Abstract:We demonstrate multi-wavelength light emission from InGaN nanowires (NWs) monolithically grown on pyramid-textured Si(100) substrates by plasma-assisted molecular beam epitaxy (MBE) under stationary conditions. Taking advantage of the highly unidirectional source material beam fluxes, the In content of the NWs is tuned on the different pyramid facets due to varied incidence angle. This is confirmed by distinct NW morphologies observed by scanning electron microscopy (SEM) and by energy-dispersive X-ray (EDX) element mapping. Photoluminescence and cathodoluminescence (CL) reveal multiple lines originating from InGaN NWs on the different pyramid facets. The anomalous temperature dependence of the emission wavelength results from carrier redistribution between localized or confined states, spontaneously formed within the NWs due to composition fluctuations, verified by high-resolution EDX elemental analysis. First-principles calculations show that the pyramid facet edges act as a barrier for atom migration and enhance atom incorporation. This leads to uniform composition within the facets for not too high a growth temperature, consistent with the SEM, EDX and CL results. At elevated temperature, InGaN decomposition and In desorption are enhanced on facets with low growth rate, accompanied by Ga inter-facet migration, leading to non-uniform composition over the Ga migration length which is deduced to be around 580 nm. Our study presents a method for the fabrication of multi-wavelength light sources by highly unidirectional MBE on textured Si substrates towards color temperature-tunable solid-state lighting and RGB light-emitting diode displays.

Phosphor-free White Emission from InGaN Quantum Wells Grown on in Situ Formed Submicron-Scale Multifaceted GaN Stripes

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

Monolithic semi-polar ($1ar{1}01$) InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy.

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Growth and Characterization of Phosphor-Free White Light-Emitting Diodes Based on InGaN Blue Quantum Wells and Green–yellow Quantum Dots

Selective Epitaxy of Ingan/Gan Multiple Quantum Wells on Gan Side Facets

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Multi-wavelength light emission from InGaN nanowires on pyramid-textured Si(100) substrate grown by stationary plasma-assisted molecular beam epitaxy

From powder to nanowire: A simple and environmentally friendly strategy for optical and electrical GaN nanowire films

Phosphor-free nanopyramid white light-emitting diodes grown on { 10 1 ¯ 1 } planes using nanospherical-lens photolithography

Multi-color broadband visible light source via three-dimensional GaN hexagonal annular microstructures

Phosphor-free nanopyramid white light-emitting diodes grown on {} planes using nanospherical-lens photolithography

Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

Growth and properties of blue and amber complex light emitting InGaN/GaN multi-quantum wells

Phosphor-Free Nanopyramid White Light-Emitting Diodes Grown On {10(1)Over-Bar1} Planes Using Nanospherical-Lens Photolithography