Study on the characteristics of Q-switching Nd : YVO4 laser with GaAs grown at low temperature

Qichang Jiang,Zhuang Zhuo,Yonggang Wang,Jianping Li,Yanli Su,Xiaoyu Ma,Zhigang Zhang,Qingyue Wang
IF: 0.6
2006-01-01
ACTA PHOTONICA SINICA
Abstract:A diode-pumped passively Q-switched Nd : YVO4 laser was demonstrated by using GaAs film growing at a low temperature. The threshold power at the Q-switching is 2 W. The shortest pulse duration is 15 ns. The highest single pulse energy is 4. 84 μJ and the highest peak power is 330 W. The repetition rate varies between 220 kHz and 360 kHz and the highest average output power is 1. 16 W.
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