Passively Mode-Locked Nd:YVO4 Laser Using Semiconductor Saturable Absorption Mirrors of Interface States Relaxation Region

YongGang Wang,XiaoYu Ma,Yang Liu,LiQun Sun,Qian Tian
DOI: https://doi.org/10.1016/j.ijleo.2006.01.002
IF: 3.1
2006-01-01
Optik
Abstract:Semiconductor saturable absorber mirrors (SESAMs) with GaAs/air interface relaxation region have less non-saturable loss than those with low temperature grown In0.25Ga0.75As relaxation region. A thin layer of SiO2 and a high reflectivity film of Si/(SiO2/Si)4 were coated on the SESAMs, respectively in order to improve the SESAM's threshold for damage. The passively continuous wave mode-locked lasers with two such SESAMs were demonstrated, and the SESAM with high reflectivity film of Si/(SiO2/Si)4 is proved to be helpful for high output power.
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