Abstract:Simultaneous passive Q-Switching and mode locking at low pump power was observed in a Laser Diode (LD) pumped Nd3+:YVO4-Cr4+:YAG laser, detailed studies were experimentally carried out. A fiber-coupled LD with maximum output power of 2 W is used as pump source. In a 50cm long cavity, the repetition rate of obtained mode-locking pulse train is about 300MHz, and the pulse duration was estimated to be at sub-nanosecond level. The repetition rate of the passive Q-Switched pulse train varies from 10kHz similar to 130kHz with the increasing of the pump power. It was found that the threshold of incident pump power to generate mode-lock in such a laser is dependent on the position of Cr4+:YAG crystal inside the cavity. Select proper Cr4+:YAG as saturable absorber and optimize its position, simultaneous Q-Switching and mode-locking occurred in the Nd3+:YVO4 laser at pump power as low as about 200 mW. The experimental result demonstrates the possibility of obtains ultra short optical pulse in a simple and low cost way, which is of great interest in some applications.

Passive Q-switching of laser diode-pumped Nd:YVO4 laser with GaAs

Passive Q-switched Operation of a LD-pumped Nd:YVO4 Laser with GaAs As a Passive Q-switched Component and Output Coupler

LED-side-pumped Passively Q-switched Nd:GdVO4 Laser Without Active Temperature Control

High Efficiency Passively Q-switched Mode-Locking Nd:GdVO4 Laser with LT-In0.25Ga0.75As Saturable Absorber

Compact Passively Q-switched Green Laser with Periodically Poled MgO:LiNbO 3

Study on the characteristics of Q-switching Nd : YVO4 laser with GaAs grown at low temperature

Passively Q-Switched Nd:Yvo4 Laser With A Cr4+:Yag Crystal Saturable Absorber

GaAs As a Passive Q-switch and Brewster Plate for Pulsed Yb:YAG Laser

Study On Simultaneous Passive Q-Switching And Mode-Locking At Low Pump Power In A Ld-Pumped Nd3+: Yvo4-Cr4+: Yag Laser

Passively Mode-Locking Nd:Gd_05Y_05VO_4 Laser with an In_025Ga_075As Absorber Grown at Low Temperature

Passively Mode-Locking Nd : Gd0.5y0.5vo4 Laser With An In(0.25)Ga(0.75)Aa Absorber Grown At Low Temperature

Co2+:LMA Crystal As Saturable Absorber for a Diode-Pumped Passively Q-switched Nd:YVO4 Laser at 1342 Nm

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As As Output Coupler

Analysis of a Laser-Diode End-Pumped Passively Q-switched Nd:GdVO 4 Laser with V 3+ :YAG Saturable Absorber

Passively Q-Switched Ho :YAG Ceramic Laser with a GaAs Saturable Absorber

Passively Q-switched 1.32-Μm Nd:YAG Laser with a V:YAG Saturable Absorber

An LD-pumped Q-switched Nd:YAG Laser Using La 3 Ga 5 SiO 14 for the Electro-Optic Modulator and Optical Activity Compensation

Passively Q-Switched Diode-Pumped Nd : Yvo4/Cr4+: Yag Single-Frequency Microchip Laser

Experimental Investigation of Diode Pumped Double Q-switched Nd3+: YAG Laser

The passive Q-switched and Q-switched mode-locked Nd: GYAP laser based on a novel Bi 2 O 3 saturable absorber

Diode-end-pumped Nd:YAG laser with Cr4+: YAG as passive Q-switch