4-ps passively mode-locked Nd:Gd_0.5Y_0.5VO4 laser with a semiconductor saturable-absorber mirror

Jing-Liang He,Ya-Xian Fan,Juan Du,Yong-Gang Wang,Sheng Liu,Hui-Tian Wang,Lian-Han Zhang,Yin Hang
DOI: https://doi.org/10.1364/OL.29.002803
IF: 3.6
2004-01-01
Optics Letters
Abstract:We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%. (C) 2004 Optical Society of America.
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