Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As As Output Coupler

Yonggang Wang,Xiaoyu Ma,Bingyuan Zhang,Meng Chen,Gang Li,Zhigang Zhang
DOI: https://doi.org/10.3969/j.issn.1674-4926.2004.12.010
2004-01-01
Chinese Journal of Semiconductors
Abstract:A novel InGaAs(LT-In0.25 Ga0.75 As) absorber grown by metal organic chemical vapor deposition at low temperature is presented.Using it as well as an output coupler,passive mode locking,which produces pulses as short as several hundred picoseconds for diode-end-pumped Nd∶YAG laser at 1.06μm,is realized.The pulse frequency is 150MHz.
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