Abstract:The optical properties of GaN-based green light-emitting diodes (LED) are investigated by transmission electron microscopy (TEM) and temperature-dependent micro-photoluminescence (μ-TDPL) in this study. Compared with the emission of normal c-plane multiple quantum wells (C-MQWs), the emission of C-MQWs close to V-shaped pits (V-pits) exhibits a shoulder peak phenomenon at cryogenic temperature, and the shoulder peak gradually disappears as the temperature increases. At room temperature, the peak of C-MQWs close to V-pits (C2) exhibits a red-shift. The formation of V-pits would induce strain relaxation. Strain relaxation can result in Indium (In) incorporation and localization, and reduced quantum-confined stark effects (QCSE). In incorporation and localization can lead to the red-shift of C2, reduced QCSE can cause the blue-shift of C2. Therefore, the red-shift of C2 arises from further In incorporation and localization of C-MQWs. It is worth noting that In incorporation and localization is dominant in the formation of V-pits for green InGaN/GaN C-MQWs. Additionally, the carriers limited in sidewall MQWs (S-MQWs) of V-pits escape into C-MQWs close to V-pits can mitigate the common phenomenon in which the emission intensity of C-MQWs decreases as the temperature increases, which helps improve the emission intensity of GaN-based green LEDs.

Electroluminescence from the InGaN/GaN Superlattices Interlayer of Yellow LEDs with Large V-Pits Grown on Si (111)

Study on Carrier Transportation in InGaN Based Green LEDs with V-pits Structure in the Active Region

Performance Enhancement of Yellow InGaN-based Multiple-Quantum-well Light-Emitting Diodes Grown on Si Substrates by Optimizing the InGaN/GaN Superlattice Interlayer

Effect of Hole Blocking Layer on V-pit Hole Injection and Internal Quantum Efficiency in GaN-based Yellow LED

Effects of V-pits Covering Layer Position on the Optoelectronic Performance of InGaN Green LEDs

Hole Injection from the Sidewall of V-Shaped Pits into C-Plane Multiple Quantum Wells in Ingan Light Emitting Diodes

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

Efficient InGaN-based Yellow-Light-emitting Diodes

Effects of the P-Alingan/gan Superlattices' Structure on the Performance of Blue LEDs

Electroluminescence From The Sidewall Quantum Wells In The V-Shaped Pits Of Ingan Light Emitting Diodes

Different Origins of the Yellow Luminescence in As-Grown High-Resistance GaN and Unintentional-Doped GaN Films

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Aging Mechanism of GaN-based Yellow LEDs with V-pits

Cathodoluminescence Study of InGaN/GaN Quantum-Well LED Structures Grown on a Si Substrate

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Study of ultraviolet light emitting diodes with InGaN quantum dots and lattice matched superlattice electron blocking layers

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Time-resolved photoluminescence studies of InGaN/GaN multi-quantum-wells blue and green light-emitting diodes at room temperature

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Ultraviolet Electroluminescence from ZnS@ZnO Core-ShellNanowires/p-GaN Introduced by Exciton Localization