Abstract:Passive Q-switched operation of a LD-pumped Nd:YVO4 laser is studied with a saturable absorber GaAs as a passive Q-switched component and F-P output coupler. Q-switched pulses with pulse duration 47ns, pulse repetition rate 1183 kHz, pulse average power 430mW and beam quality M2=1.13 in a TEM00 mode were produced with Q-switched pumping threshold 1700mw. We performed numerical calculations of coupled wave equations for case of GaAs playing the role as mentioned above, discussing passive Q-switched mechanism and the dependency ofpulse duration and pulse repetition rate on pumping rate, which was well in agreement with the experiments' results. A brief and effective technique for compact Q-switched solid-state laser having multiple functions is provided.

Passively Mode-Locking Nd:Gd_05Y_05VO_4 Laser with an In_025Ga_075As Absorber Grown at Low Temperature

Passively Mode-Locking Nd : Gd0.5y0.5vo4 Laser With An In(0.25)Ga(0.75)Aa Absorber Grown At Low Temperature

LED-side-pumped Passively Q-switched Nd:GdVO4 Laser Without Active Temperature Control

High Efficiency Passively Q-switched Mode-Locking Nd:GdVO4 Laser with LT-In0.25Ga0.75As Saturable Absorber

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As As Output Coupler

Diode-End-Pumped Passively Cw Mode-Locked Nd : Ylf Laser by the Lt-In0.25ga0.75as Absorber

Comparison Between Two Kinds of Semiconductor Absorbers for Mode-Locking in Nd : Yvo4 Laser

2-Ps Passively Mode-Locked Nd : Yvo4 Laser Using an Output-Coupling-Type Semiconductor Saturable Absorber Mirror

4-ps passively mode-locked Nd:Gd_0.5Y_0.5VO4 laser with a semiconductor saturable-absorber mirror

Diode-pumped Passively Mode-Locked Nd:YVO4 Laser at 1342 Nm with Periodically Poled LiNbO3.

4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror.

Passively Mode-Locked Nd:Gd 0.1 Y 0.9 VO 4 Laser with a Semiconductor Saturable Absorber Mirror

Passively mode-locked Nd:Gd0.1Y0.9VO4 laser with a semiconductor saturable absorber mirror

Passively Mode-Locked Nd:YVO4 Laser Using Semiconductor Saturable Absorption Mirrors of Interface States Relaxation Region

Diode-pumped Passively Mode-Locked Nd:GYSGG Laser at 1061 Nm with Periodically Poled LiNbO3 Nonlinear Mirror

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Passive Q-switching of laser diode-pumped Nd:YVO4 laser with GaAs

Diode-Pumped Self-Starting Mode-Locked Nd:YVO 4 Laser with Semiconductor Saturable Absorber Output Coupler

Compact Passively Q-switched Green Laser with Periodically Poled MgO:LiNbO 3

A Diode Pumped Passively Mode-Locked Nd:CaGdAlO4laser

Passive Q-switched Operation of a LD-pumped Nd:YVO4 Laser with GaAs As a Passive Q-switched Component and Output Coupler