Passively Mode-Locking Nd : Gd0.5y0.5vo4 Laser With An In(0.25)Ga(0.75)Aa Absorber Grown At Low Temperature

Yong-Gang Wang,Xiao-Yu Ma,Ya-Xian Fan,Hui-Tian Wang
DOI: https://doi.org/10.1364/AO.44.004384
IF: 1.9
2005-01-01
Applied Optics
Abstract:We have demonstrated stable self-starting passive mode locking in a diode-end-pumped Nd:Gd-0.8-Y0.5VO4 laser by using an In0.25Ga0.75As absorber grown at low temperature (LT In0.25Ga0.75As absorber). An In0.25Ga0.75As single-quantum-well absorber, which was grown directly on the GaAs buffer by use of the metal-organic chemical-vapor deposition technique, acts simultaneously as a passive mode-locking device and as an output coupler. Continuous-wave mode-locked pulses were obtained at 1063.5 nm. We achieved a pulse duration of 2.6 ps and an average output power of 2.15 W at a repetition rate of 96.4 MHz. (c) 2005 Optical Society of America.
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