Passively Mode Locked Diode-End-Pumped Yb∶YAB Laser with High Reflectivity Type Semiconductor Saturable Absorption Mirror

Yonggang Wang,Xiaoyu Ma,Yinghong Xue,Hong Sun,Zhigang Zhang,Qingyue WANG
DOI: https://doi.org/10.3969/j.issn.1674-4926.2005.02.006
2005-01-01
Chinese Journal of Semiconductors
Abstract:A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 3.05ps at 1.044μm.The pulse frequency is 375MHz;the output power is 45mW.
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