GaAs As a Passive Q-switch and Brewster Plate for Pulsed Yb:YAG Laser

Q Liu,HS Wu,ML Gong,P Yan,B Shi,DS Wang
DOI: https://doi.org/10.1016/s0030-4018(03)01541-4
IF: 2.4
2003-01-01
Optics Communications
Abstract:This study demonstrates a diode side-pumped Yb:YAG laser operated under free-run and passively GaAs Q-switched conditions. The maximal output energy was 10 mJ at a 25 Hz pulse repetition frequency (PRF) with a 1ms pump pulse duration when free-running condition. The GaAs wafer was used both as a passive Q-switch and a Brewster plate. Pumped by 175 mJ of 1 ms pulse duration at 941 nm, the laser outputted 13 pulses at 1.03 μm when under the Q-switched. The first pulse was 120 ns with a peak power of 83 W. Rate equations were calculated and the passive Q-switching theory was analyzed. The equations’ numerical solutions were in good agreement with the experimental results.
What problem does this paper attempt to address?