Abstract:We have performed a comparative structural and optical investigation of InGaN/GaN MQW LED wafers grown on (11 (2) over bar2) facet GaN/sapphire templates by Metalorganic Chemical Vapor Deposition. The effect of the growth time of epitaxial lateral overgrowth GaN with (11 (2) over bar2) facets on the structural and optical properties were investigated via photoluminescence (PL), PL excitation, time-resolved PL, Raman and SEM measurement on two typical InGaN MQW samples. From temperature dependence PL measurement, we can find that these two samples both exhibit two distinguish peaks attributed to quantum wells with wide range wavelength. Raman E2 (high) signals revealed a partially relaxation of compressive stress in the facet GaN template. Experimental observations have revealed: (a) a Stokes shift between the emission peak energy and absorption edge and (b) a red shift behavior of emission with decay time (equivalently, a rise in decay time with decreasing emission energy). The large Stokes shift can be attributed to the quantum confined Stark effect (QCSE). The lower-energy side of the InGaN main emission peak is governed mainly by carrier generation in the GaN barriers and subsequent carrier transfer to the InGaN wells. Different amounts of Stokes shift indicate the interface imperfection from longer growth time of epitaxial lateral overgrowth GaN with (11 (2) over bar2) facets. Temperature dependence of PL decay time tau(PT) shows an interesting behavior of tPL with temperature.

Effects of Surface Migration on InGaN/GaN Multiple Quantum Wells Selectively Grown on Periodic Stripe Openings Separated by Large SiO2 Covered Spacing on Si (111) Substrates

Selective Area Epitaxy of Semipolar InGaN/GaN Multiple Quantum Wells on GaN Microfacets Using Crossover Stripe Patterns

Enhancement of Optical Characteristic of InGaN/GaN Multiple Quantum-Well Structures by Self-Growing Air Voids

Photoluminescence of InGaN/AlGaN Strained Multiple Quantum Wells Influenced by Dry Etching

Investigation on Epitaxial Lateral Overgrowth of InGaN/GaN Multi-Quantum-Well Nanowires

Growth of AlGaN-based multiple quantum wells on SiC substrates

Morphological Dependent Indium Incorporation in InGaN/GaN Multiple Quantum Wells Structure Grown on 4° Misoriented Sapphire Substrate

Effects of indium surfactant on growth and characteristics of (112¯2) plane AlGaN-based multiple quantum wells

Epitaxy and Optical Properties of InGaN/GaN Multiple Quantum Wells on GaN Hexagonal Pyramids Template

Structural and Optical Properties of InGaN/GaN Multiple Quantum Well Light Emitting Diodes Grown on (1122) Facet GaN/sapphire Templates by Metalorganic Chemical Vapor Deposition

Influence of Substrate Misorientation on the Photoluminescence and Structural Properties of InGaAs/GaAsP Multiple Quantum Wells.

Morphology evolution and emission properties of InGaN/GaN multiple quantum wells grown on GaN microfacets using crossover stripe patterns by selective area epitaxy

Selective Epitaxy of Ingan/Gan Multiple Quantum Wells on Gan Side Facets

Strong potential profile fluctuations and effective localization process in InGaN∕GaN multiple quantum wells grown on {10‐1m} faceted surface GaN template

Dislocation Reduction and Stress Relaxation of GaN and InGaN Multiple Quantum Wells with Improved Performance Via Serpentine Channel Patterned Mask.

Structural and optical properties of 3D growth multilayer InGaN/GaN quantum dots by metalorganic chemical vapor deposition

Narrow Stripe Selective Growth of Oxide-Free InGaAlAs/InGaAlAs MQWs by Ultra-Low Pressure MOVPE

Improvements of Structural and Optical Properties of GaN/Al0.10Ga0.9N Multi-Quantum Wells by Isoelectronic In-doping

Growth Behaviors of GaN on Stripes of Patterned c-Plane GaN Substrate

Effect of InAs insertion layer on the structural and optical property improvement of InGaAs/InAlAs multiple quantum wells

Algainas Narrow Stripe Selective Growth on Substrates Patterned with Different Mask Designs