations

Synthesis and Characterization of NaSbS 2 Thin Film for Potential Photodetector and Photovoltaic Application

n-Type Doping of Sb2S3 Light-Harvesting Films Enabling High-Efficiency Planar Heterojunction Solar Cells.

Photoexcited charge carrier dynamics in Sb2Se3(100)

Strong electron-phonon coupling and carrier self-trapping in Sb$_2$S$_3$

First-principles Study on Sb-doped SnS2 As a Low Cost and Non-Toxic Absorber for Intermediate Band Solar Cell

Influence of defects and dopants on the photovoltaic performance of Bi2S3: First-principles insights

Charge Transport and Defects in Sulfur-Deficient Chalcogenide Perovskite BaZrS$_3$

Assessing carrier mobility, dopability, and defect tolerance in the chalcogenide perovskite BaZrS$_3$

Interfacial Electronic and Defect Engineering Coupling of S-scheme CsSnBr3/SnSx (x = 1, 2) Heterostructures with Carrier Dynamics for Solar Cells

Factors Enabling Delocalized Charge-Carriers in Pnictogen-Based Solar Absorbers: In-depth Investigation into CuSbSe2

Engineering the charge extraction and trap states of Sb 2 S 3 solar cells

Scrutinizing transport phenomena and recombination mechanisms in thin film Sb2S3 solar cells

Electronic Structure, Defect Properties, and Optimization of the Band Gap of the Earth-Abundant and Low-Toxicity Photovoltaic Absorber Cu3SbS4.

Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination

Alkali Metals Doping for High-Performance Planar Heterojunction Sb2S3 Solar Cells

Complicated and Unconventional Defect Properties of the Quasi-One-Dimensional Photovoltaic Semiconductor Sb2Se3.

Enhanced charge carrier transport via efficient grain conduction mode for Sb2Se3 solar cell applications