High Efficiency Passively Q-switched Mode-Locking Nd:GdVO4 Laser with LT-In0.25Ga0.75As Saturable Absorber

S. D. Pan,L. N. Zhao,Y. Yuan,S. N. Zhu,J. L. He,Y. G. Wang
DOI: https://doi.org/10.1016/j.optmat.2009.01.004
IF: 3.754
2009-01-01
Optical Materials
Abstract:The generation of passively Q-switched mode-locking operation with 100% modulation depth has been observed from a diode-pumped Nd:GdVO4 laser with a low temperature In0.25Ga0.75As saturable absorber, which was grown by the metal–organic chemical–vapor deposition technique and acted as saturable absorber as well as output coupler. The repetition rate and pulse duration of the mode-locked pulses concentrated in the Q-switch envelop were 455MHz and 12ps, respectively. The average output power was 1.8W and the slope efficiency was 36%.
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