Abstract:Simultaneous passive Q-Switching and mode locking at low pump power was observed in a Laser Diode (LD) pumped Nd3+:YVO4-Cr4+:YAG laser, detailed studies were experimentally carried out. A fiber-coupled LD with maximum output power of 2 W is used as pump source. In a 50cm long cavity, the repetition rate of obtained mode-locking pulse train is about 300MHz, and the pulse duration was estimated to be at sub-nanosecond level. The repetition rate of the passive Q-Switched pulse train varies from 10kHz similar to 130kHz with the increasing of the pump power. It was found that the threshold of incident pump power to generate mode-lock in such a laser is dependent on the position of Cr4+:YAG crystal inside the cavity. Select proper Cr4+:YAG as saturable absorber and optimize its position, simultaneous Q-Switching and mode-locking occurred in the Nd3+:YVO4 laser at pump power as low as about 200 mW. The experimental result demonstrates the possibility of obtains ultra short optical pulse in a simple and low cost way, which is of great interest in some applications.

Comparison Between Two Kinds of Semiconductor Absorbers for Mode-Locking in Nd : Yvo4 Laser

Passively Mode-Locking Nd:Gd_05Y_05VO_4 Laser with an In_025Ga_075As Absorber Grown at Low Temperature

Passively Mode-Locking Nd : Gd0.5y0.5vo4 Laser With An In(0.25)Ga(0.75)Aa Absorber Grown At Low Temperature

High Efficiency Passively Q-switched Mode-Locking Nd:GdVO4 Laser with LT-In0.25Ga0.75As Saturable Absorber

Passively Mode-Locked Nd:YVO4 Laser Using Semiconductor Saturable Absorption Mirrors of Interface States Relaxation Region

2-Ps Passively Mode-Locked Nd : Yvo4 Laser Using an Output-Coupling-Type Semiconductor Saturable Absorber Mirror

Contrastive Study on Two Kinds of Semiconductor Saturable Absorber Mirrors for Side-Pumped Passively Mode-Locked Nd:YAG Lasers

Diode-End-Pumped Passively Cw Mode-Locked Nd : Ylf Laser by the Lt-In0.25ga0.75as Absorber

Passively Mode-Locked Nd:Gd 0.1 Y 0.9 VO 4 Laser with a Semiconductor Saturable Absorber Mirror

Passively Mode Locked Diode-End-Pumped Nd∶YAG Laser with In0.25 Ga0.75 As As Output Coupler

Passively mode-locked Nd:Gd0.1Y0.9VO4 laser with a semiconductor saturable absorber mirror

Contrastive study of two SESAMs for passive mode-locking in Nd:YVO_4 laser with low pump power

Passive Q-switching of laser diode-pumped Nd:YVO4 laser with GaAs

Diode-pumped Passively Mode-Locked Nd:YVO4 Laser at 1342 Nm with Periodically Poled LiNbO3.

Modal Gain Characteristics of a 2 Μm InGaSb/AlGaAsSb Passively Mode-Locked Quantum Well Laser

Passive Mode-Locking of a Nd:YAG Ceramic Laser by Optical Interference Modulation in a GaAs Wafer.

Study On Simultaneous Passive Q-Switching And Mode-Locking At Low Pump Power In A Ld-Pumped Nd3+: Yvo4-Cr4+: Yag Laser

Investigation Of Regime Switching From Mode Locking To Q-Switching In A 2 Mu M Ingasb/Gaassb Quantum Well Laser

Investigation of Regime Switching from Mode Locking to Q-switching in a 2 Μm InGaSb/AlGaAsSb Quantum Well Laser

4-ps passively mode-locked Nd:Gd_0.5Y_0.5VO4 laser with a semiconductor saturable-absorber mirror

Diode-Pumped Self-Starting Mode-Locked Nd:YVO 4 Laser with Semiconductor Saturable Absorber Output Coupler