High-efficient Sb 2 Se 3 solar cell using Zn x Cd 1- x S n-type layer

Chao Chen,Xinxing Liu,Kanghua Li,Shuaicheng Lu,Siyu Wang,Sen Li,Yue Lu,Jungang He,Jiajia Zheng,Xuetian Lin,Jiang Tang
DOI: https://doi.org/10.1063/5.0030430
IF: 4
2021-04-26
Applied Physics Letters
Abstract:Sb<sub>2</sub>Se<sub>3</sub> has drawn wide attention in thin-film solar cells in recent years because of its advantages of low-cost, low-toxic, and physicochemically stable properties. The most efficient Sb<sub>2</sub>Se<sub>3</sub> solar cells are based on a CdS/Sb<sub>2</sub>Se<sub>3</sub> heterojunction, but the cliff-like conduction band offset at the CdS/Sb<sub>2</sub>Se<sub>3</sub> interface causes detrimental interface recombination. In this Letter, we apply the Zn<sub><i>x</i></sub>Cd<sub>1-</sub><sub><i>x</i></sub>S to tune the interface band alignment. When <i>x</i> is equal to 0.163, the flatband results in an optimal efficiency of 7.02%, which is absolutely 0.6% higher than the control device with pure CdS.
physics, applied
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